6inch 4H-SEMI Type SiC Substrate for AR Glasses
The 6-inch 4H-SEMI silicon carbide (4H-SiC) substrate is a
wide-bandgap semiconductor material based on the hexagonal crystal
structure (4H polytype), engineered for semi-insulating
properties (resistivity ≥1×10⁷ Ω·cm). Fabricated via physical
vapor transport (PVT) or liquid-phase epitaxy (LPE), it
delivers 3.26 eV wide bandgap, 3.5 MV/cm breakdown field,
4.9 W/cm·K thermal conductivity, and high-frequency low-loss
characteristics, making it ideal for extreme-environment
applications such as 5G communications, RF devices, and aerospace
electronics. Compared to silicon-based materials, it offers 10×
higher breakdown field strength and 3× superior thermal
conductivity, enabling stable operation across -200°C to 1,600°C,
and serving as an optimal substrate for high-voltage,
high-frequency, and high-power devices.
6 Inch 4H-SEMI SiC Substrate Key Features
1. Electrical Performance
Wide Bandgap (3.26 eV): 6 inch 4H-SEMI SiC substrate withstands
voltages exceeding 10 kV, suitable for high-voltage scenarios like
smart grids and EV inverters.
High Breakdown Field (3.5 MV/cm): 10× higher than silicon,
minimizing leakage current and enhancing reliability.
High Electron Mobility (900 cm²/V·s): 6 inch 4H-SEMI SiC
substrate optimizes switching speed in RF devices, reducing
conduction losses.
2. Thermal & Mechanical Properties
High Thermal Conductivity (4.9 W/cm·K): 3× better heat
dissipation than silicon, supporting extreme temperatures (-200°C
to 1,600°C).
High Hardness (Mohs 9.2): 6 inch 4H-SEMI SiC substrate resists
wear, compatible with precision processes like CMP and dry etching.
3. Process Compatibility
Low Micropipe Density (<1 cm⁻²): 6 inch 4H-SEMI SiC
substrate minimizes lattice defects for superior epitaxial layer
quality.
Surface Flatness (Ra <0.2 nm): 6 inch 4H-SEMI SiC substrate
ensures compatibility with lithography and thin-film deposition.
6 Inch 4H-SEMI SiC Substrate Core Applications
1. 5G Communications & RF Devices
- Millimeter-Wave RF Modules: 6 inch 4H-SEMI SiC substrate
enables GaN-on-4H-SiC RF devices for 28 GHz+ bands, improving
signal efficiency.
- Low-Loss Filters: 6 inch 4H-SEMI SiC substrate reduces signal
attenuation, enhancing radar and communication sensitivity.
2. Electric Vehicles (EVs)
- High-Frequency Inverters: Compatible with 800V fast-charging
platforms, reducing energy loss by >40%.
- Power MOSFETs: 6 inch 4H-SEMI SiC substrate cuts 80–90%
conduction losses, extending driving range.
3. Aerospace & Defense
- Radiation-Hardened Devices: Replaces silicon components,
prolonging satellite and rocket system lifespans (>100 Mrad
tolerance).
- High-Power Radars: 6 inch 4H-SEMI SiC substrate leverages
low-loss properties for enhanced detection precision.
4. Industrial & Energy Systems
- Solar Inverters: Boosts conversion efficiency by 1–3%, reducing
volume by 40–60% for harsh environments.
- Smart Grids: 6 inch 4H-SEMI SiC substrate supports high-voltage
DC transmission, minimizing heat dissipation and cooling needs.
6 Inch 4H-SEMI SiC Substrate Technical Parameter
| Crystal parameters |
| Type | 4H |
| Refractive index a | >2.6 @550nm |
| Absorptivity a | ≤0.5% @450-650nm |
MP transmittance a
(without anti-reflection conditions) | ≥66.5% |
| Haze a | ≤0.3% |
| Polymorphism a | None permitted |
| Microtube density | ≤0.5/cm² |
| Hexagonal void density | None permitted |
| Impurity Grain on Hexagonal a | None permitted |
| MP Inclusion a | None permitted |
| Mechanical parameters |
| Dia(inches) | 6 |
| Surface orientation | (0001)±0.3° |
| Notch reference edge | Notch |
| Notch orientation | <1-100>±2° |
| Notch angle | 90±5°/1° |
| Notch depth | 1 mm ±0.25 mm (-0 mm) |
| Surface treatment | C-Si side (CMP) |
| Wafer edge | Bevel |
| Surface roughness (AFM) | Ra≤0.2 nm
(5×5 µm scan area) |
| Thickness a (Tropel) | 500.0 µm ±25.0 µm |
| LTV (Tropel) | ≤2 µm |
| TTV a (Tropel) | ≤3 µm |
| Bow a (Tropel) | ≤5 µm |
| Warp a (Tropel) | <15 µm |
Recommend other type of SiC
