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... is TO-263-8, D²Pak (7 Leads + Tab), TO-263C. Specification Of IPBE65R190CFD7A Part Number IPBE65R190CFD7A Technology MOSFET (Metal Oxide) Rds On (Max) @ Id, Vgs 190mOhm @ 6.4A, 10V Vgs(th) (Max) @ ......
... N-Channel 100V 260A 300W Surface Mount Transistors Product Description Of IAUT260N10S5N019 IAUT260N10S5N019 is N-Channel 100 V 260A (Tc) 300W (Tc) Surface Mount PG-HSOF-8-1 Single FETs, MOSFETs Transistors....
... Single FETs Transistors, 160 mohm, 1200V, M1, Package is TO-247-3L. Specification Of NTHL160N120SC1 Part Number NTHL160N120SC1 Input Capacitance (Ciss) (Max) @ Vds 665 pF @ 800 V Power Dissipation (Max) 119...
... charge balance technology for outstanding low on-resistance and lower gate charge performance. Specification Of NTP095N65S3HF Part Number NTP095N65S3HF FET Type N-Channel Technology MOSFET (Metal Oxide) Dra...
...8WDFN N-Channel Product Description Of NVTFS016N06CTAG NVTFS016N06CTAG is N-Channel Single FETs MOSFETs Transistors, 60V 8A (Ta), 32A (Tc) 2.5W (Ta), 36W (Tc), Surface Mount, package is 8-WDFN (3.3x3.3). Sp...
... is 8-LFPAK, Surface Mount. Specification Of NTMJS1D4N06CLTWG Part Number NTMJS1D4N06CLTWG Technology MOSFET (Metal Oxide) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ ......
...PQFN8(5mm x 6mm). Specification Of NTMFS011N15MC Part Number: NTMFS011N15MC Gate−To−Source Voltage: ±20V Source Current (Body Diode): 133A Forward Transconductance(VDS = 10 V, ID = ......
... voltage drives and turns off spikes on the gate. Specification Of NTBG015N065SC1 Part Number NTBG015N065SC1 Pd - Power Dissipation: 250 W Channel Mode: Enhancement Configuration: Single Fall Time: 9.6 ns Fo...
...2N-Channel Product Description Of DF23MR12W1M1PB11BPSA1 DF23MR12W1M1PB11BPSA1 is Booster 1200 V CoolSiC™ MOSFET Module, 2 N-Channel (Dual) Transistors, Silicon Carbide (SiC) Module. Specification Of DF23MR...
...-applied Thermal Interface Material. Specification Of FF6MR12KM1PHOSA1 Part Number FF6MR12KM1PHOSA1 Configuration 2 N-Channel (Half Bridge) Drain to Source Voltage (Vdss) 1200V (1.2kV) Current - Continuous ...
... Module. Specification Of F423MR12W1M1PB11BPSA1 Part Number F423MR12W1M1PB11BPSA1 Vgs(th) (Max) @ Id 5.5V @ 20mA Gate Charge (Qg) (Max) @ Vgs 124nC @ 15V Input ......
...O_Module made in Lithuania Individual Channels Isolated Symphony Plus Product Details Manufacture/Brand ABB Model/Type DI04 Ordering information/Part Number DI04 Description DI module, 16-CH, 48 VDC. 48VDC, ...
...Channel Product Description Of VN7016AJTR VN7016AJTR is a single channel high-side driver manufactured using VIPower® M0-7 technology and housed in PowerSSO-16 package. VN7016AJTR is designed to drive 12 V ...
... Of MSC035SMA070 Part Number: MSC035SMA070 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain To Source Voltage (Vdss): 700 V Current - Continuous Drain (Id) @ 25°C: 77A (......
...Channel Ceramic Membrane For High-Temperature Wastewater Treatment Product Features 1. Resistance to strong acid, alkali and oxidation 2. Resistance to organic solvents 3. Resistance to high temperature(up t...
...Channel Transistors MSC400SMA330 TO-247-4 Through Hole Product Description Of MSC400SMA330 MSC400SMA330 Silicon Carbide (SiC) MOSFETs offer superior dynamic and thermal performance over conventional Silicon ...
... 173A N-Channel Product Description Of MSC130SM120JCU3 MSC130SM120JCU3 is Buck Chopper SiC MOSFET Power Module,1200 V, 173 A full Silicon Carbide power module. Specification Of MSC130SM120JCU3 Part Number M...
...Channel Common Source Silicon Carbide MSCSM70DUM07T3AG MOSFET Power Module 988W Product Description Of MSCSM70DUM07T3AG MSCSM70DUM07T3AG is 700V/353A dual common source silicon carbide (SiC) MOSFET power m...
... 2N-Channel SiC MOSFET Power Module 700V Product Description Of MSCSM70DUM017AG MSCSM70DUM017AG is a 700V/1021A 2 N-Channel (Dual) Common Source silicon carbide (SiC) MOSFET power module. Specification Of M...
...Channel Mosfet Array MSCSM170HM23CT3AG Full Bridge SiC MOSFET Power Module 602W Product Description Of MSCSM170HM23CT3AG MSCSM170HM23CT3AG is Full Bridge SiC MOSFET Power Module, 1700 V, 124 A silicon carb...