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MMBT3904 NPN General Purpose Switching Transistor The MMBT3904 is an NPN epitaxial silicon planar transistor designed for general-purpose switching applications. It offers a collector-emitter voltage of 40V and...
...transistor featuring high DC current gain. It is complementary to the MMBT624 and MMBT596 transistors, offering reliable performance for various electronic applications.Product Attributes Brand: Goodarksemi ...
...transistor designed for general AF applications. It features high collector current, high current gain, and low collector-emitter saturation voltage. Its complementary type is the BC807 (PNP).Product Attribu...
...transistor constructed with an epitaxial planar die. It is ideal for low power amplification and switching applications.Product Attributes Brand: XT ELECTRONICS Model: MMDT3906 Type: DUAL TRANSISTOR (PNP+PNP...
...transistor designed for medium power amplification and switching applications. It is complementary to the MMBT5401.Product Attributes Brand: XT ELECTRONICS Product Type: TRANSISTOR (NPN) Package: SOT-23 Mark...
...transistor in a SOT-23 package. It is designed for general-purpose applications requiring specific voltage, current, and gain characteristics.Product Attributes Package Type: SOT-23 Transistor Type: PNPTechn...
Product Overview High Voltage Transistor, NPN Plastic-Encapsulate Transistors in SOT-23 package. Features include a high Collector-Emitter Voltage of 350V and a maximum Collector Dissipation of 250mW. Suitable ...
Product Overview The BC817 is an NPN transistor designed for general AF applications. It features a low collector-emitter saturation voltage and has a complementary PNP type, the BC807. This transistor is suita...
...epitaxial silicon planar design general-purpose switching transistor. It features a collector-emitter voltage of -50V and a collector current of -0.15A. Designed for various switching applications, this tran...
...Transistor The MMBT8050D is an NPN transistor designed for general-purpose applications. Its robust construction and reliable performance make it suitable for various electronic circuits. Product Attributes ...
...: Y2Technical Specifications Parameter Symbol Test conditions Min Max Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -5 V...
... Symbol Test conditions Min Typ Max Unit Collector-Base Voltage VCBO IC = -100uA, IE = 0 -40 V Collector-Emitter Voltage VCEO IC = -1 mA, IB = 0 -40 V Emitter-Base Voltage VEBO IE = -100uA,...
...transistor designed for low-speed switching applications. It offers reliable performance with key electrical characteristics and maximum ratings suitable for various electronic circuits.Product Attributes Br...
...Transistor designed for high voltage and general purpose applications. It offers a high collector-emitter sustaining voltage of -300V, a minimum DC current gain of 100 at -50mA, and a low collector saturatio...
...Transistor designed for general-purpose applications. It features epitaxial planar die construction, a complementary counterpart to the BC817, high collector current capability, high current gain, and a low ...
...Transistor The MMBT5401 is a PNP transistor designed for medium power amplification and switching applications. It is complementary to the MMBT5551.Product Attributes Brand: KTP Semiconductor Package Type: S...
...transistor in a SOT23 plastic package, offering low collector-emitter saturation voltage and high current capability. It provides improved device reliability due to reduced heat generation and serves as a re...
...Transistors from LESHAN RADIO COMPANY, LTD., designed for general-purpose applications. These transistors are offered in the SOT-23 (TO-236AB) package and comply with RoHS requirements.Product Attributes Bra...
... PNP Silicon general-purpose transistors designed for switching and amplification applications. They offer a collector current capability of up to -500 mA and a collector-emitter voltage of -45 V. These tran...
... PNP Silicon general purpose transistors designed for switching and amplification applications. They offer a collector current capability of -500 mA and a collector-emitter voltage of -45 V. These transistor...