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SOT-89-3L Plastic-Encapsulate Transistors B772 TRANSISTOR (NPN) FEATURE Low Speed switching Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base V...
...Plastic-Encapsulate Transistors D882M TRANSISTOR (NPN) FEATURE Power Dissipation MAXIMUM RATINGS (Ta =25 Š unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-...
...-Encapsulate Transistors 3DD13005 TRANSISTOR (NPN) FEATURE Power Switching Applications MAXIMUM RATINGS (Ta =25 Š unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 700 V VCEO Co...
...-Encapsulate Transistors B772 TRANSISTOR (NPN) FEATURE Low speed switching Marking :B772 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Col...
...Transistors A44 TRANSISTOR (NPN) FEATURE Low Collector-Emitter Saturation Voltage High Breakdown Voltage Marking :A44 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collecto...
...Transistors 2SD2499 DESCRIPTION ·With TO-3P(H)IS package ·High voltage;high speed ·Low saturation voltage ·Bult-in damper diode APPLICATIONS ·Horizontal deflection output for color TV Absolute maximum rating...
...-Encapsulate Transistors 3DD13005 TRANSISTOR (NPN) FEATURE Power Switching Applications MAXIMUM RATINGS (Ta =25 Š unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 700 V VCEO Co...
...-Encapsulate Transistors 3DD13005 TRANSISTOR (NPN) FEATURE Power Switching Applications MAXIMUM RATINGS (Ta =25 Š unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 700 V VCEO Co...
SOT-89-3L Plastic-Encapsulate Transistors B772 TRANSISTOR (NPN) FEATURE Low Speed switching Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base V...
...Plastic-Encapsulate Transistors D882M TRANSISTOR (NPN) FEATURE Power Dissipation MAXIMUM RATINGS (Ta =25 Š unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-...
...-Encapsulate Transistors 3DD13005 TRANSISTOR (NPN) FEATURE Power Switching Applications MAXIMUM RATINGS (Ta =25 Š unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 700 V VCEO Co...
...-Encapsulate Transistors B772 TRANSISTOR (NPN) FEATURE Low speed switching Marking :B772 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Col...
...Transistors A44 TRANSISTOR (NPN) FEATURE Low Collector-Emitter Saturation Voltage High Breakdown Voltage Marking :A44 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collecto...
...- Emitter Voltage VCEO Max: - 40 V Collector- Base Voltage VCBO: - 40 V Emitter- Base Voltage VEBO: - 5 V Collector-Emitter Saturation Voltage: - 0.4 V Maximum DC Collector Current: 0.2 A Gain Bandwidth Prod...
...transistor (BJT) encapsulated in a SOT-23 plastic package. It is designed for general-purpose applications and is complementary to the S9015 transistor.Product Attributes Marking: J6Technical Specifications ...
...Transistor designed for high-speed switching applications. It offers a collector current capability of 2A and a collector-emitter voltage of 32V. This transistor complements the 2SB1188 and is available in v...
... such as DC current gain, collector-emitter saturation voltage, and base-emitter on voltage. They are suitable for use in switching circuits and signal amplification, providing essential functionality for el...
... package. Product Attributes Brand: SLKORMICRO Model: 13001S Package: TO-92 Plastic-Encapsulate Transistors Technical Specifications Parameter Symbol Test Conditions Min Typ Max Unit Collector-Base Voltage V...
ROHM Dual Digital Transistor Emitters: EMG8 / UMG8N Product Overview The ROHM EMG8 and UMG8N are dual digital transistor emitters housed in compact SOT-553 (EMT5) and SOT-353 (UMT5) packages, respectively. Thes...
...Transistor designed to simplify circuit design and reduce part count and manufacturing processes through its built-in bias resistors. It features integrated resistors for input (R2) and collector (R1), with ...