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Igbt Saturation Voltage

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Total 4715 products for igbt saturation voltage Manufacture & Suppliers

IGBT Power Module MG300Q1US51 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... in one package. [1]Enhancement-mode [1]High speed : tf= 0.30µs (Max.) (IC = 300A) trr = 0.15µs (Max.) (IF = 300A) [1]Low saturation voltage : VCE (sat) = 2.70V (Max.) (IC = 300A) Specifications: part no....

Mega Source Elec.Limited
China

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IGBT Power Module MG300Q2YS65H - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... in one package. [1]Enhancement-mode [1]High speed : tf= 0.30µs (Max.) (IC = 300A) trr = 0.15µs (Max.) (IF = 300A) [1]Low saturation voltage : VCE (sat) = 2.70V (Max.) (IC = 300A) Specifications: part no....

Mega Source Elec.Limited
China

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IGBT Power Module MG400G1UL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... in one package. [1]Enhancement-mode [1]High speed : tf = 0.30µs (Max.) (IC = 400A) trr = 0.15µs (Max.) (IF = 400A) [1]Low saturation voltage : VCE (sat) = 2.70V (Max.) (IC=400A) Specifications: part no....

Mega Source Elec.Limited
China

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IGBT Power Module MG400H1FK1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... in one package. [1]Enhancement-mode [1]High speed : tf = 0.30µs (Max.) (IC = 400A) trr = 0.15µs (Max.) (IF = 400A) [1]Low saturation voltage : VCE (sat) = 2.70V (Max.) (IC=400A) Specifications: part no....

Mega Source Elec.Limited
China

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IGBT Power Module MG400H1FL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... in one package. [1]Enhancement-mode [1]High speed : tf = 0.30µs (Max.) (IC = 400A) trr = 0.15µs (Max.) (IF = 400A) [1]Low saturation voltage : VCE (sat) = 2.70V (Max.) (IC=400A) Specifications: part no....

Mega Source Elec.Limited
China

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IGBT Power Module MG400J1US1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... in one package. [1]Enhancement-mode [1]High speed : tf = 0.30µs (Max.) (IC = 400A) trr = 0.15µs (Max.) (IF = 400A) [1]Low saturation voltage : VCE (sat) = 2.70V (Max.) (IC=400A) Specifications: part no....

Mega Source Elec.Limited
China

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IGBT Power Module MG400J1US2 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... in one package. [1]Enhancement-mode [1]High speed : tf = 0.30µs (Max.) (IC = 400A) trr = 0.15µs (Max.) (IF = 400A) [1]Low saturation voltage : VCE (sat) = 2.70V (Max.) (IC=400A) Specifications: part no....

Mega Source Elec.Limited
China

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IGBT Power Module MG400J1US11- TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... in one package. [1]Enhancement-mode [1]High speed : tf = 0.30µs (Max.) (IC = 400A) trr = 0.15µs (Max.) (IF = 400A) [1]Low saturation voltage : VCE (sat) = 2.70V (Max.) (IC=400A) Specifications: part no....

Mega Source Elec.Limited
China

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IGBT Power Module MG400J1US21 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... in one package. [1]Enhancement-mode [1]High speed : tf = 0.30µs (Max.) (IC = 400A) trr = 0.15µs (Max.) (IF = 400A) [1]Low saturation voltage : VCE (sat) = 2.70V (Max.) (IC=400A) Specifications: part no....

Mega Source Elec.Limited
China

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IGBT Power Module MG400J1US45 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... in one package. [1]Enhancement-mode [1]High speed : tf = 0.30µs (Max.) (IC = 400A) trr = 0.15µs (Max.) (IF = 400A) [1]Low saturation voltage : VCE (sat) = 2.70V (Max.) (IC=400A) Specifications: part no....

Mega Source Elec.Limited
China

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IGBT Power Module MG400J1US51- TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... in one package. [1]Enhancement-mode [1]High speed : tf = 0.30µs (Max.) (IC = 400A) trr = 0.15µs (Max.) (IF = 400A) [1]Low saturation voltage : VCE (sat) = 2.70V (Max.) (IC=400A) Specifications: part no....

Mega Source Elec.Limited
China

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IGBT Power Module MG400Q1US11 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... GTR Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]High input impedance [1]High speed : tf= 0.5µs (Max.) trr = 0.5µs (Max.) [1]Low s...

Mega Source Elec.Limited
China

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IGBT Power Module MG400Q1US41 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... GTR Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]High input impedance [1]High speed : tf= 0.5µs (Max.) trr = 0.5µs (Max.) [1]Low s...

Mega Source Elec.Limited
China

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IGBT Power Module MG500Q1US2 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... (Max) trr = 0.5µs (Max) z Low saturation voltage : VCE (sat) = 4.0V (Max) z Enhancement-mode z The electrodes are isolated from case Specifications: part no. MG500Q1US2 Manufacturer TOSHIBA supply ability ....

Mega Source Elec.Limited
China

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IGBT Power Module MG500Q1US11 - TOSHIBA -TOSHIBA GTR Module Silicon N Channel IGBT

... (Max) trr = 0.5µs (Max) z Low saturation voltage : VCE (sat) = 4.0V (Max) z Enhancement-mode z The electrodes are isolated from case Specifications: part no. MG500Q1US11 Manufacturer TOSHIBA supply ability ...

Mega Source Elec.Limited
China

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IGBT Power Module MG500Q1US21 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... (Max) trr = 0.5µs (Max) z Low saturation voltage : VCE (sat) = 4.0V (Max) z Enhancement-mode z The electrodes are isolated from case Specifications: part no. MG500Q1US21 Manufacturer TOSHIBA supply ability ...

Mega Source Elec.Limited
China

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IGBT Power Module MG600Q1US51 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... GTR Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: High input impedance z High speed : tf = 0.3µs (max) @Inductive load z Low saturatio...

Mega Source Elec.Limited
China

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IGBT Power Module MIG30J103HD - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... GTR Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]High input impedance [1]High spee : tf = 0.35µs (max) trr = 0.15µs (max) [1]Low s...

Mega Source Elec.Limited
China

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FGA25N120ANTD TO-3P NPT Trench IGBT 25A 1200V

...IGBT 25A 1200V Features • NPT Trench Technology, Positive temperature coefficient • Low saturation voltage: VCE(sat), typ = 2.0V @ IC = 25A and TC = 25°C • Low switching loss: Eoff, typ = 0.96mJ @ IC = 25A a...

ChongMing Group (HK) Int'l Co., Ltd
China

Active Member

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AUIRG4PH50S Infineon IGBT Transistors 1200V DC-1 KHZ (STD) DISCRETE AUTO IGBT

...IGBT Transistors 1200V DC-1 KHZ (STD) DISCRETE AUTO IGBT 1.FEATURES Standard: Optimized for minimum saturation voltage and low operating frequencies (< 1kHz) • Generation 4 IGBT design provides tighter param...

Shenzhen Hongxinwei Technology Co., Ltd
Guangdong,China

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