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...-side IGBTs, short circuit protection, temperature sensor output, under-voltage protection, and a fault signal output. The input interface supports TTL (3.3V/5V) with active high logic. This module is ideal ...
6MBP50XTC065-50 IGBT Modules The 6MBP50XTC065-50 is an IGBT Module from the X series, designed for AC 100~240V three-phase inverter drives for small power AC motor applications. It features separate emitter typ...
...IGBT The Fuji Electric FGW40N120WD is a high-speed Discrete IGBT from the W series, designed for demanding applications requiring low power loss, reduced switching surge and noise, and high reliability. Its ...
6MBP30XSF060-50 IGBT Modules The 6MBP30XSF060-50 is an IGBT Module from the X series, designed for 600V and 30A applications. It features separate emitter type low-side IGBTs, short circuit protection, temperat...
...IGBT The IXYT25N250CHV and IXYH25N250CHV are high voltage XPTTM IGBTs designed for high power density applications. They offer high blocking voltage, high peak current capability, and low saturation voltage,...
...FGH75T65SQDT is a 650 V, 75 A Field Stop Trench IGBT from ON Semiconductor. Leveraging novel field stop IGBT technology, this 4th generation IGBT offers optimal performance for applications requiring low con...
FGA40T65SHD 650 V, 40 A Field Stop Trench IGBT Leveraging novel field stop IGBT technology, this 3rd generation IGBT offers optimized performance for applications such as solar inverters, UPS, welders, telecom,...
FGH40N60UFD IGBT - Field Stop 600 V, 40 A Utilizing novel Field Stop IGBT technology, ON Semiconductor's field stop IGBTs deliver optimal performance for applications such as solar inverters, UPS, welders, micr...
Product Overview The AOK40B120N1 is a high-performance IGBT module featuring the latest Alpha IGBT (IGBT) technology. It offers a 1200V collector-emitter voltage and a continuous collector current of 40A (TC=10...
... the FGA25N120ANT might just be what you need. This high-performance switching device is designed to handle high voltage and high current applications with ease, making it perfect for power electronics proje...
...IGBT) power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power supplies (UPS) and general i...
17 mm IGBT drive series parallel application, there are two parallel module model and three modules in parallel driven plate model, can choose fiber control and electrical control, nearly equal length gate wiri...
...IGBT IPM 600V 30A 27-PWRDIP MODULE FSBB30CH60C Power Driver Module 3 Phase 600 V 30 A 27-PowerDIP Module (1.205", 30.60mm) FSBB30 IGBT Applications: Motion Control - Home Appliance / Industrial Motor Su...
... for AC-switch applications in UPS and PCS systems.Product Attributes Brand: Fuji Electric Model: 2MBI100VA-120-50 Series: V series Weight: 180g (typ.)......
... The FGZ75XS65C is a Discrete IGBT from Fuji Electric's XS-series, designed for high reliability and ruggedness. It offers low power loss, reduced switching surge and noise, making it suitable for demanding ...
... temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. Key applications include UPS, EV-chargers, and solar string inverters.Product Attributes Brand: HUAXUANYANG HXY ELECT...
... by reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It is designed for applications requiring high reliability and efficiency, such as motor drives and onboa...
... Transistor (IGBT) designed for high-efficiency applications. It features high input impedance, low saturation voltage, and low switching losses, contributing to its rugged transient reliability. This device...
...positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is suitable for applications such as UPS, EV-Chargers, and Solar String Inverters.Product Attribu...
...IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This devic...