Total 10009 products for high voltage power Manufacture & Suppliers

• IGBT Power Module MG75Q2YS44 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ...max) trr = 0.5µs (max) [1]Low saturation voltage : VCE (sat)= 4.0V (max) [1]Enhancement-mode [1]The electrodes are isolated from case. Specifications: part no. MG75Q2YS44 Manufacturer TOSHIBA supply ability ...

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG75Q2YS50 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ...Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1] High input impedance [1] High speed : tf= 0.3 µs (Max) @Iinductive load [1] Low satur...

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG100G1AL2 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ... Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]High input impedance [1]High spee : tf = 0.35µs (max) trr = 0.15µs (max) [1]Low saturation v...

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG100G1AL2-4 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ... Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]High input impedance [1]High spee : tf = 0.35µs (max) trr = 0.15µs (max) [1]Low saturation v...

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG100G1AL3 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ... Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]High input impedance [1]High spee : tf = 0.35µs (max) trr = 0.15µs (max) [1]Low saturation v...

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG100G1FL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ... Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]High input impedance [1]High spee : tf = 0.35µs (max) trr = 0.15µs (max) [1]Low saturation v...

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG100G2CL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ... Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]High input impedance [1]High spee : tf = 0.35µs (max) trr = 0.15µs (max) [1]Low saturation v...

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG100G2DL1- TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ...Module Silicon N Channel IGBT Description: High Power Switching applications Motor Control Applications Applications: [1]High input impedance [1]High speed : tf = 0.5µs (Max) trr = 0.5µs (Max) [1]Low saturat...

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG100G2YL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ... Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]High input impedance [1]High spee : tf = 0.35µs (max) trr = 0.15µs (max) [1]Low saturation v...

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG100G2YS1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ... Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]High input impedance [1]High spee : tf = 0.35µs (max) trr = 0.15µs (max) [1]Low saturation v...

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG100H2CL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ... Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]High input impedance [1]High spee : tf = 0.35µs (max) trr = 0.15µs (max) [1]Low saturation v...

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG100H2DL2 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ... Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]High input impedance [1]High spee : tf = 0.35µs (max) trr = 0.15µs (max) [1]Low saturation v...

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG100J2YS50 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ... input impedance. [1]Includes a complete half bridge in one package. [1]Enhancement-mode. [1]High speed : tf = 0.30µs (Max) (IC = 100A) trr = 0.15µs (Max) (IF = 100A) [1]Low saturation voltage : VCE (sat)=2....

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG100J6ES52 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ... Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]High input impedance [1]High spee : tf = 0.35µs (max) trr = 0.15µs (max) [1]Low saturation v...

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG100M2YK1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ... Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]High input impedance [1]High spee : tf = 0.35µs (max) trr = 0.15µs (max) [1]Low saturation v...

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG100Q2YS51 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ...Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]High input impedance [1]High speed : tf = 0.3µs (Max) @Inductive load [1]Low saturatio...

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG150G2YL1- TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) =...

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG150H1FL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) =...

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG150H2CK1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) =...

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG150H2DL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) =...

  Mega Source Elec.Limited

  China

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