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Total 3280 products for igbt h bridge Manufacture & Suppliers

IGBT Power Module MG600J2YS59A - TOSHIBA - TOSHIBA IGBT Module Silicon N Channel IGBT

Quick Detail: TOSHIBA IGBT Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: • Integrates a complete half bridge power circuit and fault-signa...

Mega Source Elec.Limited
China

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IGBT Power Module MG600J2YS60A- TOSHIBA - TOSHIBA IGBT Module Silicon N Channel IGBT

Quick Detail: TOSHIBA IGBT Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: • Integrates a complete half bridge power circuit and fault-signa...

Mega Source Elec.Limited
China

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3-level IGBT driver Core,Suitable for all IGBTs up to 600V/1200V/1700V, PSHI 0432

1.feature ●ASIC 3-level IGBT driver ●Suitable for all IGBTs up to 600V/1200V/1700V ●Used to drive the upper/lower bridge arm dual IGBT ●Integrated control signal timing management ●Short circuit and over curren...

BEIJING POWER-SEM ELECTRONIC TECHNIQUE CO. LTD.
Beijing,China

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igbt driver plug and play series of optical control for 17 mm IGBT module 1700 V, 600 A

17 mm IGBT module of plug and play series of optical control models, 1700 v, 600 a half bridge IGBT, has high common-mode interference ability, fiber optic cable to the top of the IGBT module, high reliability,...

BEIJING POWER-SEM ELECTRONIC TECHNIQUE CO. LTD.
Beijing,China

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Transistors MSCSM120HM063CAG Mosfet Arrays Full Bridge SiC Power Module

Transistors MSCSM120HM063CAG Mosfet Arrays Full Bridge SiC Power Module Product Description Of MSCSM120HM063CAG MSCSM120HM063CAG is a 700 V/464 A full bridge silicon carbide power module.Operates at 1.3V forwar...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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4N-Channel Mosfet Array MSCSM170HM23CT3AG Full Bridge SiC MOSFET Power Module 602W

4N-Channel Mosfet Array MSCSM170HM23CT3AG Full Bridge SiC MOSFET Power Module 602W �� Product Description Of MSCSM170HM23CT3AG MSCSM170HM23CT3AG is Full Bridge SiC MOSFET Power Module, 1700 V, 124 A silicon carb...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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IGBT DRIVER, Working frequency up to 200 KHZ high-power high voltage IGBT driver integrate

... IGBT drive;In 80 KHZ frequency drive fast 1200 v /400A half bridge IGBT module, integrated 5 kvac high pressure isolation power supply;15 w output power;And provide universal plug and play ......

BEIJING POWER-SEM ELECTRONIC TECHNIQUE CO. LTD.
Beijing,China

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GE IS200BICLH1BBA Mark VI IGBT Drive / Source Bridge Interface Board Turbine Control

...series. The IS200BICLH1BBA, part of GE's Mark VI series, serves as a Bridge Interface Board, linking the BPIA Bridge Personality Interface and Innovation Series Drive main control. It’s integral to MKVI Spee...

Sumset International Trading Co.,Ltd
Fujian,China

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Infineon IR2104STRPBF Half Bridge Driver Ic SOIC-8 Shutdown Function 600V

...-Bridge Driver with dependent high and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized ......

ShenZhen QingFengYuan Technology Co.,Ltd.
China

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SKIIP30NAB12T49 IGBT Power Moudle

SKIIP30NAB12T49 is a 3-phase bridge rectifier + braking chopper + 3-phase bridge inverter Quality control Mega Source Elec. Limited offers 90 days warranty and are strict to ISO9001:2008 QMS to reduce your purc...

Mega Source Elec.Limited
China

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FP50R12KT4_B11 Infineon Full Bridge Igbt Module AG | Emitter Controlled 4 Diode

IGBT power modules FP50R12KT4_B11 Infineon Technologies AG | Emitter Controlled 4 diode Typical Applications �� Auxiliary Inverters �� Motor Drives �� Servo Drives Electrical Features �� Low SwitchingLosses �� Tvj o...

