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Total 3280 products for igbt h bridge Manufacture & Suppliers

MSCSM120HM31CTBL2NG Automotive IGBT Modules N-Channel Mosfet Array Transistors

Automotive IGBT Modules MSCSM120HM31CTBL2NG N-Channel Mosfet Array Transistors Product Description Of MSCSM120HM31CTBL2NG MSCSM120HM31CTBL2NG device is a full bridge 1200 V/79 A silicon carbide (SiC) MOSFET pow...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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FP15R12W1T4 IGBT Power Module , Diode Bridge Module 15A Brand New Condition

FP15R12W1T4 IGBT Power Inverter Module 1200V 15A List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND �� PART NUMBER MFG/BRAND DTC143ZUAT106 ROHM �� LTC3375EUK#TRPBF LINEAR RT9011-MGGQWC RICHTEK �� L...

Shenzhen Koben Electronics Co., Ltd.
Guangdong,China

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7MBR35SB120-50 1200V/35A Seven-In-One IGBT Module Integrated Braking Circuit Built-in NTC Low VCE(sat) High Speed Switching Compact Structure Industrial Grade for AC Drives & UPS Systems

... Seven-In-One IGBT Module Integrated Braking Circuit Built-in NTC Low VCE(sat) High Speed Switching Compact Structure Industrial Grade for AC Drives & UPS Systems Features Low VcE(sat) Compact package P.C. b...

TOP Electronic Industry Co., Ltd.
China

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IGBT Power Module IRPT2061A-IR - Power Module for 1.5 hp Motor Drives

..., brake IGBT and freewheeling diode, output inverter, current sense shunts and NTC thermistor. The 3-phase input bridge rectifiers are rated at 1600V. The brake circuit uses 1200V IGBT and freewheeling diode...

Mega Source Elec.Limited
China

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IGBT Power Module MG15D4HM1 - TOSHIBA -TOSHIBA GTR Module Silicon N Channel IGBT

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low ......

Mega Source Elec.Limited
China

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IGBT Power Module MG15D6EM1 - TOSHIBA -TOSHIBA GTR Module Silicon N Channel IGBT

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low ......

Mega Source Elec.Limited
China

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IGBT Power Module MG15G1AL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low ......

Mega Source Elec.Limited
China

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IGBT Power Module MG15G1AL2 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low ......

Mega Source Elec.Limited
China

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IGBT Power Module MG15G1AL3- TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low ......

Mega Source Elec.Limited
China

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IGBT Power Module MG15G1AM1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low ......

Mega Source Elec.Limited
China

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IGBT Power Module MG15G4GM1 - TOSHIBA -TOSHIBA GTR Module Silicon N Channel IGBT

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low ......

Mega Source Elec.Limited
China

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IGBT Power Module MG15G6EL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low ......

Mega Source Elec.Limited
China

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IGBT Power Module MG15G6EL2 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low ......

Mega Source Elec.Limited
China

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IGBT Power Module MG15G6EM1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low ......

Mega Source Elec.Limited
China

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IGBT Power Module MG15H1AL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low ......

Mega Source Elec.Limited
China

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IGBT Power Module MG15H1BS1- TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low ......

Mega Source Elec.Limited
China

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IGBT Power Module MG15H6EL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low ......

Mega Source Elec.Limited
China

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IGBT Power Module MG15J6ES40 - TOSHIBA -TOSHIBA GTR Module Silicon N Channel IGBT

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low ......

Mega Source Elec.Limited
China

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IGBT Power Module MG15N6ES40 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low ......

Mega Source Elec.Limited
China

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Igbt H Bridge

Total 3280 products for igbt h bridge Manufacture & Suppliers

MSCSM120HM31CTBL2NG Automotive IGBT Modules N-Channel Mosfet Array Transistors

FP15R12W1T4 IGBT Power Module , Diode Bridge Module 15A Brand New Condition

7MBR35SB120-50 1200V/35A Seven-In-One IGBT Module Integrated Braking Circuit Built-in NTC Low VCE(sat) High Speed Switching Compact Structure Industrial Grade for AC Drives & UPS Systems

IGBT Power Module IRPT2061A-IR - Power Module for 1.5 hp Motor Drives

IGBT Power Module MG15D4HM1 - TOSHIBA -TOSHIBA GTR Module Silicon N Channel IGBT

IGBT Power Module MG15D6EM1 - TOSHIBA -TOSHIBA GTR Module Silicon N Channel IGBT

IGBT Power Module MG15G1AL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

IGBT Power Module MG15G1AL2 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

IGBT Power Module MG15G1AL3- TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

IGBT Power Module MG15G1AM1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

IGBT Power Module MG15G4GM1 - TOSHIBA -TOSHIBA GTR Module Silicon N Channel IGBT

IGBT Power Module MG15G6EL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

IGBT Power Module MG15G6EL2 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

IGBT Power Module MG15G6EM1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

IGBT Power Module MG15H1AL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

IGBT Power Module MG15H1BS1- TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

IGBT Power Module MG15H6EL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

IGBT Power Module MG15J6ES40 - TOSHIBA -TOSHIBA GTR Module Silicon N Channel IGBT

IGBT Power Module MG15N6ES40 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT