Total 5462 products for common emitter transistor amplifier Manufacture & Suppliers

• Dual digital transistor ROHM EMG5T2R common emitter type optimized for inverter and interface drivers

  

  Product Overview The EMG5 / UMG5N is a common emitter dual digital transistor designed for inverter, interface, and driver applications. It integrates two DTC114Y chips within a single EMT or UMT package, signi...

  Hefei Purple Horn E-Commerce Co., Ltd.

  Anhui,China

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• LM741H Power Mosfet Tansistor Operational Amplifier multi emitter transistor

  

  LM741H Power Mosfet Tansistor Operational Amplifier General Description The LM741 series are general purpose operational amplifiers which feature improved performance over industry standards like the LM709. The...

  Anterwell Technology Ltd.

  Guangdong,China

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• MJ11033G Aviation Parts Darlington Emitter Transistors 5V

  

  ... general purpose amplifier applications. Features of Aviation Parts: • High DC Current Gain − hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (......

  XIXIAN FORWARD TECHNOLOGY LTD

  Shaanxi,China

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• OEM High Power Jfet Transistor , Npn Transistor Amplifier 650V

  

  ...Transistor , Npn Transistor Amplifier 650V Power Jfet Transistor Features High input impedance and low level drive Avalanche energy tested Improved dv/dt capability,high ruggedness Low gate charge Low Rdson(...

  Shenzhen Canyi Technology Co., Ltd.

  Guangdong

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• LM741H Power Mosfet Tansistor Operational Amplifier multi emitter transistor

  

  LM741H Power Mosfet Tansistor Operational Amplifier General Description The LM741 series are general purpose operational amplifiers which feature improved performance over industry standards like the LM709. The...

  ChongMing Group (HK) Int'l Co., Ltd

  China

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• Integrated Circuits IC E047 05 Mosfet Transistor TO247 IRFP064NPBF P3 LED Module Transistor Amplifier Parts Transistors

  

  Integrated Circuits IC E047 05 Mosfet Transistor TO247 IRFP064NPBF P3 LED Module Transistor Amplifier Parts Transistors [Who we are?] Shenzhen QINGFENGYUAN Technology Co., Ltd established in 2013, is a leading ...

  ShenZhen QingFengYuan Technology Co.,Ltd.

  China

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• Automotive IGBT Modules GD200CEX120C8SN 1200V 200A Common Emitter IGBT Module

  

  Automotive IGBT Modules GD200CEX120C8SN 1200V 200A Common Emitter IGBT Module [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + ...

  ShenZhen Mingjiada Electronics Co.,Ltd.

  China

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• Innotion 20W 6000MHz High Efficiency GaN HEMT RF Power Transistor Amplifier IC

  

  Innotion High Efficiency 20W Gallium Nitride 28V DC-6GHz 20W RF Power Transistor Product Description Innotion���s YP601820T is a 20-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) d...

  Zhongshi Zhihui Technology (suzhou) Co., Ltd.

  Jiangsu,China

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• DC To 8GHz 6W Rf Transistor Amplifier Gallium Nitride 28V Original New Condition

  

  ...

  VBE Technology Shenzhen Co., Ltd.

  Guangdong,China

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• 2sc2782 Transistor Amplifier NPN Transistor C2782 NPN RF VHF Amplifier Transistor Band Power

  

  2SC2782 N/A Electronic Components IC MCU Microcontroller Integrated Circuits 2SC2782 #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:...

  Shenzhen Kaigeng Technology Co., Ltd.

  Guangdong,China

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• 2SC4793 NPN PNP Transistors High Transition Frequency Through Hole 100 MHz

  

  ...Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·Complement to type 2SA1837 ·High transition frequency APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applicati...

  DELI ELECTRONICS TECHNOLOGY CO.,LTD

  Guangdong,China

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• 2SC5171 Audio Power Amplifier IC Transistor Silicon NPN Epitaxial Type 200 MHz

  

  ...°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 180 V, IE = 0 ― ― 5.0 μA Emitter cut-off current IEBO VEB = 5 V, IC = 0 ― ― 5.0 μA Collector-emitter breakdown...

  Shenzhen ATFU Electronics Technology ltd

  Guangdong,China

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• a1941 c5198 Transistor a1941 c5198 Transistor c5198 Amplifier 2SC5198 PNP Transistor 2SA1941 2SC5198 10A 100W TO-3P Original New

  

  ...- Base Voltage VEBO: - 5 V Collector-Emitter Saturation Voltage: 2 V Gain Bandwidth Product fT: 30 MHz Maximum Operating Temperature: + 150 C Continuous Collector Current: ......

  Shenzhen Quanyuantong Electronics Co., Ltd.

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• ULN2803A Darlington Transistor Array with 500 mA Output Current 50 V Output Voltage and Octal Configuration

  

  ...Transistors Eight NPN Array Features Eight Darlington transistors with common emitters Output current to 500 mA Output voltage to 50 V Integral suppression diodes Versions for all popular logic families Outp...

  Shenzhen Filetti Technology Co., LTD

  China

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• RF Power Transistors MHW5182 - Motorola, Inc - 450 MHz CATV Amplifier

  

  Quick Detail: MHW5182 - Motorola, Inc - 450 MHz CATV Amplifier Description: . . . designed specifically for 450 MHz CATV applications. Features ion���im -planted arsenic emitter transistors with 7.0 GHz fT and an...

  Mega Source Elec.Limited

  China

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• S8550 SOT-89 0.5A SMD Transistor PNP Silicon Epitaxial Planar Transistor

  

  ...Transistor S8550 SOT-89 0.5A SMD Transistor PNP Silicon Epitaxial Planar Transistor S8550 SOT-89 Datasheet.pdf FEATURES For switching and amplifier applications. Especially suitable for AF-driver stages and ...

  Guangdong Huixin Electronics Technology Co., Ltd.

  Guangdong,China

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• MMBTA56 NPN Darlington Power Transistor , Fast Switching Transistor NPN

  

  ...Transistors MMBTA56 TRANSISTOR (NPN) FEATURE l General Purpose Amplifier Applications Marking :2GM MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -80 ...

  Shenzhen Hua Xuan Yang Electronics Co.,Ltd

  Guangdong,China

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• 2SA1943 / 2SC5200 Integrated Circuit IC High Power Audio Amplifier

  

  ... output stage applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25°C) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -230 V VCEO C...

  Shenzhen Winsun Technology Co., Ltd.

  Guangdong,China

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• 600V 60A 378W Solar Inverter IGBT Power Transistor FGH60N60SFDTU

  

  ...IGBT Transistors Technology: Si Package / Case: TO-247AB-3 Configuration: Single Collector- Emitter Voltage VCEO Max: 600 V Collector-Emitter Saturation Voltage: 2.3 V Maximum Gate Emitter Voltage: - 20 V, +...

  Shenzhen Retechip Electronics Co., Ltd

  Guangdong,China

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• JAN2N2222A Bipolar Transistors - BJT 50 V Small-Signal BJT RF Transistors

  

  ...Transistors - BJT 50 V Small-Signal BJT Manufacturer: Microchip Product Category: Bipolar Transistors - BJT RoHS: N Technology: Si Mounting Style: Through Hole Package / Case: TO-18-3 Transistor Polarity: NP...

  Wisdtech Technology Co.,Limited

  Guangdong,China

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