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IKW40N65WR5 Reverse-Conducting IGBT With Monolithic Body Diode TO-247-3 Package Product Description Of IKW40N65WR5 IKW40N65WR5 is a IGBT Trench 650 V 80 A 230 W Through Hole PG-TO247-3. Product Attributes Of IK...
IGBT Modules FS770R08A6P2LB 750V 450A Trench Field Stop Three Phase Inverter Product Description Of FS770R08A6P2LB FS770R08A6P2LB has benchmark current density combined with short circuit ruggedness and increas...
Transistors FGHL40T65MQDT IGBT Trench Field Stop 650V 60A 23 W Through Hole TO-247-3 Product Description Of FGHL40T65MQDT FGHL40T65MQDT Field stop 4th generation mid speed IGBT technology copacked with full rat...
FGL60N100BNTD IGBT NPT and Trench 1000V 60A 180W Through Hole TO-264-3 Features • High Speed Switching • Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60A • High Input Impedance • Built-in Fast Recovery Diod...
...IGBT Ultra-Low Loss 175℃ Tj for Servo Drives & Frequency Inverters 7th Gen NX IGBT with ultra-low loss and 175℃ maximum junction temperature, specially designed for servo drives and frequency inverters, impr...
... coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. With a maximum junction temperature of 175C, this device is suitable for UPS, EV-Chargers, and Solar String Inverters.......
... capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is suitable for use in UPS, EV-Chargers, and Solar String Inverters.Product ...
... coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. Its maximum junction temperature is 175C.Product Attributes Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD Model: ......
... gate field stop IGBTs with square RBSOA. The modules feature HEXFRED® low Qrr, low switching energy, and positive VCE(on) temperature coefficient. The devices also have a copper baseplate, low stray inducta...
STGWA60H65DFB Transistors IGBT Chip N-CH 650V 80A 375000mW 3-Pin(3+Tab) TO-247 Tube General Description : These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These ...
STGWA60H65DFB Transistors IGBT Chip N-CH 650V 80A 375000mW 3-Pin(3+Tab) TO-247 Tube General Description : These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These ...
Product Attribute Attribute Value Select Attribute Manufacturer: Infineon Product Category: IGBT Modules RoHS: Details Product: IGBT Silicon Modules Configuration: Dual Collector- Emitter Voltage VCEO Max: 1200...
Product Attribute Attribute Value Select Attribute Manufacturer: Infineon Product Category: IGBT Modules RoHS: Details Product: IGBT Silicon Modules Configuration: Dual Collector- Emitter Voltage VCEO Max: 1200...
...Gate Array XC7A75T-1FGG484I 115mA Integrated Circuit Chip 484-FBGA Product Description Of XC7A75T-1FGG484I XC7A75T-1FGG484I is Embedded - FPGAs (Field Programmable Gate Array), The -2L devices can operate a...
IC Integrated Circuits TPSI3050DWZR SO-MOD-8 Relays Specifications Product Attribute Attribute Value Manufacturer: Texas Instruments Product Category: Isolated Gate Drivers Brand: Texas Instruments Fall Time: 5...
IC Integrated Circuits NCD57540DWKR2G SOIC-16 PMIC - Power Management ICs Specifications Product Attribute Attribute Value Manufacturer: onsemi Product Category: Isolated Gate Drivers RoHS: Details Brand: onsem...
IC Integrated Circuits NCD57530DWKR2G SOIC-16 PMIC - Power Management ICs Specifications Product Attribute Attribute Value Manufacturer: onsemi Product Category: Isolated Gate Drivers RoHS: Details Brand: onsem...