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... Static Operation • High Endurance, Non-volatile Memory Segments –2K/4K/8K Bytes of In-System, Self-programmable Flash Program Memory •Endurance: 10,000 Write/Erase Cycles –128/256/512...
...Program memory: 8 Kbyte Flash memory; data retention 20 years at 55 °C after 100 cycles • RAM: 1 Kbyte • Data memory: 128 bytes true data EEPROM; endurance up to 100 k write/erase cycles Clock, reset and sup...
...M29F800FB5AN6E2 is 8Mbit Parallel NOR Flash Embedded Memory IC, It enables READ, ERASE, and PROGRAM operations using a single, low-voltage (4.5–5.5V) supply. Specification Of M29F800FB5AN6E2 Part Number: M29...
... E2PROM) organized as (4096 + 256) bytes 64 pages 2048 blocks. TC58NYG2S0HBAI4 has two 4352-byte static registers which allow program and read data to be transferred between the register and the memory c...
... and Software Protection • Block Write Protection− Protect 1/4, 1/2 or Entire EEPROM Array • Low Power CMOS Technology • 1,000,000 Program/Erase Cycles • 100 Year Data Retention •...
...)) The actual read/write speed shall be printed on the product packaging Data Retention: Up to 10 years Durability: >100, 000 program/erase cycles Weight: 15g (1GB-8GB) 24g (16GB) Certificates: CE,...