OUTER ELECTRONIC TECHNOLOGY (HK) LIMITED
Guangdong,China

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400A Automotive IGBT Modules 1200V Sic Mosfet Module FS03MR12A6MA1LBBPSA1

... 1200V, optimized for electric drive train applications. Product Attributes Product Status Active FET Type 6 N-Channel (3-Phase Bridge) FET Feature Silicon Carbide (SiC)...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Automotive IGBT Modules FS03MR12A6MA1LB Mosfet Array 1.2kV 400A 20mW Chassis Mount

... Of FS03MR12A6MA1LB Part Number: FS03MR12A6MA1B Series: HybridPACK™ Technology: Silicon Carbide (SiC) Configuration: 6 N-Channel (3-Phase Bridge) Drain To Source Voltage (Vdss): 1200V (1.2kV) Current - Conti...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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FP75R12N2T7BPSA2 1200V 75A 20mW Trench Field Stop Transistors IGBT Modules

...IGBT Modules Product Description Of FP75R12N2T7BPSA2 FP75R12N2T7BPSA2 include three-level applications, motor drives, solar applications, and UPS systems in EasyPACK™ modules. Specification Of FP75R12N2T7BP...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Automotive IGBT Modules FP15R12KE3GBPSA1 1200V 25A Transistors Chassis Mount

...IGBT Modules FP15R12KE3GBPSA1 1200V 25A Transistors Chassis Mount Product Description Of FP15R12KE3GBPSA1 FP15R12KE3GBPSA1 Module features a trench/fieldstop IGBT4 and four emitter-controlled diodes with Pre...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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2N-Channel FF3MR12KM1HOSA1 Automotive IGBT Modules 1200V Mosfet Array Module

2N-Channel FF3MR12KM1HOSA1 Automotive IGBT Modules 1200V Mosfet Array Module�� Product Description Of FF3MR12KM1HOSA1 FF3MR12KM1HOSA1 is 62 mm 1200 V, 2 m �� half bridge module using CoolSiC �� MOSFET chip. ��Speci...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Automotive IGBT Modules FF6MR12KM1PHOSA1 1200V CoolSiC MOSFET 2N-Channel Module

...-applied Thermal Interface Material. Specification Of FF6MR12KM1PHOSA1 Part Number FF6MR12KM1PHOSA1 Configuration 2 N-Channel (Half Bridge) Drain to Source Voltage (Vdss) 1200V (1.2kV) Current - Continuous ...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Dual 1200V CoolSiC Module FF23MR12W1M1B11BOMA1 Automotive IGBT Modules 50A 20mW

Dual 1200V CoolSiC Module FF23MR12W1M1B11BOMA1 Automotive IGBT Modules 50A 20mW Product Description Of FF23MR12W1M1B11BOMA1 FF23MR12W1M1B11BOMA1 Dual 1200V/23mΩ half bridge Module using CoolSiC ™ MOSFET, NTC t...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Automotive IGBT Modules FF2MR12W3M1HB11BPSA1 Silicon Carbide 4N-Channel Module

Automotive IGBT Modules FF2MR12W3M1HB11BPSA1 Silicon Carbide 4N-Channel Module Product Description Of FF2MR12W3M1HB11BPSA1 FF2MR12W3M1HB11BPSA1 is 1200 V/1.44 m Ω half bridge module using CoolSiC with enhanced...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Automotive IGBT Modules F415MR12W2M1B76BOMA1 Fourpack 1200V CoolSiC MOSFET Module

..., NTC, and PressFIT Contact Technology. Specification Of F415MR12W2M1B76BOMA1 Part Number F415MR12W2M1B76BOMA1 Technology Silicon Carbide (SiC) Configuration 4 N-Channel (Half Bridge) Drain to Source Voltag...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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