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SPP04N60C3, SPB04N60C3 Final data SPA04N60C3 Cool MOSô Power Transistor VDS @ Tjmax 650 V RDS(on) 0.95 Ω ID 4.5 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche...
...Transistor Leg Cutting Machine MOS Components Pin Cutting Flat Leg RS-901AS Suitable: Machine is for cutting radial components lead, such as transistors, capacitor, LED, varistors, film capacitors, etc Can c...
...Silicon PNP transistor housed in a SOT-23 plastic package. It serves as a complementary pair to the S8050M and is designed for power amplifier applications. This transistor features a base (PIN 1), emitter (...
TIL111M, TIL117M, MOC8100M General Purpose 6-Pin Phototransistor Optocouplers Features • Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (typ.) • High forward transfer admittance: |Yfs| = 6.0 S (typ.) • Low l...
Original Transistor 2SK1305 Silicon N Channel MOS FET IC Components Original Transistor 2SK1305 Silicon N Channel MOS FET TO-3P Features • Low on-resistance • High speed switching • Low drive current • 4 V gate...
Plastic Darlington complementary power mosfet , Silicon Power Transistors 2N6038 Plastic Darlington complementary silicon power transistors are designed for general purpose amplifier and low−speed switching app...
2SC5200/FJL4315 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • High Current Capability: IC = 15A. • High Power Dissipation : 15...
2SC5200/FJL4315 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • High Current Capability: IC = 15A. • High Power Dissipation : 15...
CoolMOSTM Power Transistor Features PG-TO247 • New revolutionary high voltage technology • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge • Ultra low gate charge • Extreme dv /dt rat...
FQP10N20C/FQPF10N20C 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This ad...
RFG70N06, RFP70N06, RF1S70N06SM 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of...
BD244B, BD244C* (PNP) Complementary Silicon Plastic Power Transistors Features •Collector - Emitter Saturation Voltage - VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc •Collector Emitter Sustaining Voltage - VCEO(sus)...
MMBT3904 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • Epitaxial Planar Die Construction • Complementary PNP Type Available (MMBT3906) • Ideal for Medium Power Amplification and Switching • Lead Free/RoH...
...Transistors BJT Power BJT Trans GP BJT PNP 80V 10A 5000mW 3-Pin(2+Tab) TO-3 Tray Product Category: Bipolar Transistors - BJT RoHS: N Mounting Style: Through Hole Package / Case: TO-3 Product Type: BJTs - Bip...
BLF6G10LS-135RN RF MOSFET Transistors Trans MOSFET N-CH 65V 32A 3-Pin Manufacturer: Ampleon Product Category: RF MOSFET Transistors Transistor Polarity: N-Channel Technology: Si Id - Continuous Drain Current: 3...
... transistors 2N2222; 2N2222A FEATURES • High current (max. 800 mA) • Low voltage (max. 40 V). APPLICATIONS • Linear amplification and switching. DESCRIPTION NPN switching transistor in a TO-18 metal package....
2SC2987 NPN PNP Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type 2SA1227 ·High power dissipation APPLICATIONS ·For audio frequency power amplifier applications PINN...
...Fast switching • Logic level compatible ID = -0.3 A • Subminiature surface mount package RDS(ON) ≤ 2.5 Ω (VGS = -10 V) GENERAL DESCRIPTION PINNING SOT23 P-channel, enhancement mode, PIN DESCRIPTION logic lev...
...). . It can automatic feed transistor, detect back and front side. Forming tool can be customized for different forming needs, such as left-right windening leads, cutting leads to different ......
...Transistor The FCG93A and FCG93A/X are ultra-high frequency low-noise transistors manufactured by Guo Xin Jia Pin Semiconductor Co., Ltd. Utilizing a planar NPN silicon epitaxial bipolar process, these trans...