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Total 10009 products for high voltage power Manufacture & Suppliers

IGBT Power Module MG300J2YS50 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf= 0.30µs (max) (IC = 300A) trr = 0.15µs (max) (IF = 300A) [1]Low saturation voltage : VCE (sat) = 2.7...

Mega Source Elec.Limited
China

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IGBT Power Module MG300M1FK1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf= 0.30µs (Max.) (IC = 300A) trr = 0.15µs (Max.) (IF = 300A) [1]Low saturation voltage : VCE (sat) = 2....

Mega Source Elec.Limited
China

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IGBT Power Module MG300M1UK1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf= 0.30µs (Max.) (IC = 300A) trr = 0.15µs (Max.) (IF = 300A) [1]Low saturation voltage : VCE (sat) = 2....

Mega Source Elec.Limited
China

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IGBT Power Module MG300Q1US51 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf= 0.30µs (Max.) (IC = 300A) trr = 0.15µs (Max.) (IF = 300A) [1]Low saturation voltage : VCE (sat) = 2....

Mega Source Elec.Limited
China

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IGBT Power Module MG300Q2YS65H - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf= 0.30µs (Max.) (IC = 300A) trr = 0.15µs (Max.) (IF = 300A) [1]Low saturation voltage : VCE (sat) = 2....

Mega Source Elec.Limited
China

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IGBT Power Module MG400G1UL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30µs (Max.) (IC = 400A) trr = 0.15µs (Max.) (IF = 400A) [1]Low saturation voltage : VCE (sat) = ...

Mega Source Elec.Limited
China

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IGBT Power Module MG400H1FK1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30µs (Max.) (IC = 400A) trr = 0.15µs (Max.) (IF = 400A) [1]Low saturation voltage : VCE (sat) = ...

Mega Source Elec.Limited
China

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IGBT Power Module MG400H1FL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30µs (Max.) (IC = 400A) trr = 0.15µs (Max.) (IF = 400A) [1]Low saturation voltage : VCE (sat) = ...

Mega Source Elec.Limited
China

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IGBT Power Module MG400J1US1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30µs (Max.) (IC = 400A) trr = 0.15µs (Max.) (IF = 400A) [1]Low saturation voltage : VCE (sat) = ...

Mega Source Elec.Limited
China

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IGBT Power Module MG400J1US2 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30µs (Max.) (IC = 400A) trr = 0.15µs (Max.) (IF = 400A) [1]Low saturation voltage : VCE (sat) = ...

Mega Source Elec.Limited
China

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IGBT Power Module MG400J1US11- TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30µs (Max.) (IC = 400A) trr = 0.15µs (Max.) (IF = 400A) [1]Low saturation voltage : VCE (sat) = ...

Mega Source Elec.Limited
China

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IGBT Power Module MG400J1US21 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30µs (Max.) (IC = 400A) trr = 0.15µs (Max.) (IF = 400A) [1]Low saturation voltage : VCE (sat) = ...

Mega Source Elec.Limited
China

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IGBT Power Module MG400J1US45 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30µs (Max.) (IC = 400A) trr = 0.15µs (Max.) (IF = 400A) [1]Low saturation voltage : VCE (sat) = ...

Mega Source Elec.Limited
China

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IGBT Power Module MG400J1US51- TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30µs (Max.) (IC = 400A) trr = 0.15µs (Max.) (IF = 400A) [1]Low saturation voltage : VCE (sat) = ...

Mega Source Elec.Limited
China

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IGBT Power Module MG400Q1US11 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]High input impedance [1]High speed : tf= 0.5µs (Max.) trr = 0.5µs (Max.) [1]Low saturation v...

Mega Source Elec.Limited
China

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IGBT Power Module MG400Q1US41 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]High input impedance [1]High speed : tf= 0.5µs (Max.) trr = 0.5µs (Max.) [1]Low saturation v...

Mega Source Elec.Limited
China

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IGBT Power Module MG500Q1US2 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... (Max) trr = 0.5µs (Max) z Low saturation voltage : VCE (sat) = 4.0V (Max) z Enhancement-mode z The electrodes are isolated from case Specifications: part no. MG500Q1US2 Manufacturer TOSHIBA supply ability ....

Mega Source Elec.Limited
China

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IGBT Power Module MG500Q1US11 - TOSHIBA -TOSHIBA GTR Module Silicon N Channel IGBT

... (Max) trr = 0.5µs (Max) z Low saturation voltage : VCE (sat) = 4.0V (Max) z Enhancement-mode z The electrodes are isolated from case Specifications: part no. MG500Q1US11 Manufacturer TOSHIBA supply ability ...

Mega Source Elec.Limited
China

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IGBT Power Module MG500Q1US21 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... (Max) trr = 0.5µs (Max) z Low saturation voltage : VCE (sat) = 4.0V (Max) z Enhancement-mode z The electrodes are isolated from case Specifications: part no. MG500Q1US21 Manufacturer TOSHIBA supply ability ...

Mega Source Elec.Limited
China

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IGBT Power Module MG600Q1US51 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: High input impedance z High speed : tf = 0.3µs (max) @Inductive load z Low saturation vo...

Mega Source Elec.Limited
China

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