High-Purity Silicon Carbide (SiC) Powder 99.9999% (6N) HPSI Type
100μm Particle Size SIC Crystal Growth
Silicon carbide powder (SiC), as a core material for
third-generation semiconductors, exhibits high thermal conductivity
(490 W/m·K), extreme hardness (Mohs 9.5), and wide bandgap (3.2
eV). It is primarily used for SiC crystal growth, power device
substrate preparation, and high-temperature ceramic sintering. With
ultra-high purity synthesis (≥99.9999%) and precise particle size
control (50 nm–200 μm), it meets the requirements of PVT crystal
growth furnaces and CVD epitaxial equipment.
Features
· Purity: 6N-grade (99.9999%) metallic impurity control for
HPSI-type SiC powder；
· Crystal Form: Controllable 4H/6H polytypes in HPSI SiC powder；
· Particle Size: Adjustable 50 nm–200 μm (D50 distribution ±5%) for
high-purity semi-insulating SiC powder；
· Doping: Customizable N-type (nitrogen) or P-type (aluminum)
doping in HPSI-grade SiC powder；
Applications
· Crystal Growth: PVT method for 4/6-inch SiC single crystals
· Epitaxial Substrates: Preparation of SiC epitaxial wafers for
power devices
· Ceramic Sintering: High-temperature structural components
(bearings/nozzles)
ZMSH SIC powder display
ZMSH with expertise in SiC materials and a production facility
equipped with PVT crystal growth furnaces, we provide end-to-end
solutions from high-purity powders to crystal growth equipment. Our
powder purity and particle size consistency lead the industry.
Q&A
