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... cycles/64ms • Clock Frequency: 166MHz • Operating Current (Idd): Active Read: 4.2mA • Operating Current (Idd): Active Program/Erase: 2.6mA • Write...
Product: W25Q80EWSNIG Flash Memory Chip Parameters: - Capacity: 8Mb - Voltage: 2.7V - 3.6V - Number of Pins: 8 - Operating temperature: -40C to +85C - Endurance: 100,000 program/erase cycles - Data Retention:...
...Features: • 2 Mbit (256 K x 8 bit) Flash memory • Single voltage supply operation: 2.7 - 3.6 V • Read, Program and Erase operations • Serial peripheral interface (SPI) • Maximum clock frequency: 50 MHz • Adv...
... to 3.6V supply voltage • 4,096 bytes minimum page size • Single supply operation • High Endurance (up to 100,000 erase/write cycles) • 8,192 bytes minimum block size • Fast programming time (10 µs typical) ...
... • Program memory: 8-Kbyte Flash memory; data retention 20 years at 55 °C after 100 cycles • RAM: 1 Kbyte • Data memory: 128-byte true data EEPROM; endurance up to 100 k write/erase cycles Clock, reset and s...
... • High Endurance Flash Memory (up to 10k write/erase cycles) • Operating Voltage: 2.7V - 5.5V • Power Consumption at 1MHz, 2.7V, 25°C: 0.7mA • Program Memory: 1K Bytes of In-System Programmable Flash • Data...
... program/erase cycles or data retention of 25 years at temperatures ranging from -40° C to +125° C. Specification Of S25FL256SAGMFB000 Part Number S25FL256SAGMFB000 Data Bus ......
.... Specification Of S26HS512TGABHV013 Part Number: S26HS512TGABHV013 Clock Rate: 50 MHz SPI Fast Read: 20.75 MBps Sector Erase: 4KB SDR Read: 50MHz Program: 50 MA Features Of...
... Of S26HS01GTGABHV020 S26HS01GTGABHV020's EAC takes transactions from the host system for programming and erasing the flash memory arrays and performs all the complex operations needed to change the non-...
...h separate local instruction and data buses as well as a third bus for peripherals. Specification Of LPC1765FBD100K Part Number: LPC1765FBD100K On-Chip Flash Program Memory: 256 KB Page Erase And Write: 512 ...
64-LBGA Package MT28EW01GABA1HPC-0SIT Parallel NOR Flash Embedded Memory Product Description Of MT28EW01GABA1HPC-0SIT MT28EW01GABA1HPC-0SIT's READ, ERASE, and PROGRAM operations are performed using a single low...
...-0SIT Flash Embedded Memory IC Product Description Of MT28EW512ABA1LJS-0SIT MT28EW512ABA1LJS-0SIT's program and erase commands are written to the command interface of the memory. Specification Of MT28EW512AB...