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...: 750 V Collector-emitter saturation voltage: 1.1 V Continuous collector current at 25 C: 450 A Gate-emitter leakage current: 400 nA Pd-power dissipation: 714 W ......
...: 1.2 kV Collector-emitter saturation voltage: 1.75 V Continuous collector current at 25 C: 150 A Gate-emitter leakage current: 100 nA Pd-power dissipation: ......
... SP005349909 Infineon IGBT Module MEDIUM POWER ECONO FF900R12ME7P_B11 Manufacturer: Infineon Product Type: IGBT Modules Configuration: Dual Collector-emitter maximum voltage VCEO: 1.2 kV Collector-emitter sa...
...: 1.2 kV Collector-emitter saturation voltage: 1.7 V Continuous collector current at 25 C: 1.2 kA Gate-emitter leakage current: 400 nA Pd-power dissipation: - Package / ......
... SP001779538 Infineon IGBT Module IHV IHM T XHP 3 3-6 5K FF450R33T3E3 Manufacturer: Infineon Product Type: IGBT Modules Configuration: Dual Collector-emitter maximum voltage VCEO: 3.3 kV Collector-emitter sa...
... VCEO: 1.7 kV Collector-emitter saturation voltage: 1.95 V Continuous collector current at 25 C: 300 A Gate-emitter leakage current: 400 nA Pd-power dissipation: - ......
... SP001056132 Infineon IGBT Module LOW POWER EASY F3L75R12W1H3B27BOMA1 Manufacturer: Infineon Product Type: IGBT Modules Configuration: 3-Phase Inverter Collector-emitter maximum voltage VCEO: 1.2 kV Collecto...
... SP005351618 Infineon IGBT Module LOW POWER EASY FS100R12W2T7 Manufacturer: Infineon Product Type: IGBT Modules Configuration: 6-Pack Collector-emitter maximum voltage VCEO: 1.2 kV Collector-emitter saturati...
... kV Collector-emitter saturation voltage: 2.3 V Continuous collector current at 25 C: 310 A Gate-emitter leakage current: 100 nA Pd-power dissipation: 1250 W ......
...: 1.7 kV Collector-emitter saturation voltage: 2.1 V Continuous collector current at 25 C: 1.8 kA Gate-emitter leakage current: 400 nA Pd-power dissipation: - Package / ......
...Mitsubishi Electric IGBT module Super Mini DIPIPM Version 6 6-PAC Manufacturer: Mitsubishi Electric Products: IGBT Silicon Modules Configuration: 6-Pack Maximum collector-emitter voltage VCEO: 600 V Collecto...
...IGBT Modules IGBT MODULE NFH-SERIES HI-FREQUENCY DUAL Manufacturer: Mitsubishi Electric Product Category: IGBT Modules RoHS: Details Product: IGBT Silicon Modules Configuration: Dual Collector- Emitter Volta...
...IGBT Transistors Applications • Photovoltaic inverters • High frequency converters Specifications Product Attribute Attribute Value Manufacturer: STMicroelectronics Product Category: IGBT Transistors Technol...
.../25A IGBT Module Dual Configuration Low VCE(sat) High Speed Switching Low Loss Built-in NTC Isolated Baseplate Industrial Grade for UPS & Solar Inverters Features Voltage/Current Rating: 1200 V / 25 A Config...
... Features Voltage/Current Rating: 1200 V / 50 A Configuration: Dual IGBT Low Saturation Voltage: VCE(sat) for reduced conduction losses. Low Switching Losses: Optimized for high-frequency operation. Built-in...
...Voltage/Current Rating: 1200 V / 50 A Configuration: Dual IGBT Low Saturation Voltage: VCE(sat) for reduced conduction losses. Low Switching Losses: Optimized for high-frequency operation. Built-in NTC Therm...
...Voltage/Current Rating: 1200 V / 50 A Configuration: Dual IGBT Low Saturation Voltage: VCE(sat) for reduced conduction losses. Low Switching Losses: Optimized for high-frequency operation. Built-in NTC Therm...
...IGBTs The GT40QR21 is a silicon N-Channel IGBT designed for voltage-resonant inverter switching applications. It features a 6.5th generation IGBT with a monolithically integrated freewheeling diode (RC-IGBT)...
...Specifications Product Attribute Attribute Value Product Category: IGBT Transistors Technology: Si Package / Case: TO-247-3 Collector- Emitter Voltage VCEO Max: 600 V Collector-Emitter Saturation Voltage: 1....
... • Very high frequency converters Specifications Product Category: IGBT Transistors Package / Case: TO-247-3 Collector- Emitter Voltage VCEO Max: 600 V Collector-Emitter Saturation Voltage: 1.85 V Maximum Ga...