| Sign In | Join Free | My burrillandco.com |
|
...Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage...
...IGBT) designed for high-performance applications. It features easy paralleling capability due to a positive temperature coefficient in Vcesat, low EMI, low gate charge, and low saturation voltage. With a max...
...IGBT) designed for high-efficiency applications. It features high input impedance, low switching losses, and a low saturation voltage (VCE(SAT)). Copacked with a fast recovery diode, it offers low conduction...
Product Overview The APT70GR65B is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It features easy paralleling capability due to a positive temperature coefficient in VC...
Product Overview JIAEN Trench IGBTs offer lower losses and higher energy efficiency for applications such as motor control, general inverters, and other soft switching applications. They feature high-speed swit...
... capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. Key applications include UPS, EV-chargers, and solar string inverters.Product Attributes...
... charge, and low saturation voltage. This device is suitable for use in UPS, EV-Charger, Solar String Inverter, and Energy Storage Inverter applications.Product Attributes Brand: HUAXUANYANG HXY ELECTRONICS ...
...IGBT) from HUAXUANYANG HXY ELECTRONICS CO.,LTD. Designed for high-performance applications, this device offers easy paralleling capability due to its positive temperature coefficient in VCESAT, low EMI, low ...
...IGBT) from HUAXUANYANG HXY ELECTRONICS CO.,LTD. It offers easy paralleling capability due to a positive temperature coefficient in Vcesat, low EMI, low gate charge, and low saturation voltage. With a maximum...
Product Overview The NGTB35N65FL2WG is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It features easy paralleling capability due to a positive temperature coefficient i...
Product Overview JIAEN Trench IGBTs offer lower losses and higher energy efficiency for applications such as UPS, Motor drives, PFC, Portable power stations, and other soft switching applications. These devices...
Product Overview JIAEN Trench IGBTs offer lower losses and higher energy efficiency for applications such as motor control, general inverters, and other soft switching applications. They feature high-speed swit...
... coefficient in Vcesat, low EMI, low gate charge, and low saturation voltage. This device is suitable for applications such as UPS, EV-charging, three-phase solar string inverters, and energy storage systems...
... IGBT from JIAEN Semiconductor, designed for high-speed switching applications. It offers lower losses and higher energy efficiency, making it suitable for UPS, induction converters, uninterruptible power su...
... saturation voltage. Key features include a maximum junction temperature of 175C and suitability for UPS, EV-Charger, and Solar String Inverter applications.Product Attributes Brand:...
... (IGBT) designed for high-performance applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This dev...
... temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is suitable for demanding applications such as UPS, EV-Chargers, and Solar String Inverters.Product Attri...
Product Overview JIAEN NPT IGBTs offer lower losses and higher energy efficiency for applications such as IH (induction heating), UPS, general inverters, and other soft switching applications. This device featu...
...IGBT in a DuoPack configuration, featuring TRENCHSTOPTM technology. This technology provides a very low VCEsat, low EMI, and a very soft, fast recovery anti-parallel diode. It is designed for applications re...
...IGBT in Trench and Fieldstop technology, featuring a soft, fast recovery anti-parallel diode. This third-generation device offers very low VCEsat, low EMI, and a maximum junction temperature of 175C. It is q...