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...Transistor , Custom Field Effect Transistor High Power Transistor DESCRIPTION The 30P06D uses advanced trench technology to provide excellent R DS(ON) and low gate charge .This device is suitable for use as ...
...is device is suitable for use as a load switch or in PWM applications P Channel Transistor GENERAL FEATURES V DS =- 60V,I D =-50A R DS(ON) < 25mΩ @ V GS =-10V R DS(ON) < 30mΩ @ V GS =-4.5V High Power and ......
...Transistor , Durable High Amp Transistor Mosfet Driver Using Transistor Description: The AP6H03Suses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs ma...
...cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability approv...
... control Switch Mode Power Supplies (SMPS) Power-Over-Ethernet (PoE) Solar inverters Automotive applications Logic Level Transistor Description: The AP50N10P uses advanced trench technology to provide excell...
... in the 806 to 870-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the dra...
...135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and ...
...Transistor Products Description: 1. FAIRCHILD SEMICONDUCTOR FDMS6681Z transistor, MOSFET, P-channel, -49A, -30V, 0.0027Ohm, -10V, -1.7V 2. The FDMS6681Z is A-30V P-channel PowerTrench® MOSFEts have been spec...
...,Q,M) TOSHIBA Field Effect Transistor 13A 600V 0.33 Ohm N-Channel MOS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Applications Switching Voltage Regulators Description Toshiba π-MOS VII MOSFET...
...Transistor High Power Low Noise Performance HMC849ALP4CETRR RF Power Transistors Product Features: -Operating Frequency: up to 4.5GHz -Gain: 11-14dB -Single-ended Output Power: +30dBm -Package Type: Surface ...
AD9361BBCZ RF Power Transistor - High Power High Reliability The AD9361BBCZ is a high-power, high-efficiency N-channel RF power transistor designed for use in the 900 MHz ISM band. The device features a wide ga...
... in the 440- to 520-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the dr...
... in the 806 to 870-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the dra...
...135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and ...
...Transistors Manufacturer: Infineon Product Category: MOSFETs RoHS: - REACH - SVHC: - Technology: Si Mounting Style: Through Hole Package / Case: TO-220-3 Transistor Polarity: N-Channel Number of Channels: 1 ...
... Complementary NPN - PNP transistors Bipolar Discrete Semiconductor Products Complementary power transistors Description: The devices are manufactured in planar technology with “base island” layout. The resu...
... is housed in the SOT−223 package, which is designed for medium power surface mount applications. PRODUCT PROPERTIES Product Status Active Transistor Type NPN Current - Collector (Ic) (Max) 1 A Voltage - Col...
...Transistors TO-3P TIP147 10A 100V PNP DarliCM GROUPon Bipolar Power Transistor TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) Description The devices are manufactured in planar technology with ...
...Transistors Bipolar (BJT) Transistor PNP 100V 6A 65W Features ■ Complementary PNP-NPN devices ■ New enhanced series ■ High switching speed ■ hFE grouping ■ hFE improved linearity Applications ■ General purpo...
PIMN31 NPN PNP Transistors 500 mA, 50 V NPN/NPN double resistor-equipped transistor 1. Product prole 1.1 General description 500 mA, 50 V NPN/NPN double Resistor-Equipped Transistor (RET) in a small SOT457 (SC...