Total 4703 products for igbt saturation voltage Manufacture & Suppliers

• N Series 320W IGBT Power Module 2MBI75N-060 Low Saturation Voltage

  

  2MBI75N-060 IGBT POWER DIODE MODULE 600V 75A IGBT MODULE ( N series ) n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray I...

  Shenzhen Koben Electronics Co., Ltd.

  Guangdong,China

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• 2MBI100N 060 Power Switching IGBT Power Module Low Saturation Voltage

  

  ...IGBT Power Module 2-PACK IGBT 600V 100A IGBT MODULE ( N series ) n n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray I...

  DELI ELECTRONICS TECHNOLOGY CO.,LTD

  Guangdong,China

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• MMBT5551LT1G High Voltage NPN Transistor 160V VCEO, 300mA IC Low Saturation Voltage SOT-23 Package Halogen-Free Green Material Ideal for Amplification and Switching Circuits

  

  MMBT5551LT1G High Voltage NPN Transistor 160V VCEO, 300mA IC Low Saturation Voltage SOT-23 Package Halogen-Free Green Material Ideal for Amplification & Switching Circuits Features ���S and NSV Prefix for Automot...

  TOP Electronic Industry Co., Ltd.

  China

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• 2SB1151-Y Low Collector Saturation Voltage Large Current High Power Mosfet Transistors

  

  ...SATURATION VOLTAGE LARGE CURRENT high power mosfet transistors „ FEATURES *High Power Dissipation : PD=1.5W(Ta=25℃) *Complementary to 2SD1691. „ ABSOLUTE MAXIMUM RATING (Ta=25 ) PARAMETER SYMBOL RATINGS UNIT...

  Anterwell Technology Ltd.

  Guangdong,China

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• 2SB1151-Y-BP Low Collector Saturation Voltage Large Current High Power Mosfet Transistors

  

  ...SATURATION VOLTAGE LARGE CURRENT high power mosfet transistors „ FEATURES *High Power Dissipation : PD=1.5W(Ta=25℃) *Complementary to 2SD1691. „ ABSOLUTE MAXIMUM RATING (Ta=25 ) PARAMETER SYMBOL RATINGS UNIT...

  ChongMing Group (HK) Int'l Co., Ltd

  China

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• Multifunctional Power Transistor And IGBT High Voltage 1200V 40A

  

  Product Description: High Power IGBT (Insulated Gate Bipolar Transistor) is a high power gate bipolar transistor with high current density, fast switching speed and high power capacity. It is designed to suppor...

  Reasunos Semiconductor Technology Co., Ltd.

  Guangdong,China

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• DC Argon TIG Welding Machine Arc IGBT Dual Voltage Input SANJOE

  

  ...Voltage Input DC Argon Arc IGBT TIG Welding Machine TIG315MA Features: 1, Using IGBT Single-tube inverter technology; 2, Wide-Voltage design; input volatge is 160v-560v 3, Full Bridge structure, good perform...

  Foshan Sanqiao Welding Industry Co., Ltd.

  Guangdong,China

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• SOT-89-3L B772 Tip Power Transistors Low Collector Emitter Saturation Voltage

  

  SOT-89-3L Plastic-Encapsulate Transistors B772 TRANSISTOR (NPN) FEATURE Low Speed switching Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base V...

  Shenzhen Hua Xuan Yang Electronics Co.,Ltd

  Guangdong,China

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• High input impedance Output saturation voltage MMBD1503A jcet SOT 23 Pull-down resistor

  

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  ShenZhen QingFengYuan Technology Co.,Ltd.

  China

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• IRGP4660D-EPBF IGBT Power Module - High-Performance Robust and Reliable Power Solution

  

  ... saturation voltage - High speed switching - High power cycling capability - Reverse voltage protection Specifications: - Maximum Collector-Emitter Voltage (VCES): 600V - Maximum Collector Current (IC): 100A...

  Shenzhen Sai Collie Technology Co., Ltd.

