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Driving A Mosfet

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Total 1917 products for driving a mosfet Manufacture & Suppliers

BUK7M42-60EX MOSFET N-CH 60V 20A LFPAK33

...MOSFETs - Single Mfr Nexperia USA Inc. Series Automotive, AEC-Q101, TrenchMOS™ Package Tape & Reel (TR) Cut Tape (CT) Digi-Reel® Product Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain...

J&T ELECTRONICS LTD
Hongkong,China

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PSMN1R0-30YLC,115 MOSFET N-CH 30V 100A LFPAK56

... Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 1.15mOhm @ 25A, 1...

J&T ELECTRONICS LTD
Hongkong,China

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IRFB7434PBF N Channel Mosfet Ic 40 V 195A Tc 294W Tc Through Hole TO-220AB

... Features: Category Single FETs, MOSFETs Mfr Infineon Technologies Product Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40 V Current - Continuous Drain (Id)...

Shenzhen Zhaocun Electronics Co., Ltd.
China

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FCD1300N80Z Fet N Channel Mosfet Circuit 800V 4A Tc 52W Tc Surface Mount TO-252AA

... (Vdss) 800 V Current - Continuous Drain (Id) @ 25°C 4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.3Ohm @ 2A, 10V Vgs(th) (......

Shenzhen Zhaocun Electronics Co., Ltd.
China

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IPP65R110CFDA High Power N Channel Mosfet Logic Level N 650V 31.2A Tc 277.8W PG-TO220-3

... MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650 V Current - Continuous Drain (Id) @ 25ﾂｰC 31.2A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 110mOhm @ 12.7A, 10V Vgs(......

Shenzhen Zhaocun Electronics Co., Ltd.
China

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ATP114-TL-H Diode Transistor P-Channel Mosfet 60 V 55A Ta 60W Tc Surface Mount ATPAK

...ATPAK Features:ATP114-TL-H Category Single FETs, MOSFETs Mfr onsemi FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain (Id) @ 25°C 55A (Ta) Driv...

Shenzhen Zhaocun Electronics Co., Ltd.
China

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3.3V 4A IGBT MOSFET Gate Driver IC NCV57001FDWR2G Reel Packaging

3.3V 4A IGBT MOSFET Gate Driver IC NCV57001FDWR2G Reel Packaging NCV57001FDWR2G[ISOLATED HIGH CURRENT AND HIGH E]Gate drive IC SOIC-16 Manufacturer: onsemi Product Category: Gate Drivers RoHS: Details Product: ...

QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED
China

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100V N Channel Power MOSFET luxin semi YSK038N010T1A designed for battery management and UPS systems

...MOSFET This 100V N-Channel Power MOSFET series, including YSP040N010T1A, YSK038N010T1A, and YSF040N010T1A, offers extremely low on-resistance (RDS(on)) and excellent Qg x RDS(on) product (FOM). These devices...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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TO247 3 packaged Silicon Carbide FET onsemi UF3C065080K3S ideal for replacing Si IGBTs and Si MOSFETs

... gate-drive characteristics enable it to serve as a direct replacement for Si IGBTs, Si FETs, SiC MOSFETs, and Si superjunction devices. Available in a TO247-3 package, this device offers ultra-low gate char...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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Toshiba TK30S06K3L T6L1 NQ MOSFET offering small package size and excellent switching characteristics

...to the absence of carrier storage effect, ruggedness without current concentration, low drive power as a voltage-controlled device, and easy parallel connection. Key advantages include guaranteed avalanche c...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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voltage controlled MOSFET TOSHIBA TK20S06K3L T6L1 NQ featuring trench and double diffusion structure

...MOSFET Product Guide 2009-9 Toshiba MOSFETs are designed to meet the demands of ultra-high-density applications, offering superior frequency and switching characteristics due to their trench structure and do...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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MOSFET TOSHIBA TK40P04M1 T6RSSQ for AC adapters and lithium ion secondary battery protection circuits

... structure and double-diffusion MOS (D-MOS) structure. Key advantages include no carrier storage effect, ruggedness, low drive power, and ease of parallel connection. These devices are ideal for switching po...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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TOSHIBA TK18E10K3S1X S high ruggedness MOSFET designed for power management and reduced power consumption

...MOSFET Product Guide 2009-9 Toshiba MOSFETs are designed to meet the demands of a wide range of ultra-high-density applications. They offer superior frequency and switching characteristics due to their trenc...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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TOSHIBA TPCA8051 H T2L1 VM MOSFET designed for power management in AC adapters and motor driver systems

Toshiba MOSFET Product Guide Toshiba's MOSFET devices are designed to meet the demands of ultra-high-density applications. They offer superior frequency and switching characteristics, ruggedness, low drive powe...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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TOSHIBA TK40S10K3Z T6L1 NQ MOSFET for in AC adapters switching power supplies and battery protection

..., and low drive power. They are suitable for a wide range of applications including switching power supplies, AC adapters, motor drivers, and lithium-ion ......

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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DRV8821DCAR Power Path Management IC Motor / Motion / Ignition Controllers & Drivers Dual Stepper Motor Controller/Drive

...Drive 1 Features Dual PWM Microstepping Motor Driver – Built-In Microstepping Indexers – Up to 1.5-A Current Per Winding – Three-Bit Winding Current Control Allows up to Eight Current Levels – Low MOSFET On-...

ChongMing Group (HK) Int'l Co., Ltd
China

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HEXFET Power Mosfet DC Motor Drive Synchronous Rectification in SMPS Uninterruptible Power IRLB3034PBF

Applications ��DC Motor Drive ��High Efficiency Synchronous Rectification in SMPS ��Uninterruptible Power Supply ��High Speed Power Switching ��Hard Switched and High Frequency Circuits Benefits ��Optimized for Logic...

ChongMing Group (HK) Int'l Co., Ltd
China

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LM3409MYX/NOPB PFET Buck Controller transistor integrated circuit for High Power LED Drives

PFET Buck Controller for High Power LED Drives Features �� 2��, 1A Peak MosFET Gate Drive �� VIN Range: 6V to 42V (LM3409) �� VIN Range: 6V to 75V (LM3409HV) �� Differential, High-side Current Sense �� Cycle-by-Cycle...

ChongMing Group (HK) Int'l Co., Ltd
China

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ABB UNS0881A-P,V1 3BHB006338R0001 Gate Drive Interface Board

... Interface (GDI) PCB. This component is designed to control and supply power to gate drivers, which in turn control power semiconductors such as IGBTs and MOSFETs in power electronic applications. It...

Joyoung International Trading Co.,Ltd
Fujian,China

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Chassis Mount Mosfet Power Module N- Channel 500V SOT227B IXFN48N50

Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 48A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max)...

Shenzhen Koben Electronics Co., Ltd.
Guangdong,China

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