| Sign In | Join Free | My burrillandco.com |
|
ZXTN25100BFHTA Bipolar (BJT) Transistor NPN 100 V 3 A 160MHz 1.25 W Surface Mount Manufacturer: Diodes Incorporated Product Category: Bipolar Transistors - BJT RoHS: Details Mounting Style: SMD/SMT Package / Ca...
...RF Amplifier 2.4GHz 802.11b/g/n WLAN Power Amplifier The YP242434 is a high-power, high- linearity power amplifier based on the highly-reliable InGaP/GaAs HBT technology. It can be easily configured for high...
High -power non -sensing frequency resistor 800w 100 ohm RF Resistor High Power Flange Resistor product name: Electronic component passive component RF resistor 50 ohm 100 ohm 1000W flange installation terminal...
High Voltage Power Mosfet Transistor BTA16-600BRG 16A TRIACS BTA / BTB 16 DESCRIPTION Available either in through-hole or surface-mount packages, the BTA/BTB16 and T16 triac series is suitable for general purpo...
...cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability approv...
...cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability approv...
... The TDA 2050 is a monolithic integrated circuit in Pentawatt package, intended for use as an audio class AB audio amplifier. Thanks to its high power capability the TDA2050 is able to...
...UHF power LDMOS transistor Description: Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in a SOT540A package with ceramic cap. The common source is connected to the mounting flange. App...
WiMAX power LDMOS transistor BLF6G27S-45K NXP New and Original Part No BLF6G27S-45K Manufacturer NXP Package Standard Packaging Description New and Original Shipping: 1, We can shipping all over the world by ...
...RF Sub–Micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N–Channel Enhancement–Mode Lateral MOSFETs 945 MHz, 30 W, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs Designed for broadband commercial and i...
... with a durable ceramic core and a flame-retardant coating, it ensures exceptional thermal conductivity, mechanical strength, and long-term electrical stability—even in high-load and high-temperature environ...
Features Good hFE linearity High fT frequency Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications Linear and switching industrial equipment Description ...
...High Voltage Mosfet 48A 500V DMOS AC−DC Power Supply Transistor Description UniFET MOSFET is ON Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored ...
..., making it ideal for use in power supplies and other electronic devices. Low RDS(on): With a low on-resistance (RDS(on)) of just 10mOhms, this transistor offers low conduction losses and high efficiency. Ro...
... is also called RIG RF resistor, RF RF resistor, high frequency RF resistor, flange RF resistor, load RF resistor, RF resistor and high power microband resistors Product Features: 1.Small volume, large power...
...High Power MOSFET is a type of field-effect transistor designed for use in high voltage, high power applications such as Solar Inverter, High-voltage DC/DC Converter, Motor Driver, UPS Power Supply, Switchin...
...POWER DARLINGTON TRANSISTORS ■ STMicroelectronics PREFERRED SALESTYPES ■ COMPLEMENTARY PNP - NPN DEVICES ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS ■ LINEAR AND SWITCHING INDUSTRIAL EQUIP...
...%typ.on HF Band APPLICATION For output stage of high power amplifiers in HF Band mobile radio sets. List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND PART NUMBER MFG/......
...: 60%typ.on HF Band APPLICATION For output stage of high power amplifiers in HF Band mobile radio sets. List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND PART NUMBER MFG/......
... noise figure, high gain, and high-speed performance in compact packages. Key Features: Type: NPN RF Transistor Transition Frequency (ft): 25 GHz Noise Figure (NF): 0.75 dB at 2 GHz Gain (Gmax): 21 dB at 1.8...