  China

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• CM450DY-24S 205G IGBT MODULE - TOP ROW 42 IGBT Modules IGBT MODULES-SERIES DUAL

  

  ...42 IGBT Modules IGBT MODULES-SERIES DUAL Manufacturer: Mitsubishi Electric Product Category: IGBT Modules RoHS: Details Product: IGBT Silicon Modules Configuration: Dual Collector- Emitter Voltage VCEO Max: ...

  Wisdtech Technology Co.,Limited

  Guangdong,China

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• CM600DX-24T Igbt Power Modules T-Series Nx Type Dual

  

  ... IGBT MODULE IGBT MODULE T-SERIES NX TYPE DUAL Manufacturer: Mitsubishi Electric Product Category: IGBT Module Products: IGBT Silicon Modules Configuration: Dual Maximum collector-emitter voltage VCEO: 1.2 k...

  Eastern Stor International Ltd.

  Guangdong,China

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• FF300R12KE4 High Power Igbt Module

  

  ...Igbt Module N-CH 1200V 460A IGBT Inverter IGBT Modules Applications Motor control and drives Uninterruptible Power Supplies (UPS) Specifications Product Attribute Attribute Value Manufacturer: Infineon Produ...

  Shenzhen Retechip Electronics Co., Ltd

  Guangdong,China

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• BSM150GB120DN2 Automotive IGBT Modules 1200V 150A Half-Bridge IGBT Power Module

  

  ...IGBT Modules 1200V 150A Half-Bridge IGBT Power Module Product Description Of BSM150GB120DN2 BSM150GB120DN2 is 1200V, 210A Half Bridge IGBT Module, Chassis Mount Module. Specification Of BSM150GB120DN2 Part N...

  ShenZhen Mingjiada Electronics Co.,Ltd.

  China

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• TO-268HV IGBT Transistor Module 3000V 38A 200W Surface Mount IXBT14N300HV

  

  ... of MOSFETs and IGBTs. These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both its saturation voltage and the forward voltage drop of its intri...

  HongKong Wei Ya Hua Electronic Technology Co.,Limited

  China

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• Ultra Fast IGBT Transistor N Channel , Insulated Gate Bipolar Transistor With Built In Diode

  

  ...IGBT Transistor N-Channel with Built in Diode 600V 40A 160W, TO-3P Descriptions: Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD ser...

  Shenzhen ATFU Electronics Technology ltd

  Guangdong,China

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• IGBT Power Module MG50J6EL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ...IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]The electrodes are isolated from case. [1]High input impedance. [1]6 IGBTs built into 1 package. [1]Enhancement...

  Mega Source Elec.Limited

  China

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• AUIRG4PH50S Infineon IGBT Transistors 1200V DC-1 KHZ (STD) DISCRETE AUTO IGBT

  

  ...IGBT Transistors 1200V DC-1 KHZ (STD) DISCRETE AUTO IGBT 1.FEATURES Standard: Optimized for minimum saturation voltage and low operating frequencies (< 1kHz) • Generation 4 IGBT design provides tighter param...

  Shenzhen Hongxinwei Technology Co., Ltd

  Guangdong,China

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• 1200V 400A N Channel 1.2KV SKM IGBT Module SKM400GB128D

  

  Product Detail Product Information Transistor Polarity: N Channel DC Collector Current: 520A Collector Emitter Saturation Voltage Vce(on):1.2kV Collector Emitter Voltage V(br)ceo:1.2kV Transistor Case Style:SEM...

  Shenzhen Quanyuantong Electronics Co., Ltd.

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• FAM65V05DF1 ONSEMI Intelligent Power Module IPM IGBT 650V 50A 27 Pin APM CAA Tube

  

  ... Hex Number of Phases Three Protection Type Short Circuit/Under Voltage Maximum Collector-Emitter Voltage (V) 650 Typical Collector Emitter Saturation Voltage (V) 1.65 Maximum Continuous Collector Current (A...

  Sunbeam Electronics (Hong Kong) Limited

  China

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