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...Channel 10Mbps Product Description Of ADUM3201BRZ ADUM3201BRZ is dual-channel, digital isolator. Combining high speed CMOS and monolithic transformer technology, these isolation components provide outstandi...
...IPW50R199CPFKSA1 N-Channel 550 V 17A Single Transistors Product Description Of IPW50R199CPFKSA1 IPW50R199CPFKSA1 is N-Channel 550 V 17A (Tc) 139W (Tc) transistors through hole PG-TO247-3-1 package. Specifica...
...drivers capable of driving N-channel MOSFETs and IGBTs in a half-bridge configuration. High-voltage processing techniques enable the high side to switch to the offset voltage in a bootstrap operation. Specif...
...Channel ADC3683IRSBR Low Noise Ultra Low Power ADC 40WQFN Integrated Circuit Chip Product Description Of ADC3683IRSBR ADC3683IRSBR is 18-bit 0.5 to 65-MSPS Low Noise Ultra-low Power Dual Channel ADC, it sup...
... to the superjunction (SJ) principle pioneered. Specification Of IPDQ60R040S7A Part Number IPDQ60R040S7A Product Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage 600 V...
... is TO-263-8, D²Pak (7 Leads + Tab), TO-263C. Specification Of IPBE65R190CFD7A Part Number IPBE65R190CFD7A Technology MOSFET (Metal Oxide) Rds On (Max) @ Id, Vgs 190mOhm @ 6.4A, 10V Vgs(th) (Max) @ ......
... N-Channel 100V 260A 300W Surface Mount Transistors Product Description Of IAUT260N10S5N019 IAUT260N10S5N019 is N-Channel 100 V 260A (Tc) 300W (Tc) Surface Mount PG-HSOF-8-1 Single FETs, MOSFETs Transistors....
... Single FETs Transistors, 160 mohm, 1200V, M1, Package is TO-247-3L. Specification Of NTHL160N120SC1 Part Number NTHL160N120SC1 Input Capacitance (Ciss) (Max) @ Vds 665 pF @ 800 V Power Dissipation (Max) 119...
... charge balance technology for outstanding low on-resistance and lower gate charge performance. Specification Of NTP095N65S3HF Part Number NTP095N65S3HF FET Type N-Channel Technology MOSFET (Metal Oxide) Dra...
...8WDFN N-Channel Product Description Of NVTFS016N06CTAG NVTFS016N06CTAG is N-Channel Single FETs MOSFETs Transistors, 60V 8A (Ta), 32A (Tc) 2.5W (Ta), 36W (Tc), Surface Mount, package is 8-WDFN (3.3x3.3). Sp...
... is 8-LFPAK, Surface Mount. Specification Of NTMJS1D4N06CLTWG Part Number NTMJS1D4N06CLTWG Technology MOSFET (Metal Oxide) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ ......
...PQFN8(5mm x 6mm). Specification Of NTMFS011N15MC Part Number: NTMFS011N15MC Gate−To−Source Voltage: ±20V Source Current (Body Diode): 133A Forward Transconductance(VDS = 10 V, ID = ......
... voltage drives and turns off spikes on the gate. Specification Of NTBG015N065SC1 Part Number NTBG015N065SC1 Pd - Power Dissipation: 250 W Channel Mode: Enhancement Configuration: Single Fall Time: 9.6 ns Fo...
...2N-Channel Product Description Of DF23MR12W1M1PB11BPSA1 DF23MR12W1M1PB11BPSA1 is Booster 1200 V CoolSiC™ MOSFET Module, 2 N-Channel (Dual) Transistors, Silicon Carbide (SiC) Module. Specification Of DF23MR...
...-applied Thermal Interface Material. Specification Of FF6MR12KM1PHOSA1 Part Number FF6MR12KM1PHOSA1 Configuration 2 N-Channel (Half Bridge) Drain to Source Voltage (Vdss) 1200V (1.2kV) Current - Continuous ...
... Module. Specification Of F423MR12W1M1PB11BPSA1 Part Number F423MR12W1M1PB11BPSA1 Vgs(th) (Max) @ Id 5.5V @ 20mA Gate Charge (Qg) (Max) @ Vgs 124nC @ 15V Input ......
...Channel Product Description Of VN7016AJTR VN7016AJTR is a single channel high-side driver manufactured using VIPower® M0-7 technology and housed in PowerSSO-16 package. VN7016AJTR is designed to drive 12 V ...
... Of MSC035SMA070 Part Number: MSC035SMA070 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain To Source Voltage (Vdss): 700 V Current - Continuous Drain (Id) @ 25°C: 77A (......
...Channel Ceramic Membrane For High-Temperature Wastewater Treatment Product Features 1. Resistance to strong acid, alkali and oxidation 2. Resistance to organic solvents 3. Resistance to high temperature(up t...
...Channel Transistors MSC400SMA330 TO-247-4 Through Hole Product Description Of MSC400SMA330 MSC400SMA330 Silicon Carbide (SiC) MOSFETs offer superior dynamic and thermal performance over conventional Silicon ...