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...: 16K x 8 - Data Retention: 100 years - Endurance (Write/Erase Cycles): 100,000 - Maximum Current: 150mA - Program Time (typical): 150ms/word - Erase Time (typical): 500ms/sector - Write Time (typical): 5ms/...
... based applications in which program code is shadowed from Flash memory into embedded or external RAM for execution. The flexible erase architecture of the AT25F512B, with its erase granularity as small as 4...
... consumer based applications in which program code is shad owed from Flash memory into embedded or external RAM for execution. The flexible erase architecture of the AT25DF021, with its erase granularity as ...
... consumer based applications in which program code is shad owed from Flash memory into embedded or external RAM for execution. The flexible erase architecture of the AT25DF021, with its erase granularity as ...
... consumer-based applications in which program code is shadowed from Flash memory into embedded or external RAM for execution. The flexible erase architecture of the AT25DF041A, with its erase granularity as ...
...Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048+64) bytes x 64 pages x 2048 blocks. The device has a 2112-byte static registers which allow program and read data to be transferred...
... READ, ERASE, and PROGRAM operations using a single, low-voltage (4.5–5.5V) supply. On power-up, the device defaults to read mode and can be read in the same way as a ROM or EPROM. The device is divided into...
... consumer-based applications in which program code is shadowed from Flash memory into embedded or external RAM for execution. The flexible erase architecture of the AT26DF161A, with its erase granularity as ...
...-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. FEATURES SUMMARY ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIMES: 70, 90ns ■...
...programming tool that combines the powerful IMMO and programming functions with OE-level diagnostics and advanced service functions, Being used with IMKPA Accessories could help to add BMW EWS3 key learning,...
... Programming (ICP and IAP). 10K write/erase cycles guaranteed, data retention: 20 years at55°C. – 256 bytes RAM Attributes of ST72F260G1M6 Product Status Obsolete ......
... Retention: 20 Years - Endurance: 100,000 Erase/Program Cycles - Page Size: 4KB - Read/Write Speed: 166MHz - Interface: 1.8V/3.3V - Packaging Type: Tray - RoHS ......
... Frequency: 104MHz - Endurance: 100,000 erase/program cycles - Data Retention: 20 years - Supply Voltage: 2.7V-3.6V - Operating Temperature Range: -40°C to +85°C - Dimensions: ......