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...transistor designed for general-purpose applications. It offers excellent hFE linearity and low noise characteristics, making it complementary to the A733 transistor. This transistor is suitable for various ...
... Effect Transistor / High Frequency Mosfet Field Effect Transistor Feature 40V/250A R DS(ON) = m(typ.) @ V GS =10V 100% avalanche tested Reliableand Rugged Lead FreeandGreenDevicesAvailable (RoHSCompliant)...
...Transistor With Low On State Resistance Mos Field Effect Transistor Feature -60V/-40A R DS(ON) = 19mΩ(typ.)@V GS = -10V R DS(ON) = 25mΩ(typ.)@V GS = -4.5V 100% avalanche tested Reliable and Rugged Halogen Fr...
....5V 100% Avalanche Tested Reliable and Rugged Halogen Free and Green Devices Available (RoHS Compliant) High Current Transistor Applications Power Management for DC/DC Switching application Ordering and Mark...
...Transistor N Channel MOSFET 40V 60V OptiMOS-T2 Power-Transistor Features • Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Gr...
....5V 100% Avalanche Tested Reliable and Rugged Halogen Free and Green Devices Available (RoHS Compliant) High Current Transistor Applications Power Management for DC/DC Switching application Ordering and Mark...
... Effect Transistor / High Frequency Mosfet Field Effect Transistor Feature 40V/250A R DS(ON) = m(typ.) @ V GS =10V 100% avalanche tested Reliableand Rugged Lead FreeandGreenDevicesAvailable (RoHSCompliant)...
...Transistor With Low On State Resistance Mos Field Effect Transistor Feature -60V/-40A R DS(ON) = 19mΩ(typ.)@V GS = -10V R DS(ON) = 25mΩ(typ.)@V GS = -4.5V 100% avalanche tested Reliable and Rugged Halogen Fr...
...Transistor N Channel MOSFET 40V 60V OptiMOS-T2 Power-Transistor Features • Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Gr...
Product Detail 1. Stock,Order goods or Manufacturing welcome. 2. Sample order. 3. We will reply you for your inquiry in 24 hours. 4. After sending, we will track the products for you once every two days, until ...
...transistor designed with excellent hFE linearity, making it a complementary component to the S9013T. This transistor is suitable for various electronic applications requiring reliable performance. Product At...
...transistor featuring high DC current gain (hFE=200 Typ) at VCE=6V, IC=1mA and high voltage capability with a VCEO of 50V. This transistor is housed in a plastic surface-mounted SOT-323 package with 3 leads. ...
...transistor (PNP+PNP) designed for low power amplification and switching applications. It features epitaxial planar die construction and is suitable for various electronic circuits requiring PNP transistor fu...
...transistor in a SOT-23 plastic-encapsulated package, designed for use as a driver transistor. It offers specific voltage and current ratings suitable for various electronic applications. Product Attributes P...
...transistor designed for general-purpose applications. It is complementary to the S9013 and features excellent hFE linearity. This transistor is housed in a plastic surface-mounted SOT-23 package with 3 leads...
...TRANSISTOR (NPN) The MMBT3904 is an NPN transistor designed for general-purpose applications. It is complementary to the MMBT3906 and offers a range of electrical characteristics suitable for various electro...
...Transistor The S9018 is an NPN silicon general-purpose transistor designed for AM/FM amplifier and local oscillator applications in FM/VHF tuners. It offers high current gain and a significant bandwidth prod...
....Product Attributes Marking: 2LTechnical Specifications Parameter Symbol Test Conditions Min Typ Max Unit Maximum Ratings VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter ......
...transistor in a SOT-23 plastic-encapsulated package. It is complementary to the S9015 transistor and is designed for general-purpose applications.Product Attributes Brand: High Diode Semiconductor Package: S...
...TRANSISTOR (NPN) The HPBU406 is a high-voltage NPN transistor designed for applications requiring fast switching speeds and low saturation voltage. It features a maximum switching time (tf) of 750 ns and a l...