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...transistor designed for medium power amplification and switching applications. It features a small surface mount package, making it ideal for compact electronic designs. This transistor is complementary to t...
...Transistor ideally suited for automatic insertion. It features a complementary NPN type available (BC817). This device is designed for various electronic applications requiring reliable transistor performanc...
...-89 package. Product Attributes Transistor Type: NPN Package Type: SOT-89 Lead-free: Yes Technical Specifications Parameter Symbol Test Conditions Min Typ Max Unit MAXIMUM RATING @ Ta=25 Collector-Base Volta...
...transistor designed for general-purpose applications. It features high DC current gain and is complementary to the 2SB624. This transistor is suitable for various electronic circuits requiring amplification ...
...transistor offers high current capability with a low VCE(sat) of 250mV at IC = 200mA / IB = 10mA. It is suitable for applications requiring efficient power handling and low voltage drop. The transistor is av...
...transistors designed for high current applications with a maximum rating of 1 A and low voltage capabilities up to 80 V. These transistors are suitable for various electronic circuits requiring reliable curr...
...transistors designed for high current applications with a maximum rating of 1 A and low voltage capability up to 80 V. These transistors are suitable for general-purpose use and offer reliable performance in...
...transistor designed for general-purpose applications. It features low VCE(sat) of -0.5V (Typ.) at IC/IB = -2A / -0.2A, making it suitable for applications requiring efficient power handling. This transistor ...
...transistor designed for general-purpose applications. It offers high collector current capabilities and serves as a complementary part to the SS8050. This transistor is suitable for various electronic circui...
...Transistor 500W, 50V, 175MHz N-Channel Broadband MOSFET replacement for BLF278 Features 1, Guaranteed Performance at 175 MHz, 50 V 2, Output Power — 300 W • Gain — 14 dB (16 dB Typ) 3, Efficiency — 50% • Low...
...Transistors FETs MOSFETs Single P-CH 20V 9A 8WDFN P-Channel Products Description: 1. -20V,-15A,6.7 Mω, P-channel power MOSFET 2. P-channel 20V 9A (Ta) 840mW (Ta) Surface Mount 8-wdfn (3.3x3.3) 3. Trans MOSFE...
...: Surface Mount, 4-Lead SOT-363 Applications: - Cellular and PCS - 2.5G/3G/4G Base Stations - WLAN/WiMAX - Test Equipment - Broadband Communications - High Dynamic Range Applications Why buy from us >>> Fast...
...Transistor 500W, 50V, 175MHz N-Channel Broadband MOSFET replacement for BLF278 Features 1, Guaranteed Performance at 175 MHz, 50 V 2, Output Power — 300 W • Gain — 14 dB (16 dB Typ) 3, Efficiency — 50% • Low...
...Test Machine Used In The Electrical , Electronic , Diodes , LCD Description: Steam aging tester is used to test and determine the parameters, performance of electrical, electronics, other products and materi...
...TRANSISTORS Description: Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Powe...
...TRANSISTOR NPN SILICON Description: …designed for VHK/UHF power amplifier applications.This device is optimized for rugged performance in 225-400MHz communications equipment. Applications: Performance @400MH...
...tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for app...
...100% avalanche tested • Improved dv/dt capability • TO-220F package isolation = 4.0kV (Note 6) General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild...
... Low Crss ( Typ. 10pF) • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capability • ESD Improved Capability • RoHS compliant Description These N-Channel enhancement mode power field effect transist...
...Transistor STO33N60M6 MOSFET N-channel 600 V, 105 mOhm typ., 26 A Feature • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100% avalanche tested • Zene...