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High Power Semiconductor For UPS With High-Temperature Resistance And Stable Process Product Description: High Power Semiconductor High Power Semiconductor is a cutting-edge product in the field of electronics,...
... has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). Applications · Power management · Load switch · Battery protection Features · –5.3 A, ...
...High Power MOSFET High Power MOSFET is an advanced type of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) with a high power handling capacity and high frequency. It offers excellent performance, ...
RF Frequency High Power Phone Jammer Remote Control Signal Blocker Features 1. Very accurate target frequency and no diviation after long time service. 2. Effective RF output power for each band and longger int...
...Power Transistor High Power High Efficiency Low On Resistance Parameters: - Drain Source Voltage (VDS): 600V - Drain Current (ID): 24A - Gate Source Voltage (VGS): ±20V - Power Dissipation (PD): 150W - RDS(O...
...Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Avalanche Tested Reli...
...Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Avalanche Tested Reli...
...Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Avalanche Tested Reli...
...Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Avalanche Tested Reli...
... transistors, and can be used for analog switching applications. Sourced from Process 55. Absolute Maximum Ratings* Symbol Parameter Value Units VDG ......
...High Gain RF Linear Power Amplifier with SMA-Female Ports for 900-980MHz Applications) Place of Origin: Shenzhen,China Brand Name: Kimpok Certification: CE certification Model Number: KP-RFPA900 Highlight: L...
High Power Signal Jammer Home- Products - High Power Signal Jammer Customize Wireless Signal Jammer RF Module for 10-200Watt with DDS or normal simulation Item No.: CKJ-1700RF Ching Kong Technology Co.,Ltd have...
High Power Signal Jammer Home- Products - High Power Signal Jammer Customize Wireless Signal Jammer RF Module for 10-200Watt with DDS or normal simulation Item No.: CKJ-1700RF Ching Kong Technology Co.,Ltd have...
...Transistors Module FS150R12KE3 or FS15OR12KE3 FS150R12KE3 Product Description Brand: Eupec Model: FS150R12KE3 Alternate Model: FS15OR12KE3 Control way: unidirectional Pole number: two pole Package Material :...
Durable High Speed Power Switching Transistor , Power Darlington Transistor General Description • Trench Power MV MOSFET technology • Low R DS(ON) • Low Gate Charge • Optimized for fast-switching applications A...
Durable High Speed Power Switching Transistor , Power Darlington Transistor General Description • Trench Power MV MOSFET technology • Low R DS(ON) • Low Gate Charge • Optimized for fast-switching applications A...
Durable High Speed Power Switching Transistor , Power Darlington Transistor General Description • Trench Power MV MOSFET technology • Low R DS(ON) • Low Gate Charge • Optimized for fast-switching applications A...
Durable High Speed Power Switching Transistor , Power Darlington Transistor General Description • Trench Power MV MOSFET technology • Low R DS(ON) • Low Gate Charge • Optimized for fast-switching applications A...
..., as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to...
..., as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to...