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...Transistor Complementary to KTB817 for 60w High Power Amplifier Application CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 160 V Collector-Emitter Voltage VCEO 140 V Emitter-Base Voltage VEBO ...
...Transistor IXTH200N10T 200A 100V 5.4 Rds 550W Dc-Dc Converters Description Single MOSFET Die,N-Channel Enhancement Mode Avalanche Rated, Low Qg IXYS Gen1 Trench Gate Power MOSFETs are ideally suited for low ...
SOT-23 BIPOLAR TRANSISTORS TRANSISTOR (NPN) FEATURES For general AF applications High collector current High current gain Low collector-emitter saturation voltage MECHANICAL DATA Case: Molded plastic Epoxy: UL ...
... CODE (1) BC807 5D* BC807-16 5A* BC807-25 5B* BC807-40 5C* PNP general purpose transistor STOCK LIST EPM3128ATC100-10N 1950 ALTERA 15+...
Product Overview The MMBT1616A is an NPN transistor offered by SLKOR Micro. It is available in multiple model variations, including MMBT1616AL, MMBT1616AK, and MMBT1616AU. This transistor is designed for genera...
... charge Low reverse transfer capacitance Fast switching capability Avalanche energy specified General description of insulated gate bipolar transistor The 3N80 provide excellent RDS(ON)low gate charge and...
... amperes. It is commonly used in power supply circuits and other switching applications. Specification item value Model Number WSF28N06 Type Bipolar Transistor Place of Origin China Guangdong D/C...
...IGBT Transistors Technology: Si Package / Case: TO-247AB-3 Configuration: Single Collector- Emitter Voltage VCEO Max: 600 V Collector-Emitter ......
... MOS Transistor. Specification Of IXBX50N360HV Part Number IXBX50N360HV Voltage - Collector Emitter Breakdown (Max) 3600 V Current - Collector (Ic) (Max) 125 A ......
Linear Power Mosfet Transistor 2N5458 JFETs Led Televisions IC Chips JFETs General Purpose NChannel Depletion NChannel Junction Field Effect Transistors, depletion mode (Type A) designed for audio and sw...
... Collector current 15 A IB Base current 5 A PC PC Collector power dissipation TC≤25℃ 90 W Tj Junction temperature 150 ℃...
...Transistors D882M TRANSISTOR (NPN) FEATURE Power Dissipation MAXIMUM RATINGS (Ta =25 Š unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V...
...Transistors 3DD13005 TRANSISTOR (NPN) FEATURE Power Switching Applications MAXIMUM RATINGS (Ta =25 Š unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 700 V VCEO Collector-Emitt...
...Transistor S8050 SOT-23 Complimentary to S8550 Silicon Material S8050 TRANSISTOR (NPN) S8050 SOT-23 Datasheet.pdf FEATURES Complimentary to S8550 Collector Current: IC=0.5A MARKING: J3Y MAXIMUM RATINGS (TA=2...
Mosfet Power Transistor NVHL040N65S3F M Superfet3 650V TO247 PKG N-Channel Description SUPERFET III MOSFET is new high voltage superjunction (SJ) MOSFET family that is utilizing charge balance technology for o...
...Transistors 3DD13005 TRANSISTOR (NPN) FEATURE Power Switching Applications MAXIMUM RATINGS (Ta =25 Š unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 700 V VCEO Collector-Emitt...
Mosfet Power Transistor NVHL040N65S3F M Superfet3 650V TO247 PKG N-Channel Description SUPERFET III MOSFET is new high voltage superjunction (SJ) MOSFET family that is utilizing charge balance technology for o...
...Transistors 3DD13005 TRANSISTOR (NPN) FEATURE Power Switching Applications MAXIMUM RATINGS (Ta =25 Š unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 700 V VCEO Collector-Emitt...
...Transistors D882M TRANSISTOR (NPN) FEATURE Power Dissipation MAXIMUM RATINGS (Ta =25 Š unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V...
...Transistors 3DD13005 TRANSISTOR (NPN) FEATURE Power Switching Applications MAXIMUM RATINGS (Ta =25 Š unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 700 V VCEO Collector-Emitt...