Total 5466 products for igbt saturation voltage Manufacture & Suppliers

• IGBT Power Module MG300M1UK1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ... in one package. [1]Enhancement-mode [1]High speed : tf= 0.30µs (Max.) (IC = 300A) trr = 0.15µs (Max.) (IF = 300A) [1]Low saturation voltage : VCE (sat) = 2.70V (Max.) (IC = 300A) Specifications: part no....

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG300Q1US51 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ... in one package. [1]Enhancement-mode [1]High speed : tf= 0.30µs (Max.) (IC = 300A) trr = 0.15µs (Max.) (IF = 300A) [1]Low saturation voltage : VCE (sat) = 2.70V (Max.) (IC = 300A) Specifications: part no....

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG300Q2YS65H - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ... in one package. [1]Enhancement-mode [1]High speed : tf= 0.30µs (Max.) (IC = 300A) trr = 0.15µs (Max.) (IF = 300A) [1]Low saturation voltage : VCE (sat) = 2.70V (Max.) (IC = 300A) Specifications: part no....

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG400G1UL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ... in one package. [1]Enhancement-mode [1]High speed : tf = 0.30µs (Max.) (IC = 400A) trr = 0.15µs (Max.) (IF = 400A) [1]Low saturation voltage : VCE (sat) = 2.70V (Max.) (IC=400A) Specifications: part no....

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG400H1FK1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ... in one package. [1]Enhancement-mode [1]High speed : tf = 0.30µs (Max.) (IC = 400A) trr = 0.15µs (Max.) (IF = 400A) [1]Low saturation voltage : VCE (sat) = 2.70V (Max.) (IC=400A) Specifications: part no....

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG400H1FL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ... in one package. [1]Enhancement-mode [1]High speed : tf = 0.30µs (Max.) (IC = 400A) trr = 0.15µs (Max.) (IF = 400A) [1]Low saturation voltage : VCE (sat) = 2.70V (Max.) (IC=400A) Specifications: part no....

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG400J1US1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ... in one package. [1]Enhancement-mode [1]High speed : tf = 0.30µs (Max.) (IC = 400A) trr = 0.15µs (Max.) (IF = 400A) [1]Low saturation voltage : VCE (sat) = 2.70V (Max.) (IC=400A) Specifications: part no....

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG400J1US2 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ... in one package. [1]Enhancement-mode [1]High speed : tf = 0.30µs (Max.) (IC = 400A) trr = 0.15µs (Max.) (IF = 400A) [1]Low saturation voltage : VCE (sat) = 2.70V (Max.) (IC=400A) Specifications: part no....

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG400J1US11- TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ... in one package. [1]Enhancement-mode [1]High speed : tf = 0.30µs (Max.) (IC = 400A) trr = 0.15µs (Max.) (IF = 400A) [1]Low saturation voltage : VCE (sat) = 2.70V (Max.) (IC=400A) Specifications: part no....

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG400J1US21 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ... in one package. [1]Enhancement-mode [1]High speed : tf = 0.30µs (Max.) (IC = 400A) trr = 0.15µs (Max.) (IF = 400A) [1]Low saturation voltage : VCE (sat) = 2.70V (Max.) (IC=400A) Specifications: part no....

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG400J1US45 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ... in one package. [1]Enhancement-mode [1]High speed : tf = 0.30µs (Max.) (IC = 400A) trr = 0.15µs (Max.) (IF = 400A) [1]Low saturation voltage : VCE (sat) = 2.70V (Max.) (IC=400A) Specifications: part no....

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG400J1US51- TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ... in one package. [1]Enhancement-mode [1]High speed : tf = 0.30µs (Max.) (IC = 400A) trr = 0.15µs (Max.) (IF = 400A) [1]Low saturation voltage : VCE (sat) = 2.70V (Max.) (IC=400A) Specifications: part no....

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG400Q1US11 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ... GTR Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]High input impedance [1]High speed : tf= 0.5µs (Max.) trr = 0.5µs (Max.) [1]Low s...

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG400Q1US41 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ... GTR Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]High input impedance [1]High speed : tf= 0.5µs (Max.) trr = 0.5µs (Max.) [1]Low s...

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG500Q1US2 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ... (Max) trr = 0.5µs (Max) z Low saturation voltage : VCE (sat) = 4.0V (Max) z Enhancement-mode z The electrodes are isolated from case Specifications: part no. MG500Q1US2 Manufacturer TOSHIBA supply ability ....

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG500Q1US11 - TOSHIBA -TOSHIBA GTR Module Silicon N Channel IGBT

  

  ... (Max) trr = 0.5µs (Max) z Low saturation voltage : VCE (sat) = 4.0V (Max) z Enhancement-mode z The electrodes are isolated from case Specifications: part no. MG500Q1US11 Manufacturer TOSHIBA supply ability ...

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG500Q1US21 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ... (Max) trr = 0.5µs (Max) z Low saturation voltage : VCE (sat) = 4.0V (Max) z Enhancement-mode z The electrodes are isolated from case Specifications: part no. MG500Q1US21 Manufacturer TOSHIBA supply ability ...

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG600Q1US51 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ... GTR Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: High input impedance z High speed : tf = 0.3µs (max) @Inductive load z Low saturatio...

  Mega Source Elec.Limited

  China

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• IGBT Power Module MIG30J103HD - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ... GTR Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]High input impedance [1]High spee : tf = 0.35µs (max) trr = 0.15µs (max) [1]Low s...

  Mega Source Elec.Limited

  China

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• IGBT 650V 50A power transistor HXY MOSFET RGTH00TS65GC13-HXY suitable for UPS EV charger and solar inverter

  

  ...Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low satur...

  Hefei Purple Horn E-Commerce Co., Ltd.

  Anhui,China

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