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...Fast Switching Speed TO-220AB Part Number Package Die Io (A) VBR VF(25℃) IR(25℃) VF(125℃) IR (125℃ IFSM (A) Tj (℃) If (A) Typ (V) Max (V) Typ (uA) Max (uA) If (A) Typ (V) Typ (mA) MBR10200CT TO-220AB 1 10 20...
... Product Description: The High Voltage MOSFET product features a gate-source voltage (Vgs) of ±30V, providing ample voltage for most switching applications. Additionally, this MOSFET has been...
...Fast Switching Speed Diode for Speed Applications Part Number Package Die Io (A) VBR VF(25℃) IR(25℃) VF(125℃) IR (125℃ IFSM (A) Tj (℃) If (A) Typ (V) Max (V) Typ (uA) Max (uA) If (A) Typ (V) Typ (mA) MBR6020...
2.0amp Surface Mount Glass Fast Recovery Rectifier Features Fast switching for high efficiency Low Power Loss,High Efficiency High current capability For Use in Low Voltage Application Plastic ......
... Source Capacitance: 990pF - Operating Temperature Range: -55C to 175C - Mounting Style: Through Hole - Package/Case: TO-220AB Why buy from us >>> Fast / Safely / Conveniently •...
...'s are a practical replacement for HID or standard lights as they have a lower energy consumption, longer lifetime, improved brightness, smaller size, faster switching, and greater durability and reliability...
IRLML6302TRPBF MOSFET Power Electronics Fast Switching with Low On-Resistance for Maximum Efficiency Product Features: • Low On-Resistance: 2.6mΩ (VGS = 10 V) • High-Speed Switching: tON = 7.0ns (VGS = 10 V) • ...
...Power Electronics Features: • N-Channel MOSFET • Optimized for Low Voltage, High Speed Switching • Low Gate Charge • Low On-Resistance • Fast Switching • Low Input Capacitance • 100% Avalanche Tested • RoHS ...
... in high voltage applications such as automotive, industrial and medical. It features a low on-resistance of 0.045 Ω, fast switching speeds and low capacitances. This device also offers low gate charge, ther...
...Fast Switching Speed 100% Avalanche Tested Compact DPAK Package Lead-Free & RoHS Compliant Applications Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and...
...Fast Switching and Logic Level Control for Compact Designs Features AEC-Q101 qualified (Please see the orderable part number list) 175℃ MOSFET 4.5 V drive Low drain-source on-resistance : RDS(ON) = 65 mΩ (ty...
...Package Logic Level Fast Switching High Robustness Avalanche Rated for Motor & Power Conversion Features 1:High Voltage Capability: A drain-source voltage (Vds) of 200V, making it suitable for high-voltage a...
...Fast Switching Low Power Loss High Current Capability DO-201AD Package for SMPS & Polarity Protection FEATURES ● AEC-Q101 qualified available ● Low forward voltage drop ● Low power loss, high efficiency ● Gu...
...Fast Switching High Efficiency 150°C Rating Ultra-Low Gate Charge Superior dv/dt Ruggedness Halogen-Free & RoHS Compliant Features 1:Ultra-Low On-Resistance (3.8mΩ): Minimizes conduction losses for higher sy...
... Fast Switching Avalanche Rugged Eco-Mode Low Gate Charge TO-220FP Package RoHS Certified for SMPS & Motor Drives Features • 100% avalanche tested • Low input capacitance and gate charge • Low gate input res...
... MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and...
...Fast Switching Diode SOT23 Features • These diodes are also available in other case styles including the DO35 case with the type designation 1N4148, the MiniMELF case with the type designation LL4148, and th...
1N4148 FAST SWITCHING DIODE power rectifier diode high voltage rectifier diode Features Fast Switching Speed General Purpose Rectification Silicon Epitaxial Planar Construction Mechanical Data Case: DO-35 Leads...
1N4148 FAST SWITCHING DIODES 5w led diode FEATURES Silicon Epitaxial Planar Diode Fast switching diode This diode is also available in other case styles including: the SOD-123 case with the type designation 1N4...
... and Reel ♦Fast Switching These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the f...