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... power transistor designed for driver applications in DC/DC converters and actuators. It features a high collector-emitter sustaining voltage of 60V (Min), high DC current gain (hFE=100 Min @ VCE=2V, IC=3A),...
Product Overview The INCHANGE Semiconductor BU406 is a silicon NPN power transistor designed for high-voltage applications. It features a high collector-emitter voltage (VCEV= 400V Min), fast switching speed (t...
...use as output devices in complementary general-purpose amplifier applications. It offers a Collector-Emitter Breakdown Voltage of -60V and a minimum DC Current Gain (hFE) of 750 @ IC= -1.5 A. This transistor...
...amplifier applications. It offers excellent Safe Operating Area, a DC Current Gain (hFE) of 20-70 @ IC = 4A, and a Collector-Emitter Saturation Voltage (VCE(sat)) of 1.1 V(Max) @ IC = 4A. It is a complement ...
SS8050 TRANSISTOR (NPN) The SS8050 is an NPN transistor, complementary to the SS8550. It is designed for general-purpose applications. Product Attributes Marking: Y1 Package: SOT-23 Manufacturer: SHENZHEN JTD E...
Product Overview The MMBTA42 is a PNP transistor designed for high voltage applications. It offers high stability and reliability, with a maximum power dissipation of 350mW. It is complementary to the MMBTA92.P...
Product Overview The S9014 is an NPN bipolar junction transistor (BJT) encapsulated in a SOT-23 plastic package. It is designed for general-purpose applications and is complementary to the S9015 transistor.Prod...
... output stages. It serves as a complementary component to the TTA1943 and features a high collector voltage of 230V (min). Note: Continuous operation under heavy loads, such as high temperature, current, or ...
Product Overview This NPN transistor is designed for general AF applications, featuring a high collector current capability and housed in a compact SOT-23 package. It offers flexibility with any mounting positi...
... gain (hFE) of 60 at 10V VCE and 4mA IC. Its low collector-emitter saturation voltage (VCE(sat)) of 0.5V and transition frequency (fT) of 650MHz make it suitable for various electronic circuits.......
...soft switching applications, featuring high-speed switching and soft current turn-off waveforms.Product Attributes Brand: JIAEN Origin: www.jiaensemi.comTechnical Specifications Parameter Value Units Conditi...
Product Overview The CGWT80N65F2KAD is a high-performance IGBT utilizing JSCJ's second-generation Trench and Field Stop (FS) structure technology. It offers high application frequency, low Collector-Emitter Sat...
... Min Typ Max Unit CollectorBase Voltage VCBO 40 V CollectorEmitter Voltage VCEO 25 V EmitterBase Voltage VEBO 5 V Collector Current...
MMBTA42 NPN Transistor The MMBTA42 is an NPN transistor designed for high breakdown voltage and low collector-emitter saturation voltage. It serves as a complementary part to the MMBTA92. This transistor is sui...
Product Overview The S9013 is an NPN Silicon Epitaxial Planar Transistor designed for applications requiring high collector current. It offers excellent HFE linearity and is complementary to the S9012 transisto...
...Overview The LBSS5240LT1G is a PNP silicon transistor in a SOT23 plastic package, offering low collector-emitter saturation voltage and high current capability. It provides improved device reliability due to...
Product Overview LESHAN RADIO COMPANY, LTD. offers NPN Silicon General Purpose Transistors in a SOT-23 package. These transistors are designed for various electronic applications requiring reliable switching an...
...VCE(sat)), high current capability, and improved reliability due to reduced heat generation. This transistor is suitable as a replacement for standard SOT89/SOT223 packaged transistors and is available in a ...
..., fast switching speeds, and large current capacity with a wide Area of Safe Operation (ASO). The S- prefix denotes automotive and other applications with unique site and control change requirements, with .....
Product Overview The SL45H11 is a Silicon PNP Power Transistor designed for general-purpose power amplification and switching. It features a low Collector-Emitter Saturation Voltage (VCE(sat) = 1.0V Max at IC =...