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... Specifications Parameter Symbol Test conditions Min Typ Max Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 45 V...
... series are PNP general purpose amplifier and switching transistors, ideally suited for automatic insertion. They feature an epitaxial planar die construction and are designed for general purpose amplifier a...
Product Description The CZT5551 is an NPN Plastic-Encapsulated Transistor designed for applications in telephone switching circuits and as an amplifier. It features a high collector-emitter voltage of BVCEO=160...
...Transistor designed as a complementary device to the 2SC1815. It offers excellent HFE linearity, high voltage and current capabilities, and low noise performance. With a Collector-Emitter voltage (BVCEO) of ...
..., a DC Current Gain (hFE) of 20-70 at IC = 4A, and a Collector-Emitter Saturation Voltage (VCE(sat)) of 1.1V (Max) at IC = 4A. It is a complement to the 2N2955 type.Product Attributes Brand: JSMICRO ......
Product Overview The MJD127T4G is a Silicon PNP Darlington Power Transistor designed for general purpose amplifier and low speed switching applications. It features a low collector-emitter saturation voltage, h...
Product Overview The 2SD2226K is a general-purpose NPN transistor designed for low-frequency amplifier applications. It features high DC current gain, high emitter-base voltage, and low saturation voltage, maki...
... Overview This NPN transistor, housed in an SOT-23 package, is designed for switching and AF amplifier applications. It offers reliable performance with key parameters such as Collector Base Voltage (VCBO) a...
...-emitter saturation voltage, making them suitable for medium power general purposes and driver stages of audio amplifiers. Complementary types include BCX54, BCX55, and BCX56. Product Attributes Packaging: S...
... Unit Conditions Min. Max. TIP120/TIP121/TIP122 Collector-Base Voltage (VCBO) V 60/80/100 Collector-Emitter Voltage (VCEO) V...
Product Overview The MJD127D is a Silicon PNP Darlington Power Transistor designed for general purpose amplifier and low speed switching applications. It features a low collector-emitter saturation voltage, hig...
...Transistor designed for general-purpose applications. It serves as a complementary pair with the UTC 2SB649/A in low-frequency power amplifier circuits.Product Attributes Brand: UNISONIC TECHNOLOGIES CO., LT...
... Transistor (NPN) designed for various electronic applications. It offers a very low VCE(sat) of less than 0.4 V (Typ.) at an IC/IB ratio of 500mA / 50mA. This transistor complements the 2SB1197 and is suita...
...Transistors 2N3906 TRANSISTOR (NPN). FEATURE Ÿ PNP silicon epitaxial planar transistor for switching and Amplifier applications Ÿ As complementary type, the NPN transistor 2N3904 is Recommended Ÿ This trans...
...Transistors 2N3906 TRANSISTOR (NPN). FEATURE Ÿ PNP silicon epitaxial planar transistor for switching and Amplifier applications Ÿ As complementary type, the NPN transistor 2N3904 is Recommended Ÿ This trans...
...common dual digital transistors designed for inverter, interface, and driver applications. These devices offer the advantage of reduced mounting cost and area by integrating two DTC143T chips within a single...
... Silicon NPN Power Transistors high power mosfet transistors Features ■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applications ■ General purpose ■ Audio Amplifier Descrip...
Product Overview The ULN2803 is a high-voltage, high-current Darlington transistor array featuring eight open-collector common-emitter pairs, each capable of handling 500 mA. Designed for driving a wide range o...
Product Overview The ULN2803 is a high-voltage, high-current Darlington transistor array featuring eight open-collector common-emitter pairs, each rated at 500mA. Designed for driving a wide range of inductive ...
Product Overview The ULN2003 is a high-voltage, high-current Darlington transistor array featuring seven open-collector common-emitter pairs, each rated at 500mA. It includes output clamp diodes for inductive l...