| Sign In | Join Free | My burrillandco.com |
|
...Designs IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 75A Current - Collector Pulsed (Icm) 240A Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 30A Power - Max 463W Switchin...
...Designs IGBT Type PT Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 100A Current - Collector Pulsed (Icm) 160A Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 40A Power - Max 543W Switch...
...IGBT from Infineon's TRENCHSTOPTM 5 technology, copacked with a RAPID 1 fast and soft antiparallel diode. It offers best-in-class efficiency in hard switching and resonant topologies, serving as a plug-and-p...
...Gate Bipolar Transistor (IGBT) from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD, utilizing their second-generation Trench and Field Stop (FS) structure. It offers a 1200V breakdown voltage, low Vce(sat...
...VBE16I07 is a 600V Trench and Fieldstop IGBT designed for high-speed switching applications. It features very low VCEsat, low turn-off losses, ultra-low gate charge (Qg), and is avalanche energy rated (UIS)....
...IGBT with an integrated diode, designed for high-performance applications. It leverages the latest AlphaIGBT ( IGBT) technology, offering low turn-off switching loss due to fast turn-off times and very smoot...
...designed with a unique cascode circuit configuration. This configuration pairs a normally-on SiC JFET with a Si MOSFET to create a normally-off SiC FET device. Its standard gate-drive characteristics enable ...
...IGBT Module (V series) from Fuji Electric, designed for high-power applications. It features a compact P.C.Board mount package and integrates an Inverter, Converter Diode Bridge, and Dynamic Brake Circuit. T...
... circuit withstand time of 5s. This IGBT utilizes TRENCHSTOP and Fieldstop technology, offering very tight parameter distribution, high ruggedness, and temperature-stable behavior. It also boasts low ......
...Bridge in One-Package IGBT Module The LGM40HF120S2F2A is a 1200V/40A Half Bridge IGBT module designed for high-power applications. It features low switching losses, low VCEsat with a positive temperature coe...
...IGBT Modules The MIP25R12E1TN is a 1200V, 25A IGBT module designed for various power electronics applications. It features low switching losses, low Vce(sat) with a positive temperature coefficient, and incl...
... parameter distribution, high ruggedness, and stable temperature behavior. Key advantages include a short circuit withstand time of 10s, low VCE(SAT), and easy parallel switching capability due to a positive...
...IGBT designed for high reliability and performance. It features Trench-Stop Technology for high-speed switching, enhanced ruggedness, and a short circuit withstand time of 10s. Its low VCEsat and easy parall...
IRGB4620D 650V / 15A Trench Field Stop IGBT The IRGB4620D is a 650V, 15A Trench Field Stop IGBT designed for high-reliability applications. It features a high breakdown voltage, short circuit rating, and very l...
MG300HF12LEC2 S-M292 IGBT Module The MG300HF12LEC2 S-M292 is a high-speed IGBT module featuring NPT technology, designed for high-frequency applications. It offers low switching losses, high short circuit capab...
... voltage range of 600V to 1200V, and a robust current rating of up to 630A. The module features a built-in temperature sensor and an integrated control circuit, allowing for...
...800A Half-Bridge IGBT Topology Low Vce(sat) IGBTs (Low Conduction Losses) Optimized Low Switching Losses High Short-Circuit Ruggedness (SCWT) Low-Inductance Module Design Advanced NTC Temperature Sensor High...
... environments Class II safety protection, no earth wire required 3-year worry-free warranty Triple protection against short circuit, overcurrent,...