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Product Overview The MMBT3904X is an NPN switching transistor featuring epitaxial planar die construction. It offers a collector current capability of 200mA and a collector-emitter voltage of 40V. A complementa...
... and offers capabilities such as 0.625 Watts of power dissipation at 25C, a collector current of 1.5A, and a collector-base voltage of 40V. The device operates within a junction temperature range of -55C to ...
...package. It is a complementary part to the S8050, designed for general-purpose applications with a continuous collector current of -0.5A and a collector power dissipation of 0.3W. The device operates within ...
Product Overview The MJE3055T is a transistor designed for audio power amplification. It is manufactured by Shenzhen Minos. Product Attributes Brand: MNS Model: MJE3055T Package Type: TO-220 Technical Specifica...
... Overview The MMBT5551 is an NPN Plastic Encapsulated Transistor in a SOT-23 package. It offers a collector current of 0.6A and a collector-base voltage of 180V, with operating and storage temperatures rangi...
...space-saving, it offers low collector capacitance, low collector-emitter saturation voltage, and closely matched current gain. This configuration minimizes component count and board space while preventing mu...
... in a compact SOT23 surface-mounted device (SMD) plastic package, this transistor offers a collector current capability of up to 200 mA and a collector-emitter voltage of 40 V. It is AEC-Q101 qualified, maki...
... transistor pair offers low collector capacitance and low collector-emitter saturation voltage. Its closely matched current gain, coupled with the absence of mutual interference between transistors, allows f...
.... Encased in a compact SOT23 plastic package, this transistor offers a low collector-emitter saturation voltage (VCEsat), high collector current capability (IC and ICM), and high efficiency, leading to reduc...
... plastic package, this device offers low collector capacitance and low collector-emitter saturation voltage. Its closely matched current gain and lack of mutual interference between transistors contribute to...
... plastic package, designed for applications requiring ultra-low collector-emitter saturation voltage (VCEsat) and equivalent on-resistance (RCEsat). It offers high collector current capability, leading to hi...
... voltage of 40V and a continuous collector current of 600mA. This lead-free component complies with EU RoHS 2.0 and features a green molding compound. It is supplied in a SOT-23 package. ......
...MMBT2222A is an NPN epitaxial silicon planar design general purpose switching transistor. It features a collector-emitter voltage of 40V and a continuous collector current of 600mA. This lead-free component ...
... design transistor designed for general-purpose switching applications. It features a collector-emitter voltage of -40V and a continuous collector current of -600mA. Its complementary NPN device is the MMBT4...
...an NPN epitaxial silicon, planar design general purpose switching transistor. It offers a collector-emitter voltage of 40V and a collector current of 200mA. Key features include a transition frequency of ove...
...a continuous collector current of 200mA. This lead-free component complies with EU RoHS 2.0 and uses a green molding compound, making it an environmentally conscious choice.......
... voltage of -40V and a continuous collector current of -200mA. This transistor is lead-free, compliant with EU RoHS 2.0, and uses a green molding compound. It is available in a SOT-23 package.......
... is a general-purpose PNP silicon transistor designed for switching applications. It features a collector-emitter voltage of -40V and a collector current of -0.2A, making it suitable for various electronic c...
... general-purpose switching transistor designed for various electronic applications. It offers a collector-emitter voltage of 40V and a collector current of 0.2A, making it suitable for switching operations. ...
... is an NPN silicon general-purpose switching transistor designed for various applications. It offers a collector-emitter voltage (VCE) of 40V and a collector current (IC) of 0.2A. This transistor is housed i...