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... Power Electronics for Maximum Efficiency Features: • 100V Drain-Source Breakdown Voltage • -55V Gate-Source Voltage • 5.5A Continuous Drain Current • 190A Drain Source On-State Resistance • Fast Switching S...
...Electronics High Current High Voltage High Speed Devices Description: The IRFP4668PBF is a high performance N-channel Power MOSFET. This device is designed to be used as a switch in industrial, computing, an...
...Electronics Solution for Maximum Efficiency The IRFR13N20DTRPBF is a N-Channel Power MOSFET, rated at 13A, 20V and 0.019 ohm RDS(ON). It is designed for use in applications such as DC-DC converters, power su...
IRFH6200TRPBF MOSFET Power Electronics High Voltage High Current Low On Resistance The IRFH6200TRPBF from Infineon is a single N-channel HEXFET® power MOSFET in a TO-220AB package. It is a high-side MOSFET feat...
...2V •Rise Time: 6ns •Fall Time: 12ns •Capacitance: 2.6pF •Typical Gate Charge: 7.3nC •Package Type: TO-220 Why buy from us >>> Fast / Safely / Conveniently • SKL is a Stock keeper and trade company of Electro...
... Management, DC/AC Inverters, Switching Regulators. Why buy from us >>> Fast / Safely / Conveniently • SKL is a Stock keeper and trade company of Electronic components .Our...
IRLB3036PBF MOSFET Power Electronics High Quality Low-Voltage Switching Device Product Listing: IRLB3036PBF MOSFET Features: -Advanced Process Technology -Low On-Resistance -Low Gate Charge -Low Threshold Volta...
SIR468DP-T1-GE3 MOSFET Power Electronics High-Performance and Reliable Switching Solution Features: Low On-Resistance Fast Switching Speed Low Gate Charge Good Ruggedness Low Input Capacitance High ...
...Electronics High-Performance High-Efficiency Low-Voltage Switching Solution Product Description: The IPW60R070P6 is an N-channel MOSFET, designed for use in applications such as power management, motor contr...
IRLR8726TRPBF MOSFET High Efficiency Power Electronics for Maximum Performance Product Features: Advanced Process Technology Low On-Resistance Low Gate Charge Fast Switching 100% Avalanche Tested Le...
AOB480L MOSFET Power Electronics Product Features: -High power density; up to 480W in a small package -High efficiency; up to 95% -Low on-resistance; 0.0075 ohms -Low gate charge; 2.3 nC -Robust package; reinfo...
...charge and low gate-source capacitance. -Low on-resistance. -Pb-free packaging meets environmental standards of MIL-STD-19500 Applications: -DC/DC converters -DC/AC inverters -Motor control Parameters: -VDSS...
AO6601 30V N-Channel MOSFET Power Electronics Features: - 30V N-Channel MOSFET for improved power efficiency and high current switching - Low on-resistance for low power loss - Low gate charge for improved swit...
AO6401A, N-Channel MOSFET Power Electronics Product Features: N-Channel MOSFET High Density Cell Design Low On-Resistance RDS(ON) Low Gate Charge Qg Ease of Parallel Operation 100% Avalanche Tested ...
Product Description: AON6354 Dual N-Channel MOSFET Power Electronics Product Features: - Low On-Resistance: RDS(on) = 2.7 mΩ (Typ.) @ VGS = 4.5 V - Low Gate Charge: Qg(total) = 3.2 nC (Typ.) @ VGS = 4.5 V - Low...
AO6608 MOSFET Power Electronics Product Features: - P-channel enhancement mode MOSFET - Low RDS(on) - Fast switching - Low gate charge - Low gate resistance - Optimal for low voltage, high current applications ...
AO6402A MOSFET Power Electronics Features: Low RDS(on) High Efficiency Low Gate Charge Low Output Capacitance Low Leakage Current Available in SOT-223 and DPAK packages Specifications: Drain-Sourc...
AO4805 N-Channel MOSFET Power Electronics Features: - Low RDS(on) for high efficiency - Low gate charge for high switching performance - High current capability and low thermal resistance for high power handlin...
SQ2361AEES-T1_BE3 MOSFET Power Electronics High-Performance High-Reliability Solution Product Features: RDS(ON): 4.7 mOhm Drain-Source Voltage (Vdss): 33V Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 10V Curr...
... packages. This device is ideal for applications requiring fast switching, low on-resistance, and low gate charge. Parameters: • Drain-Source Voltage (VDS): 100V • Drain-Source On-Resistance (RDS(on)): < 0.0...