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... for use in switching applications. It features an advanced trench technology and a high-cell density cell design to provide improved RDS(ON). The TO-220 package provides excellent thermal performance and ru...
...high-power Drone Module 2000-4000MHz rf power amplifier module in amplifying high-frequency signals The 2000-4000 MHz RF power amplifier is a high-power device operating within a frequency range of 2000 to 4...
1.5uA Low Power Mosfet Transistor AS1360-33-T Positive Voltage Regulator AS1360 1.5µA Low-Power, Positive Voltage Regulator 1 General Description The AS1360 low-power, positive voltage regulator was designed to...
... clamp ■ Low current drawn from input pin ■ Diagnostic feedback through input pin ■ ESD protection ■ Direct access to the gate of the Power MOSFET (analog driving) ■ Compatible with standard Power MOSFET in...
...Power Mosfet Transistor Dual N Channel Logic PowerTrench MOSFET General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been...
...Government facility. Prison Solutions to stop smuggled phones from making calls by using RF Jammers. Our prison Jammer uses intelligent spot jamming for communication blocking, the same form of RF jamming fo...
...Power Mosfet Transistors Field Effect Transistor Discrete N-Channel N-channel 600 V, 0.13 Ω typ., 21 A MDmesh™ DM2 Power MOSFETs in D²PAK, TO-220 and TO-247 packages App Characteristics Features Fast-recover...
...RF Power Amplifier for various high-frequency and high-power applications Description The 500-3000MHz 50W RF Power Amplifier is designed for a wide range of applications in communication systems, electronic ...
...-Source On-Resistance (Vgs=10V) • 3.2V Maximum Gate-Source Threshold Voltage • -55°C to +150°C Operating Temperature Range • High Speed Switching • TO...
Wireless Communication Module A5G35S004NT6 48V 24.5 dBm Airfast RF Power GaN Transistor [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Gua...
Wireless Communication Module A5G38H055NT4 125V Airfast RF Power GaN Transistor DFN-6 [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guara...
Wireless Communication Module QPD0020 6GHz 35W 48V RF Power GaN Transistor [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100...
A5G08H800W19NR3 GaN IC 112W Asymmetrical Doherty RF Power GaN Transistor [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% ...
...Transistor Complementary to KTB817 for 60w High Power Amplifier Application CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 160 V Collector-Emitter Voltage VCEO 140 V Emitter-Base Voltage VEBO ...
TK35N65W High Power Transistor 35A 650V Switching Voltage 270W 115nC 80 MOhms Power Supply Applications Switching Voltage Regulators DTMOSIV Series MOSFETs Toshiba DTMOSIV MOSFETs use the state-of-the-art singl...
High Power Microwave Amplifier 9-10GHz 6kw Traveling Wave Tube RF Power Amplifier Product Overview The 9-10GHz 6kW TWT RF Power Amplifier is a high-power microwave amplifier designed for applications requiring ...
General Purpose Power Mosfet Transistor KSP2907A Equivalent PNP Amplifier Features • Collector-Emitter Voltage: VCEO= 60V • Collector Power Dissipation: PC (max)=625mW • Suffix “-C” means a Center Collector (...
...-075K9L 500000 YAGEO 1606 RES 0805 20K5 1% RC0805FR-0720K5 500000 YAGEO 1606 C.I LNK623PG 10000 POWER 1407 C.I STM32F030K6T6 10000 ST 1549 DIODO ES1J-E3/61T 180000 VISHAY 1642/EJ CAP 0603 ......
...Power Mosfet Transistor Integarted Circuts Chip Electronics ICs A part of stock list CAP 0603 150PF 50V CL10C151JB8NNNC 800000 SAMSUNG AC7502D CAP 0603 180PF 50V CL10B181KB8NNNC 800000 SAMSUNG AA20SEE RES 08...
71004SB Power Mosfet Transistor IC Chip China supplier Integared Circuit FEATURES • Wide supply voltage range of 1.2 to 3.6 V • In accordance with JEDEC standard no. 8-1A • Inputs accept voltages up to 5.5 V • ...