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...Transistor 30P03X TO-252 Standard Size Mosfet Power Transistor Description The 30P03X uses advanced trench technology and design to provide excellent RDS(ON) with low gatecharge. It can be used in a wide var...
...Transistor For Motor Control 30A 100V TO-220 Mosfet Power Transistor Description: The AP30N10P uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages a...
...Transistor 2A 600V Circuit Switching For LED Drive Mosfet Power Transistor Description The AP50N20D uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFET...
...Transistor 30P03X TO-252 Standard Size Mosfet Power Transistor Description The 30P03X uses advanced trench technology and design to provide excellent RDS(ON) with low gatecharge. It can be used in a wide var...
...Transistor For Motor Control 30A 100V TO-220 Mosfet Power Transistor Description: The AP30N10P uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages a...
...) technology. The resulting transistor shows good gain linearity behaviour. Features - High breakdown voltage VCEO = 140 V - Typical ft = 20 MHz - Fully characterized at 125 oC Product Category: Bipolar Tran...
...transistor TO-220F MOS FET N-Channel transistor Original Package Features: 1.6A, 600V, RDS(on) = 4.7Ω @VGS = 10 V Low gate charge ( typical 9.0 nC) Low Crss ( typical 5.0 pF) Fast switching 100% avalanche te...
...maximum voltage rating of 60 volts and current rating of 28 amperes. It is commonly used in power supply circuits and other switching applications. Specification item value Model Number WSF28N06 Type Bipolar...
FGH40N60SFD Igbt Transistors 600V 40A Field Stop Transistor TO-247-3 290W Description Using Novel Field Stop IGBT Technology, ON Semiconductor’s new series of Field Stop IGBTs offer the optimum performance for ...
SI4463-C2A-GMR RF Power Transistors Product Description: The SI4463-C2A-GMR RF Power Transistors are designed for use in high-efficiency, high-power wireless applications. These transistors are capable of produ...
HMC326MS8GETR RF Power Transistor - High Power High Linearity HMC326MS8GETR, GaAs pHEMT, RF Power Transistor Product Description: The HMC326MS8GETR is a high-performance, GaAs pHEMT, RF power transistor. It is ...
..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 ...
..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 ...
..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 ...
..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 ...
...Transistor General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to m...
... Switching Product Summary The G40N10 uses advanced Plane technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Batter...
...Transistor For Load Switch Power Management Mosfet Power Transistor DESCRIPTION The 50P03NF uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gate voltages as...
...Transistor AP10N10DY For Switching Power Supplies Mosfet Power Transistor Description: The AP10N10D/Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be u...
...Switch Transistor , Original Silicon Power Transistor General Description: The AP12N10D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low a...