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Product Overview The BFQ790 is a high-linearity, high-gain driver amplifier designed for RF applications. Built on NPN silicon germanium technology, it offers excellent performance characteristics suitable for ...
...Transistors TO-3PN Through Hole Product Description Of FGA40N65SMD FGA40N65SMD is 650V, 40A Field Stop IGBT Transistors. The Package is TO-3PN. Positive Temperature Co-efficient for Easy Parallel Operating....
... Field Stop 650V Through Hole Transistors Product Description Of AFGHL30T65RQDN AFGHL30T65RQDN is IGBT transistors 650V/30A FS4 SCR IGBT T0247-3L Automotive. Specification Of AFGHL30T65RQDN Part Number: AFGH...
... with Diode, Through Hole. Specification Of IXYH16N250CV1HV Part Number IXYH16N250CV1HV Td (on/off) @ 25°C 14ns/260ns Test Condition 1250V, 16A, 10Ohm, 15V Reverse Recovery Time (trr) 19 ns Operating Tempera...
...tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for app...
...Transistors Mosfet Semiconductor MJ15025G PNP − MJ15023, MJ15025* Silicon Power Transistors The MJ15023 and MJ15025 are PowerBase power transistors designed for high power audio, disk head positioners and ot...
2000 Counts NCV Frequency Backlight Temperature Transistor Smart Mini Digital Multimeter Features of Smart Digital Multimeter NCV, Continuity test Non-contact Voltage Detection Non-contact voltage induction zo...
..., etc., which can be comprehensively inspected for electrical parameters and functional integrity. Electronic Components: Such as resistors, capacitors, inductors, transistors, integrated circuits, etc., whi...
...°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 180 V, IE = 0 ― ― 5.0 μA Emitter cut-off current IEBO ......
Integrated Circuit Chip NTMFS4C55NT1G NTMFS4C55 MOSFET Transistor DFN5 Features Pulse Test: pulse width300 us, duty cycle2%. Switching characteristics are independent of operating junction temperatures. Surfa...
... reliability and low EMI. Specification Of AFGY120T65SPD Part Number AFGY120T65SPD Gate Charge 125 nC Td (on/off) @ 25°C 40ns/80ns Test Condition 400V, 120A, 5Ohm,...
... technology. Specification Of AFGHL50T65SQDC Part Number: AFGHL50T65SQDC Current - Collector (Ic) - Max: 80 A Operating Temperature(Min): -55°C (TJ) Test Condition: 400V, 50A, 4.7Ohm, 15V Operating Temperatu...
... IPDQ60R040S7A Product Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage 600 V Test circuit for diode characteristics Of...
... W Switching Energy 880µJ (on), 490µJ (off) Input Type Standard Gate Charge 80 nC Td (on/off) @ 25°C 18ns/75ns Test Condition 400V, 40A, 6Ohm,...
IRLR2905ZTRPBF MOSFET Power Transistor High Performance Low On Resistance Fast Switching Features: • Logic Level Gate Drive, 4.5V to 20V • Low On-Resistance RDS(on) • 100% UIL Tested • RoHS Compliant • Halogen ...
...Transistors TO-247-3 Package Product Description Of IXYH85N120C4 IXYH85N120C4 is ideal for applications such as inrush current protection circuits, lamp ballasts, solar inverters and many more. Specification...
...Transistors Surface Mount IXYA20N120A4HV TO-263-3 IC Chip Product Description Of IXYA20N120A4HV IXYA20N120A4HV devices feature reduced thermal resistance, low energy losses, fast switching, low tail current,...
..., making them ideal for snubber-less hard-switching applications. Specification Of IXYH55N120A4 Part Number IXYH55N120A4 Test Condition 600V, 40A, 5Ohm, 15V Reverse Recovery Time (trr) 35 ns Operating Temper...
..., Switching High-speed switching diodes This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and ...
...Transistor MOSFET MOSFET; -80V P-Chan PowerTrench Features MaxrDS(on) =183mΩatVGS =-10V,ID =-2.1A MaxrDS(on) =233mΩatVGS =-4.5V,ID =-1.9A High performance trench technology for extremely low rDS(on) High pow...