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IRF100B201 MOSFETs High Power High Efficiency Reliable Power Electronics Solutions IRF100B201 MOSFET Description: The IRF100B201 is a high-voltage, high-current MOSFET that has a drain-source breakdown voltage ...
...: -60V • Drain Current: -24A • Gate-Source Voltage: ±20V • On-Resistance: 0.045Ω • RDS(on): 0.045Ω • Input Capacitance: 488pF • Power Dissipation: 3W •...
...Power Electronics High-Performance High-Reliability Switching Solution Product Features: • N-channel MOSFET • 117A Continuous Drain Current at 25°C • 600V Drain-Source Breakdown Voltage • 4.5Ohms Maximum On-...
...Power Electronics for Automotive and Industrial Applications Product Features: - N-Channel MOSFET Transistor - Maximum Drain Source Voltage: 100V - Maximum Gate Source Voltage: ±20V - Maximum Drain Current: ...
...Power Electronics for Maximum Efficiency Product description: The IRFS4227TRLPBF is a high-performance, low-voltage, logic-level, N-channel Power MOSFET from International Rectifier. This device is suitable ...
... Voltage: ±20V - Continuous Drain Current: 15A - Drain-Source On-State Resistance: 0.06 Ohm - Gate Charge: 47nC - Power Dissipation:...
...Power Electronics for High Efficiency and Reliability The IRF7493TRPBF MOSFET is a high-performance, low-voltage power MOSFET designed for use in a wide range of consumer and automotive applications. It prov...
...Power Electronics for High Efficiency and Reliability The IRF7493TRPBF MOSFET is a high-performance, low-voltage power MOSFET designed for use in a wide range of consumer and automotive applications. It prov...
...Power Electronics High Performance Reliability for Your Applications This IRFP460APBF MOSFET is a high-performance, low-cost, power MOSFET. It features a low-threshold voltage and a high-current capability. ...
... High Performance Power Electronics Solution for Maximum Efficiency The IRFR13N20DTRPBF is a N-Channel Power MOSFET, rated at 13A, 20V and 0.019 ohm RDS(ON). It is designed for use in applications such as DC...
...Power Electronics High Voltage High Current Low On Resistance The IRFH6200TRPBF from Infineon is a single N-channel HEXFET® power MOSFET in a TO-220AB package. It is a high-side MOSFET featuring low gate cha...
... capability, and improved avalanche performance. This device is ideal for use in DC-DC converters, motor drives, relay drivers, and other high power switching applications. Features: •...
SI1308EDL-T1-GE3 MOSFET Power Electronics High Performance Low Power Consumption Product Name: SI1308EDL-T1-GE3 N-Channel Enhancement Mode MOSFET Product Description: The SI1308EDL-T1-GE3 is a N-Channel ......
... and a maximum drain current of 8A. It is designed for use in a variety of applications such as switching, power management, low-side switching, and logic level translation. Features: • Maximum drain-source ...
...Power Electronics Product Listing: IRLML0100TRPBF MOSFET Product Description: This is an N-Channel Power MOSFET designed for low voltage, high current switching applications. It is designed to be used in app...
...-Gate Voltage (Vdg): 30V - Gate-Source Voltage (Vgs): ±20V - Drain Current (Id): 8A (Tc=25℃) - Power Dissipation (Pd):...
AO6601 30V N-Channel MOSFET Power Electronics Features: - 30V N-Channel MOSFET for improved power efficiency and high current switching - Low on-resistance for low power loss - Low gate charge for improved swit...
...Power Electronics Features: - Low RDS(on) for high efficiency - Low gate charge for high switching performance - High current capability and low thermal resistance for high power handling - 100% avalanche te...
NTR5103NT1G MOSFET Power Electronics TO-236-3 Device for High Power Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain (Id) @ 25C 260...
NTR4003NT3G MOSFET Power Electronics TO-236-3 Device High Power Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous ......