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...In-System Programmable (ISP) Flash Memory – Endurance: 1000 Write/Erase Cycles • 4.0V to 5.5V Operating Range • Fully Static Operation: 0 Hz to 33 MHz • Three-level Program Memory Lock • 256 x 8-bit Internal...
... • 8K Bytes of In-System Reprogrammable Flash Memory – Endurance: 1,000 Write/Erase Cycles • Three-Level Program Memory Lock • Eight Interrupt Sources • Programmable Serial Channel • Low Power Idle and Power...
... Static Operation: 0 Hz to 24 MHz • Two-level Program Memory Lock • 128 x 8-bit Internal RAM • 15 Programmable I/O Lines • Two 16-bit Timer/Counters • Six Interrupt ......
... of Write Detection: –DATA Polling –RDY/BSY Pin ■ Hardware Write Protection ■ CMOS and TTL Compatible I/O ■ 10,000 Program/Erase...
...Fully Static Operation – Up to 16 MIPS Throughput at 16 MHz – On-Chip 2-cycle Multiplier • Non-volatile Program and Data Memories – 64K/128K/256K Bytes of In-System Self-Programmable Flash Endurance: 10,000 ...
...Bytes of Reprogrammable Flash Memory • Endurance: 1000 Write/Erase Cycles • 4V to 5.5V Operating Range • Fully Static Operation: 0 Hz to 33 MHz • Three-level Program Memory Lock • 256 x 8-bit Internal RAM • ...
... Static Operation: 0 Hz to 24 MHz • Two-level Program Memory Lock • 128 x 8-bit Internal RAM • 15 Programmable I/O Lines • Two 16-bit Timer/Counters • Six Interrupt ......
...Memory DISTINCTIVE CHARACTERISTICS ■ Single power supply operation — 5.0 V ± 10% for read, erase, and program operations — Simplifies system-level power requirements ■ Manufactured on 0.32 µm process technol...
...Memory DISTINCTIVE CHARACTERISTICS ■ Single power supply operation — 5.0 V ± 10% for read, erase, and program operations — Simplifies system-level power requirement ■ Manufactured on 0.32 µm process technolo...
... and OUTPUTS TTL ►COMPATIBLE DURING READ and PROGRAM ►COMPLETELY STATIC DESCRIPTION The M2732A is a 32,768 bit UV erasable and electrically programmable memory EPROM. It is organized as 4,096 words by 8 bits...
... • Fully Static Operation: 0 Hz to 33 MHz • Three-level Program Memory Lock • 256 x 8-bit Internal RAM • 32 Programmable I/O Lines • Three 16-bit Timer/Counters • Eight Interrupt Sources • ......
... Range 2.Fully Static Operation: 0 Hz to 33 MHz 3.Three-level Program Memory Lock 4.256 x 8-bit Internal RAM 5.32 Programmable I/O Lines 6.Three 16-bit Timer/Counters 7.Eight Interrupt Sources 8.......
... as fast as 55 ns • Low power consumption — 20 mA typical active read current — 30 mA typical program/erase current — 1 µA typical...
...: 0 Hz to 24 MHz • Three-level Program Memory Lock • 128 x 8-bit Internal RAM • 32 Programmable I/O Lines • Two 16-bit Timer/Counters • Six Interrupt ......
AM29F800BT-90ED 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only holt integrated circuits DISTINCTIVE CHARACTERISTICS Single power supply operation 5.0 Volt-only operation for read, erase, and prog...
...m-ercedes benz , it support reading out & erasing trouble code,reading the real-time data of sensor and actuator, coding and programming. Star diagnose SD Connect 4 support wireless diagnose, support K line,...
... and programming. Also support wireless diagnose, support K line, CAN BUS and UDS protocol, with multi-language. 2016.12 MB Star Diagnosis ......
...Memory DISTINCTIVE CHARACTERISTICS ■ Single power supply operation — 5.0 V ± 10% for read, erase, and program operations — Simplifies system-level power requirements ■ Manufactured on 0.32 µm process technol...
...Memory DISTINCTIVE CHARACTERISTICS ■ Single power supply operation — 5.0 V ± 10% for read, erase, and program operations — Simplifies system-level power requirements ■ Manufactured on 0.32 µm process technol...
... high voltages or VPP control circuits —Self-timed —No erase before write —No complex programming algorithms —No overerase problem • Low power CMOS —Active: 60mA —Standby: 500µA • Software data protection —P...