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...gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Shenzhen Canyi Electronics Technology Co., Ltd. was established in 2000. After more than ten years of de...
MXN3312 Field Effect Transistor Dual N - Channel Enhancement Mode Power Mosfet Product Description The MXN3312 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It ca...
... 6][charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =70A RDS(ON) < 5.5mΩ VGS=1...
... effect Transistor MOSFET SMD N-Channel with Load switch Description The AP85N03NF uses advanced trench technology to provide excellent R DS(ON) low gate charge and operation with gate voltages as low as 4.5...
...effect high voltage transistor AP50P03NF.pdf Description The AP50P03NF uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gate voltages as low as 4.5V. This de...
...power field effect transistor AP60N03DF.pdf Description The AP60N03DF uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gate voltages as low as 4.5V. This dev...
Transistor IRLR7843TRPBF TO-252 30V 161A Power MOSFET for Telecom and Industrial Use IRLR7843PbF IRLU7843PbF Description Power MOSFET Selection for Non-Isolated DC/DC Converters Absolute Maximum Ratings Paramet...
...135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and ...
... switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in...
Transistor MOSFET N channel 30A 200V 75MOHM 10V MOS tube IRFP250NPBF Products Description: 1.IRFP250NPBF transistor, MOSFET, N channel, 30 A, 200 V, 75 MoHM, 10 V, 4 V 2.The to-247 package is preferred for Comm...
Fgh60n60sfd Igbt Power Transistor 60a 600v To247 Igbt Transistors Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 2nd generation IGBTs offer the optimum ......
SI4438-B1C-FMR RF Power Transistor Product Overview: The SI4438-B1C-FMR is a high-performance RF power transistor designed for use in a wide range of applications, including base stations, portable radios, and ...
SI4432-B1-FMR RF Power Transistor Description: The SI4432-B1-FMR is a RF power transistor designed for use in high power, broadband applications such as cellular, Wi-Fi, and other wireless communication systems...
... Listing: AD8364ACPZ-REEL7 RF Power Transistors Description: The AD8364ACPZ-REEL7 is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) RF power transistor designed for use in cellular ...
Product: ADL5350ACPZ-R7 RF Power Transistors Description: The ADL5350ACPZ-R7 is an RF power transistor for use in cellular and wireless base station, industrial, scientific and medical (ISM) applications. Featu...
... applications. This device offers excellent linearity and efficiency, and is capable of delivering up to 17 dB gain and 50 W of output power. It is ideal for use in broadband power amplification applications...
AD8351ARMZ-REEL7 RF Power Transistor Product Description: The AD8351ARMZ-REEL7 is an advanced silicon bipolar power transistor specifically designed for use in RF power amplifiers applications. It is a high per...
HMC788ALP2ETR, RF Power Transistor Description: The HMC788ALP2ETR is a GaN on Silicon Carbide (SiC) RF power transistor that is designed for use in high power, wideband communication systems. It operates over t...
AD9361BBCZ RF Power Transistor - High Power High Reliability The AD9361BBCZ is a high-power, high-efficiency N-channel RF power transistor designed for use in the 900 MHz ISM band. The device features a wide ga...
...135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and ...