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SI4010-C2-GTR RF Power Transistor Product Features: 900 MHz to 2.7 GHz Frequency Range 10 W Output Power at 2.4 GHz 30 V Nominal Drain Voltage 6.8 dB Typical Gain at 2.4 GHz 56% Typical Efficiency at ...
MMBTA43LT1G high voltage power mosfet transistors , rf power mosfet transistors High Voltage Transistors NPN Silicon ORDERING INFORMATION Device Order Number Package Type Shipping† MMBTA42LT1G SOT−23 (Pb−Free) ...
IPEX U.FL SMD SMT PCB Mount Female RF Connector one generation high power load Product Details: Product name: DALEE RF Connector Secification: one generation Type : Female Certification: ISO9001,UL,ROHS and the...
Wifi Antenna U.FL-R-SMT coaxial SMT RF Connector , high power hybrid coupler Product Details: Product name: DALEE RF Connector Secification: one generation Type : Female Certification: ISO9001,UL,ROHS and the l...
...RF transistor For MOBILE RADIO DESCRIPTION The RA45H8994M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 896- to 941-MHz range. The battery can be connected directly...
...High Power RF Resistor 250W 200ohm High Power Flange Resistor 800W 600W 500W 250W 100W product name: Electronic component passive component RF resistor 50 ohm 100 ohm 1000W flange installation terminal resis...
...Transistors - BJT 50 V Small-Signal BJT Manufacturer: Microchip Product Category: Bipolar Transistors - BJT RoHS: N Technology: Si Mounting Style: Through Hole Package / Case: TO-18-3 Transistor Polarity: NP...
M68702H 150-175MHz, 12.5V, 60W, RF Power module transistor for FM MOBILE RADIO List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND PART NUMBER MFG/BRAND SS513AT HONEYWELL ......
M68702H 150-175MHz, 12.5V, 60W, RF Power module transistor for FM MOBILE RADIO List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND PART NUMBER MFG/BRAND SS513AT HONEYWELL ......
...POWER AMP TRANSISTOR TPS2330IPWR WITH CIRCUIT BREAKER Type: Hot Swap Controller Applications: General Purpose Programmable Features: Circuit Breaker, Fault Timeout, Slew Rate Voltage - Supply: 3V ~ 13V High ...
...HIGH POWER TRANSISTOR IRFR024NTRPBF D- PAK N- CHANNEL 55V 17A 45W Detailed Product Description FET Type: N-Channel Operating Temperature: -55°C ~ 175°C Moisture Sensitivity Level (MSL): 1 (Unlimited) Lead Fr...
...High Power RF Power Amplifier 50dBm Gain LAN 2kg Weight Features: The integrated Noise source and RF PA in one house, smaller size and only connect DC28,6A to it Prevent the interference of high radiated RF...
... Power Bipolar Transistors These complementary devices are lower power versions of the popular NJW3281G and NJW1302G audio output transistors. With superior gain linearity and safe operating area performance...
... the interference of high radiated RF power to monitoring-unit and PA-Circuit; We can provide appropriate radiator to you, one radiator can be installed 2 50W-Jammer-Module. Main Specification: No. Item ......
IPEX IPX MHF UFL Antenna PCB Connector Straight Receptacle Connector with high power dummy load Product Details: Product name: DALEE RF Connector Secification: one generation Type : Female Certification: ISO900...
... With Various Types of Logic ►Relay-Driver Applications description/ordering information The ULN2001A, ULN2002A, ULN2003A, ULN2004A, ULQ2003A, and ULQ2004A are high-voltage, high-current Darlington transisto...
...Power Mosfet Transistors / Electronics Component Transistor FEATURES * High gain and low saturation voltages COMPLEMENTARY TYPE – BCX68 PARTMARKING DETAIL – BCX69 – CJ BCX69-16 – CG BCX69-25 – CH ABSOLUTE MA...
...Power MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon...
LM1951T switching power mosfet amplifier ic chip Power Mosfet Transistor LM1951 Solid State 1 Amp Switch General Description The LM1951 is a high current, high voltage, high side (PNP) switch with a built-in er...
... applications. Features • N−Channel for Higher Gain • Drain and Source Interchangeable • High AC Input Impedance • High DC Input Resistance • Low Transfer and Input Capacitance • Low Cross−Modulation and Int...