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...channel installed step plate steel frame floor steel grille Product Description 1. Steel grille drain grating is the workhorse of the industrial flooring market and has served industry for decades. Strong an...
...channel installation step plate Product Description 1. Steel grille drain grating is the workhorse of the industrial flooring market and has served industry for decades. Strong and durable with an exceptiona...
...-protected Product Attributes Product Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1000 V Current - Continuous Drain (Id) @ 25°C 2.2A (Tc) Drive Voltage (Ma...
... velocity, depth, pressure temperature and conductivity of water flowing in rivers, streams, open channels and pipes. When used with a companion Lanry DOF6000 Calculator, flow rate and total flow can also be...
...Channel Single FETs Transistors Product Description Of NVBG080N120SC1 NVBG080N120SC1 include high efficiency, fast operation frequency, increased power density, reduced EMI, and reduced system size. Specific...
...Channel Transistors TO-247-4L Product Description Of NVH4L020N120SC1 NVH4L020N120SC1 device has optimum performance when driven with a 20V gate drive but also works well with an 18V gate drive. Specification...
...Channel 700V 131A 400W Through Hole TO-247-3 Product Description Of MSC015SMA070 The MSC015SMA070 silicon carbide (SiC) power MOSFET product line increases the performance over silicon MOSFET and silicon IGB...
...Channel MSC40SM120JCU3 Automotive IGBT Modules 1200V SiC MOSFET Power Module Product Description Of MSC40SM120JCU3 MSC40SM120JCU3 is a 1200 V, 55 A full Silicon Carbide Buck Chopper SiC MOSFET Power Module....
IRFD120PBF High-Performance N Channel MOSFET for Power Electronics Applications Parameters: - Drain-Source Voltage (VDS): 100V - Drain Current (ID): 10A - RDS(on): 0.0055Ω - Gate-Source Voltage (VGS): ±20V - Po...
Product Description: 1. N-channel MOSFET for high-power switching and linear operations 2. Maximum drain source voltage of 30V and a maximum current of 8A 3. Maximum Pulsed Drain Current of 30A 4. Low RDS(ON) o...
Product Listing: IRFH5304TRPBF MOSFET Features: • N-Channel Enhancement Mode • 100V Drain-Source Voltage • 4.2A Continuous Drain Current • Low RDS(on) • Low Gate Charge • Logic Level Gate • 100% Avalanche Teste...
Product Name: IRFS3206TRRPBF N-Channel MOSFET Package Type: TO-220AB Voltage - Drain Source Breakdown (Vds): 55V Voltage - Gate Threshold (Vgs): 10V Current - Continuous Drain (Id) @ 25C: 60A Rds On (Max) @ Id...
... High Performance N-Channel MOSFET for Power Electronics Applications Product Features: -60V Drain-Source Breakdown Voltage -Typical Output Capacitance: 790pF -Typical Gate Charge: 34nC -RDS(on) = 0.19 Ohm -...
... Product Description: The IRFP264PBF Power MOSFET is a high performance, high voltage N-Channel MOSFET with a maximum drain-source voltage of 500V. This MOSFET has a drain current of 24A and a maximum power ...
... of 1.3 mΩ, a maximum drain source voltage of 100V, and a maximum drain current of 29A. It also offers a high breakdown voltage of 500V and a maximum junction temperature of 175°C. In addition, it operates a...
...Channel MOSFET with an integrated protection diode, low on-resistance, low capacitance, and high frequency. Product Features: - Low On-Resistance: RDS(on) = 0.7 Ω (typ.) - High Frequency: fT = 2.5 GHz (typ.)...
... Energy Rated • ESD Rated • RoHS Compliant Specifications: • Drain to Source Voltage (VDS): 500V • Continuous Drain Current (ID): 20A • On Resistance (RDSon): 4.7mohm • Gate to Source Voltage (VGS): ±20V • P...
...channel Superior Efficiency Product Listing: TN5335N8-G MOSFET Power Electronics The TN5335N8-G is a MOSFET power electronics module that offers outstanding performance, reliability, and efficiency for a wid...
NTR3C21NZT1G SOT-23 MOSFET Power Electronics Power Single N-Channel 2.4 x 2.9 x 1.0 mm20 V 3.6 A Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20 V Current - Continuous Drain (Id) @ 25°C 3.6A (...
NVR4501NT1G SOT-23 Package MOSFET Power Electronics Power single N-Channel 20 V 3.2 A Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20 V Current - Continuous Drain (Id) @ 25C 3.2A (Ta) Drive V...