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... STMicroelectronics Series MDmesh™ II Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 44A (Tc) ...
... N - Channel Power Mosfet 200V 50A Through Hole Metal Oxide TO247-3 FEATURES Type : MOSFETS-Single Packaging :Tube Part state: ACTIVE FET type : N - Channel Technology : MOSFET (Metal Oxide) Drain-source vol...
...Channel 60V 10.8A Transistors FETS MOSFET N-CH 60V 10.8A 8SO T&R 2 Discrete Semiconductor DMT6009LSS-13 Specification : Part number DMT6009LSS-13 Category Discrete Semiconductor Products Transistors - FETs...
...PPAP Unknown Product Category Small Signal Configuration Single Dual Drain Process Technology SIPMOS Channel Mode Enhancement Channel Type P Number of Elements per Chip 1 Maximum Drain Source Voltage (V) 60 ...
... Unknown Product Category Small Signal Configuration Single Dual Drain Process Technology SIPMOS Channel Mode Enhancement Channel Type P Number of Elements per Chip 1 Maximum Drain Source Voltage (V) 100 Max...
...: RF JFET Transistors RoHS: Details Transistor Type: JFET Technology: Si Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: - 25 V Id - Continuous Drain Current: 5 mA Maximum Drain Gate Volt...
... STMicroelectronics Series MDmesh™ II Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 44A (Tc) ...
...Channel 40 V 195A (Tc) 294W (Tc) Through Hole TO-220AB Features: Category Single FETs, MOSFETs Mfr Infineon Technologies Product Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Sour...
... (Vdss) 800 V Current - Continuous Drain (Id) @ 25°C 4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.......
... MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650 V Current - Continuous Drain (Id) @ 25ツーC 31.2A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, ......
... SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss) 1200 V Current - Continuous Drain (Id) @ 25°C 26A (Tc) Drive Voltage (Max Rds On, Min Rds On) 15V, 18V Rds On (Max) @ Id, ......
... Oxide) Drain to Source Voltage (Vdss) 650 V Current - Continuous Drain (Id) @ 25ツーC 31.2A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, ......
ATP114-TL-H P-Channel 60 V 55A (Ta) 60W (Tc) Surface Mount ATPAK Features:ATP114-TL-H Category Single FETs, MOSFETs Mfr onsemi FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 6...
IRF7480MTRPBF N-Channel 40 V 217A (Tc) 96W (Tc) Surface Mount DirectFET Isometric ME Features: Category Single FETs, MOSFETs Mfr Infineon Technologies FET Type N-Channel Technology MOSFET (Metal Oxide) Drain t...
...Channel 100 V 42A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8 Datasheet:SQJ488EP-T2_GE3 Category Single FETs, MOSFETs Mfr Vishay Siliconix Series Automotive, AEC-Q101, TrenchFET® Product Status Active FET Typ...
...® Package Tape & Reel (TR) Cut Tape (CT) Digi-Reel® Product Status Not For New Designs FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55 V Current - Continuous Drain (Id) @...
...: RF JFET Transistors RoHS: Details Transistor Type: JFET Technology: Si Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: - 25 V Id - Continuous Drain Current: 5 mA Maximum Drain Gate Volt...
... Renesas Electronics America Packaging Tube Part Status Active FET Type N-Channel/P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 160V Current - Continuous Drain (Id) @ 25°C 7A (Ta) ...
Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 48A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max)...
Galvanized steel grille drain channel leak proof floor carbon steel foot pedals Trench cover Trench cover was made of cement, cast iron originally.But ......