| Sign In | Join Free | My burrillandco.com |
|
...Electronics 4.4 Amps 20 Volts P−Channel TSOP−6 Drain to Source Voltage (Vdss) 20 V Current - Continuous Drain (Id) @ 25°C 2.2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 65...
..., 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 12 nC @ 4.5 V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 1000 pF @ ......
..., 10V Rds On (Max) @ Id, Vgs 1.35mOhm @ 36A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 273 nC @ 10 V Vgs (Max) ±20V Input Capacitance (Ciss)...
...Electronics TO-220-3 N-Channel 75V 15A Transistor FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150 V Current - Continuous Drain (Id) @ 25°C 130A (Tc) Drive Voltage (Max R...
...Electronics N-Channel POWERTRENCH 30V 8-PQFN Package FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 16A (Ta), 22A (Tc) Drive Vol...
... Rds On (Max) @ Id, Vgs 5.9mOhm @ 120A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 92 nC @ 10 V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 9445 ......
...Electronics TO-236-3 Package Low On-Resistance High Efficiency Fast Switching Speed FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain (Id) @ 25...
...Electronics N-Channel Enhancement Mode Transistor TO-236-3 Package FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain (Id) @ 25°C 320mA (Ta) Dri...
...Electronics Module Single P-Channel WDFN8 -100 V 120 m -13 A Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 15A (Ta), 46A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds...
...Electronics TO-236-3 N-Channel Enhancement Mode Transistor On Resistance Efficiency Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V Current - Continuous Dr...
...Electronics P-Channel -5.2 A -30 V Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 3.7A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On...
... Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 55 nC @ 10 V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3100 ......
..., 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 20 nC @ 4.5 V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ ......
...Electronics Transistor for High-Frequency Switching Applications Drain to Source Voltage (Vdss) 20 V Current - Continuous Drain (Id) @ 25°C 3.2A (Tj) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On ...
..., 10V Rds On (Max) @ Id, Vgs 7.2mOhm @ 28A, 10V Vgs(th) (Max) @ Id 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs 24 nC @ 6 V Vgs (Max) ±20V Input Capacitance (Ciss) (Max)...
... @ 10A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 18 nC @ 10 V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1255 ......
...Electronics 8-PowerTDFN N-Channel Enhancement Mode Resistance Fast Switching Capability FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40 V Current - Continuous Drain (Id) ...
...Electronics TO-252-3 N-Channel Enhancement Mode Transistor Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ 25°C 12.5A (T...
...Electronics Applications Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 13A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id...
...Electronics Transistor for High-Current Switching Applications Single N-Channel 25 V, 73 A Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25 V Current - Continuous Drain (Id) @ 25°C 11.2A (Ta...