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Product Overview The HT13003 (AFO) is an NPN bipolar transistor from SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTD, designed for power switching applications. Encapsulated in a TO-126C plastic package, it off...
Product Overview The BFP720 is a wideband NPN RF heterojunction bipolar transistor (HBT) designed for high-frequency applications. It offers a high transition frequency (fT = 45 GHz) enabling low noise ......
Product Overview The BFP840FESD is a discrete RF heterojunction bipolar transistor (HBT) with integrated ESD protection, specifically designed for 5 GHz band applications. It offers a unique combination of high...
Product Overview The BFP405F is a low-profile, wideband silicon NPN RF bipolar transistor designed for high-frequency applications. It features a grounded emitter (SIEGET) structure, offering low noise characte...
Product Overview The 3DD5023P is a high breakdown voltage NPN bipolar transistor designed for low-frequency applications, specifically for the horizontal deflection output circuit in color televisions. Manufact...
Product Overview The BFP740ESD is a wideband NPN RF heterojunction bipolar transistor (HBT) featuring integrated ESD protection. It offers a unique combination of high-end RF performance and robustness, includi...
Product Overview The D13007MF is a high power NPN bipolar transistor designed for electronic ballasts and general power amplifier circuits. It features high frequency power conversion, high switching speed, ......
Product Overview The SS8550 is a PNP bipolar transistor designed for power amplification applications. It features a SOT-89 package and is suitable for various electronic circuits requiring PNP amplification.Pr...
Product Overview NPN epitaxial planar bipolar transistor designed for general purpose applications. Key features include high transition frequency and power dissipation capabilities.Product Attributes ......
Product Overview The MMBT3906T is a PNP bipolar transistor in a SOT-523 package, designed for medium power amplification and switching applications. It serves as a complementary device to the MMBT3904T, offerin...
Product Overview The MMBT5401 is a PNP bipolar transistor in a SOT-23 plastic-encapsulated package. It is complementary to the MMBT5551 and is ideal for medium power amplification and switching applications.Pro...
Product Overview The BC846, BC847, and BC848 are NPN bipolar transistors in a SOT-23 package, ideally suited for automatic insertion. They are designed for switching and AF amplifier applications.Product Attrib...
Product Overview The FMMT415/417 are NPN silicon planar bipolar transistors engineered for avalanche mode operation. Their design, featuring tight process control and low inductance packaging, enables the gener...
Product Overview The MMBTH10 is a high-frequency NPN bipolar transistor in a SOT-23 package, designed for general-purpose applications requiring fast switching characteristics.Product Attributes Brand: Not spec...
Product Overview The 2SC4901 is an ultra-high frequency (UHF) low-noise transistor designed using a planar NPN silicon epitaxial bipolar process. It offers high power gain, excellent low-noise characteristics, ...
Product Overview The BFS520 is an ultra-high frequency, low-noise NPN silicon epitaxial bipolar transistor. It offers high power gain and low noise characteristics, making it ideal for high-density surface moun...
Product Overview The TTA008B is a silicon PNP epitaxial bipolar transistor designed for power amplifier and power switching applications. It features high DC current gain, low collector-emitter saturation ......
Product Overview The TTC011B is a silicon NPN epitaxial bipolar transistor designed for power and audio-frequency amplification applications. It features a high collector voltage of 230V, low collector output c...
Product Overview The LDTD123YLT1G is a silicon NPN bipolar transistor featuring a monolithic bias resistor network, designed for surface mount applications. Its integrated bias resistors eliminate the need for ...
Product Overview The RN4903 is a silicon PNP/NPN epitaxial bipolar transistor featuring an integrated bias resistor. This design simplifies external circuitry, reducing system size and assembly time. It is suit...