Total 5466 products for igbt saturation voltage Manufacture & Suppliers

• IGBT Power Module MP6752 - TOSHIBA -TOSHIBA GTR Module Silicon N Channel IGBT

  

  ...Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1] The electrodes are isolated from case. [1] 6 IGBTs are built into 1 package. [1] Enhancement...

  Mega Source Elec.Limited

  China

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• IGBT Power Module MP6753- TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ... Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]The electrodes are isolated from case. [1]6 IGBTs are built into 1 package. [1]Enhancement-m...

  Mega Source Elec.Limited

  China

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• IGBT Power Module MP6754 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ... Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]The electrodes are isolated from case. [1]6 IGBTs are built into 1 package. [1]Enhancement-m...

  Mega Source Elec.Limited

  China

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• IGBT Power Module MP6755 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ... Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]The electrodes are isolated from case. [1]6 IGBTs are built into 1 package. [1]Enhancement-m...

  Mega Source Elec.Limited

  China

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• IGBT Power Module MP6759 - TOSHIBA -TOSHIBA GTR Module Silicon N Channel IGBT

  

  ... 6 IGBTs are built into 1 package. [1] Enhancement-mode [1] Low saturation voltage : VCE (sat) = 2.7 V (max) (IC = 10 A) [1] High speed: tf = 0.35 µs (max) (IC = 10 A) Specifications: part no. MP6759 Manufac...

  Mega Source Elec.Limited

  China

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• Field Stop Trench IGBT onsemi FGH75T65SHD-F155 650 Volt 75 Amp suitable for UPS and ESS systems

  

  .... It offers a positive temperature coefficient for easy parallel operation, high current capability, and low saturation voltage. This IGBT is designed for applications requiring low conduction and switching ...

  Hefei Purple Horn E-Commerce Co., Ltd.

  Anhui,China

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• IGBT transistor module onsemi FGA40T65SHD 650 volt 40 amp field stop trench technology device

  

  ...IGBT Leveraging novel field stop IGBT technology, this 3rd generation IGBT offers optimized performance for applications such as solar inverters, UPS, welders, telecom, ESS, and PFC, where low conduction and...

  Hefei Purple Horn E-Commerce Co., Ltd.

  Anhui,China

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• Field Stop IGBT onsemi FGH40N60UFDTU 600 Volt 40 Amp Optimized for UPS Telecom and Welding Power Circuits

  

  ..., ESS, and PFC. These devices are designed for scenarios requiring low conduction and switching losses, offering high current capability, low saturation voltage (VCE(sat) = 1.8 V @ IC = 40 A), high input imp...

  Hefei Purple Horn E-Commerce Co., Ltd.

  Anhui,China

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• High current insulated gate bipolar transistor HXY MOSFET IXGH50N120C3-HXY with 1200V voltage rating

  

  ...Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low sa...

  Hefei Purple Horn E-Commerce Co., Ltd.

  Anhui,China

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• High Voltage IGBT HXY MOSFET IRG7PH50K10D-EPBF-HXY for Solar Inverters and Energy Storage Solutions

  

  ... coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. Key applications include UPS, EV-Chargers, Solar String Inverters, and Energy Storage Inverters. This device features a maximum j...

  Hefei Purple Horn E-Commerce Co., Ltd.

  Anhui,China

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• High voltage HXY MOSFET NGTB35N65FL2WG HXY IGBT suitable for demanding power electronics applications

  

  ... coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. With a maximum junction temperature of 175C, this device is suitable for UPS, EV-Chargers, and Solar String Inverters.Product Att...

  Hefei Purple Horn E-Commerce Co., Ltd.

  Anhui,China

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• IGBT transistor HXY MOSFET IXXH60N65C4-HXY with 650V collector emitter voltage and 100A current rating

  

  ...IGBT) utilizing advanced Trench and Field Stop (T-FS) technology. This design enhances performance by reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It is s...

  Hefei Purple Horn E-Commerce Co., Ltd.

  Anhui,China

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• Powerful HXY MOSFET AFGHL75T65SQ-HXY IGBT with 650V Collector Emitter Voltage and 90A Collector Current

  

  ...Gate Bipolar Transistor (IGBT) offering high performance and reliability. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low satura...

  Hefei Purple Horn E-Commerce Co., Ltd.

  Anhui,China

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• high voltage IGBT HXY MOSFET APT35GP120BG-HXY suitable for EV chargers and solar power inverter systems

  

  ... Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low satu...

  Hefei Purple Horn E-Commerce Co., Ltd.

  Anhui,China

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• TO247 Package Trench IGBT JIAENSEMI JNG60T65HS1 650V 60A Collector Current Semiconductor

  

  ... current turn-off waveforms, making it ideal for motor control, general inverters, and other soft-switching applications. The device boasts a 650V voltage rating and a 60A continuous collector current, with ...

  Hefei Purple Horn E-Commerce Co., Ltd.

  Anhui,China

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• 650V IGBT transistor JSCJ CGWT80N65F2KAD with 80A collector current and trench field stop technology

  

  ...IGBT utilizing JSCJ's second-generation Trench and Field Stop (FS) structure technology. It offers high application frequency, low Collector-Emitter Saturation Voltage (Vce(sat)), and low switching loss, mak...

  Hefei Purple Horn E-Commerce Co., Ltd.

  Anhui,China

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• TO247 Package IGBT luxin-semi YGW20N65T2 650V 20A designed for soft switching and air conditioning motor drive inverter

  

  ...650V / 20A Trench Field Stop IGBTs designed for high-reliability applications. These devices feature a maximum junction temperature of 175C, high breakdown voltage, short circuit rating, and very low saturat...

  Hefei Purple Horn E-Commerce Co., Ltd.

  Anhui,China

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• power module onsemi FGH75T65SQD-F155 featuring 650 volt collector emitter voltage and positive temperature coefficient

  

  ...IGBT technology, ON Semiconductor's 4th generation IGBTs offer optimal performance for solar inverter, UPS, welder, telecom, ESS, and PFC applications. These devices are designed for low conduction and switc...

  Hefei Purple Horn E-Commerce Co., Ltd.

  Anhui,China

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• Fast Switching Field Stop Trench IGBT onsemi AFGHL50T65SQD with 650V Voltage and High Current Capability

  

  ...IGBT utilizing 4th generation high-speed technology. It is AEC Q101 qualified and offers optimal performance for both hard and soft switching topologies in automotive applications. Key advantages include its...

  Hefei Purple Horn E-Commerce Co., Ltd.

  Anhui,China

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• High Speed Switching Silicon N Channel IGBT TOSHIBA GT60M324Q with 175C Maximum Junction Temperature

  

  ... include a built-in Fast Recovery Diode (FRD), high-speed switching capabilities with a typical fall time of 0.11s, low saturation voltage of 1.70V (typ.), and a high junction temperature rating of 175C (max...

  Hefei Purple Horn E-Commerce Co., Ltd.

  Anhui,China

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