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...transistor designed for applications requiring high voltage. It is complementary to the LMBTA94LT1G.Product Attributes Brand: LESHAN RADIO COMPANY, LTD. Material Compliance: RoHS requirements Device Marking:...
...transistor is designed for high voltage applications and offers a large continuous collector current capability. It is suitable for various electronic circuits requiring robust performance and reliability. P...
... Attributes Package Type: SOT-89 Lead Options: Lead Free, Halogen Free ('G') Technical Specifications Parameter Symbol Test Conditions Min Max Unit Collector-Base Voltage VCBO @ Ta=25 unless otherwise specif...
... PNP Darlington Power Transistor designed for general purpose amplifier and low speed switching applications. It features a low collector-emitter saturation voltage, high DC current gain, and is 100% avalanc...
...transistor designed for high-voltage switching applications. It features high breakdown voltage, large current capacity, and fast switching times, making it suitable for high-density, small-sized hybrid ICs....
...transistor is designed for surface mount applications, offering high DC current gain. It is suitable for various electronic circuits requiring efficient amplification and switching capabilities. Product Attr...
...Transistor designed for power amplifier and power switching applications. It features low saturation voltage (VCE(SAT)= 0.5V Max.) and high-speed switching time (TSTG=1.0s Typ.).Product Attributes Brand: UNI...
...transistor designed for low-frequency amplifier applications. It offers reliable performance with clearly defined electrical characteristics and absolute maximum ratings. Product Attributes Brand: Toshiba Co...
...transistor designed for power applications. It offers high breakdown voltage, high current gain, and high switching speed, making it suitable for various switching applications.Product Attributes Brand: UNIS...
...: UNISONIC TECHNOLOGIES CO., LTD Material: Silicon Type: NPN Epitaxial Silicon TransistorTechnical Specifications Parameter Symbol 2SD1616 2SD1616A Unit Test Conditions Min Typ Max Collector to Base Voltage ...
... transistor in a TO-92 plastic-encapsulated package, designed for general-purpose applications. It features excellent hFE linearity.Product Attributes Material: Plastic-Encapsulate Type: PNP TransistorsTechn...
...transistor featuring an epitaxial planar die construction. It is designed for a wide operating and storage temperature range of -55 to 150 and is RoHS compliant and Green EMC. This device includes built-in b...
...transistor in a single package, combining AD-DTA114E (PNP) and AD-DTC114E (NPN) chips. It is ideal for power switch circuits and is AEC-Q101 qualified.Product Attributes Brand: JIANGSU CHANGJING ELECTRONICS ...
...transistor (NPN+PNP) featuring built-in resistors. It integrates AD-DTA114Y and AD-DTC114Y series chips into a single package and is AEC-Q101 qualified, making it suitable for automotive applications.Product...
...transistor (PNP+PNP) featuring two DTA143Z chips integrated into a single package. This integration significantly reduces mounting costs and board space. It is designed for applications requiring built-in re...
...transistor package containing two DTA123J chips. It features built-in resistors for simplified circuit design and is suitable for applications requiring PNP+PNP configurations. Marking: A5.Product Attributes...
SMP100LC-35 SMB Transient Suppression Diode (TVS) SMP100LC-35 SMP100LC-35 Description The SMP100LC is a series of low capacitance transient surge arrestors designed for the protection of high data rate communic...
...Transistors Mosfet Semiconductor MJ15025G PNP − MJ15023, MJ15025* Silicon Power Transistors The MJ15023 and MJ15025 are PowerBase power transistors designed for high power audio, disk head positioners and ot...
LCR-T7 Multifunction Tester Mul Transistor TFT Diode Capacitance Meter LCR ESR Meter Product Description: This is a cost-efective and widely used transistor detector. (an be used to detect NPN and PNP transisto...
Quick Detail: MRF134 - Motorola, Inc - N-CHANNEL MOS BROADBAND RF POWER FET Description: .designed for wideband largesignal amplifier and oscillator applications up to 400 MHz range. Guaranteed 28 Volt, 150...