| Sign In | Join Free | My burrillandco.com |
|
...Electronics High Performance Low Loss High Current Switching. Description: The IRGB4062DPBF is a N-channel MOSFET, housed in a TO-252 package. It is designed for use in a variety of applications, including p...
... Threshold Voltage: 2.5V 7. Pulsed Drain Current: 16.5A 8. Package Type: TO-252 Why buy from us >>> Fast / Safely / Conveniently • SKL is a Stock keeper and trade company of Electronic components .Our branch...
... a low on-resistance, low gate charge, low input capacitance, and a low input capacitance. Product Parameters: • Drain-Source Voltage (VDS): 20V • Drain-Source On-State Resistance (RDS(on)): 0.0035 ohm • Gat...
...Electronics Reliable High-Performance MOSFETs for Power Management Description: The IRL U024NPBF is a N-channel MOSFET from International Rectifier. It is a logic level FET suitable for switching and amplifi...
... Vds - Drain-Source Breakdown Voltage: 100V Id - Continuous Drain Current: 0.22A Rds On - Drain-Source Resistance: 0.06 Ohm Power Dissipation: 8W Vgs - Gate-Source Voltage: 10V Maximum Operating Temperature:...
... Product Parameters: • Drain-Source Voltage (VDS): 30V • Drain Current (ID): 30A • Gate-Source Voltage (VGS): ±20V • Continuous Drain Current (ID): 28A • Power Dissipation (PD): 114W • Operating Temperature ...
IRFD120PBF High-Performance N Channel MOSFET for Power Electronics Applications Parameters: - Drain-Source Voltage (VDS): 100V - Drain Current (ID): 10A - RDS(on): 0.0055Ω - Gate-Source Voltage (VGS): ±20V - Po...
... - High dV/dt Capability - RoHS Compliant Why buy from us >>> Fast / Safely / Conveniently • SKL is a Stock keeper and trade company of Electronic components .Our branches office include China, Hong Kong, Si...
SPW20N60C3 MOSFET Power Electronics High-Performance Low Loss Switching for High Power Applications Package Type: TO-220 Maximum Drain Source Voltage (Vds): 600V Maximum Gate Source Voltage (Vgs): ±20V Drain Cu...
... RDS(on)@25°C: 0.032Ω • Gate-Source Voltage: ±20V • Power Dissipation: 600W • Operating Temperature Range: -55°C to 150°C • Mounting Type: Through Hole • Package / Case: TO-247-3 Why ......
... charge and low on-resistance. It is ideal for high-performance buck, boost, and inverting applications. Parameters: - Technology: N-Channel - Drain-Source Voltage: 60V - Drain Current: 28A - Gate-Source Vol...
... handling capability. This device is ideal for switching applications, including motor control and power conversion. Product Specifications: • Drain-Source Voltage (Vdss): 100V • Gate-Source Voltage (Vgs): ±...
... Gate Charge - Low Input and Output Capacitance - Low Crss - Lead Free, RoHS Compliant Parameters: - Drain Source Voltage (VDS): 100V - RDS(on): 0.045Ω - Gate-Source Voltage (VGS): 20V - Drain Current (ID): ...
IRF3703PBF MOSFET Power Electronics High Efficiency High Voltage Low On Resistance The IRF3703PBF is a high performance, low on-resistance, N-channel MOSFET from International Rectifier. It utilizes the latest ...
IRFPG50PBF MOSFET Power Electronics High Voltage and High Current for Maximum Efficiency Product Description: The IRFPG50PBF is a 600V N-Channel MOSFET transistor with a maximum drain current of 27A. It has an ...
...maximum drain current of 30A, a maximum gate-source voltage of ±20V, a maximum power dissipation of 1.7W, and a maximum junction temperature of 175°C. It is constructed with a P-channel MOSFET with a fast sw...
...Electronics High-Performance High-Reliability Solution for Your Applications Description: This is an advanced power MOSFET designed for use in a wide variety of switching applications. Parameters: • Drain-So...
...Electronics Ideal for Automotive Applications Product Name: IRFR014TRLPBF MOSFET Description: This MOSFET is a N-Channel Enhancement Mode MOSFET designed for use in high frequency DC-DC converters and low si...
...Electronics High Efficiency and Reliable Operation Product Description: The IRFL014TRPBF is a N-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) from International Rectifier. It is a low-vo...
...Electronics High Performance Reliable Power Switches Description: This is a N-Channel Power MOSFET designed for high-speed switching applications. It has a maximum drain-source voltage of 100 V, a maximum dr...