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Igbt Saturation Voltage

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Total 4715 products for igbt saturation voltage Manufacture & Suppliers

IGBT Power Module MG200J2YS45 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...IGBT Description: High Power Switching Applications Motor Control Applications Applications: The electrodes are isolated from case. z High input impedance z Includes a complete half bridge in one package. z ...

Mega Source Elec.Limited
China

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IGBT Power Module MG200M1FK1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... in one package. z Enhancement-mode z High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs (Max) (IF = 200A) z Low saturation voltage : VCE (sat) = 2.70V (Max) (IC = 200A) Specifications: part no....

Mega Source Elec.Limited
China

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IGBT Power Module MG200M1UK1- TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... in one package. z Enhancement-mode z High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs (Max) (IF = 200A) z Low saturation voltage : VCE (sat) = 2.70V (Max) (IC = 200A) Specifications: part no....

Mega Source Elec.Limited
China

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IGBT Power Module MG200N1US41 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... in one package. z Enhancement-mode z High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs (Max) (IF = 200A) z Low saturation voltage : VCE (sat) = 2.70V (Max) (IC = 200A) Specifications: part no....

Mega Source Elec.Limited
China

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IGBT Power Module MG200Q1JS8 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... in one package. z Enhancement-mode z High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs (Max) (IF = 200A) z Low saturation voltage : VCE (sat) = 2.70V (Max) (IC = 200A) Specifications: part no....

Mega Source Elec.Limited
China

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IGBT Power Module MG200Q1JS9 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... in one package. z Enhancement-mode z High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs (Max) (IF = 200A) z Low saturation voltage : VCE (sat) = 2.70V (Max) (IC = 200A) Specifications: part no....

Mega Source Elec.Limited
China

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IGBT Power Module MG200Q1US1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... in one package. z Enhancement-mode z High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs (Max) (IF = 200A) z Low saturation voltage : VCE (sat) = 2.70V (Max) (IC = 200A) Specifications: part no....

Mega Source Elec.Limited
China

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IGBT Power Module MG200Q1US51- TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... in one package. z Enhancement-mode z High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs (Max) (IF = 200A) z Low saturation voltage : VCE (sat) = 2.70V (Max) (IC = 200A) Specifications: part no....

Mega Source Elec.Limited
China

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IGBT Power Module MG300G1UL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... in one package. [1]Enhancement-mode [1]High speed : tf= 0.30µs (Max.) (IC = 300A) trr = 0.15µs (Max.) (IF = 300A) [1]Low saturation voltage : VCE (sat) = 2.70V (Max.) (IC = 300A) Specifications: part no....

Mega Source Elec.Limited
China

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IGBT Power Module MG300H1FL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... in one package. [1]Enhancement-mode [1]High speed : tf= 0.30µs (Max.) (IC = 300A) trr = 0.15µs (Max.) (IF = 300A) [1]Low saturation voltage : VCE (sat) = 2.70V (Max.) (IC = 300A) Specifications: part no....

Mega Source Elec.Limited
China

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IGBT Power Module MG300H1UL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... in one package. [1]Enhancement-mode [1]High speed : tf= 0.30µs (Max.) (IC = 300A) trr = 0.15µs (Max.) (IF = 300A) [1]Low saturation voltage : VCE (sat) = 2.70V (Max.) (IC = 300A) Specifications: part no....

Mega Source Elec.Limited
China

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IGBT Power Module MG300H1US1- TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... in one package. [1]Enhancement-mode [1]High speed : tf= 0.30µs (Max.) (IC = 300A) trr = 0.15µs (Max.) (IF = 300A) [1]Low saturation voltage : VCE (sat) = 2.70V (Max.) (IC = 300A) Specifications: part no....

Mega Source Elec.Limited
China

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IGBT Power Module MG300J1RS60 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... in one package. [1]Enhancement-mode [1]High speed : tf= 0.30µs (Max.) (IC = 300A) trr = 0.15µs (Max.) (IF = 300A) [1]Low saturation voltage : VCE (sat) = 2.70V (Max.) (IC = 300A) Specifications: part no....

Mega Source Elec.Limited
China

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IGBT Power Module MG300J1US1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... in one package. [1]Enhancement-mode [1]High speed : tf= 0.30µs (Max.) (IC = 300A) trr = 0.15µs (Max.) (IF = 300A) [1]Low saturation voltage : VCE (sat) = 2.70V (Max.) (IC = 300A) Specifications: part no....

Mega Source Elec.Limited
China

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IGBT Power Module MG300J1US11 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... in one package. [1]Enhancement-mode [1]High speed : tf= 0.30µs (Max.) (IC = 300A) trr = 0.15µs (Max.) (IF = 300A) [1]Low saturation voltage : VCE (sat) = 2.70V (Max.) (IC = 300A) Specifications: part no....

Mega Source Elec.Limited
China

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IGBT Power Module MG300J1US21 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... in one package. [1]Enhancement-mode [1]High speed : tf= 0.30µs (Max.) (IC = 300A) trr = 0.15µs (Max.) (IF = 300A) [1]Low saturation voltage : VCE (sat) = 2.70V (Max.) (IC = 300A) Specifications: part no....

Mega Source Elec.Limited
China

Verified Supplier

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IGBT Power Module MG300J1US51 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... in one package. [1]Enhancement-mode [1]High speed : tf= 0.30µs (Max.) (IC = 300A) trr = 0.15µs (Max.) (IF = 300A) [1]Low saturation voltage : VCE (sat) = 2.70V (Max.) (IC = 300A) Specifications: part no....

Mega Source Elec.Limited
China

Verified Supplier

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IGBT Power Module MG300J2YS50 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... in one package. [1]Enhancement-mode [1]High speed : tf= 0.30µs (max) (IC = 300A) trr = 0.15µs (max) (IF = 300A) [1]Low saturation voltage : VCE (sat) = 2.70V (max) (IC = 300A) Specifications: part no....

Mega Source Elec.Limited
China

Verified Supplier

Add to cart
IGBT Power Module MG300M1FK1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... in one package. [1]Enhancement-mode [1]High speed : tf= 0.30µs (Max.) (IC = 300A) trr = 0.15µs (Max.) (IF = 300A) [1]Low saturation voltage : VCE (sat) = 2.70V (Max.) (IC = 300A) Specifications: part no....

Mega Source Elec.Limited
China

Verified Supplier

Add to cart
IGBT Power Module MG300M1UK1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... in one package. [1]Enhancement-mode [1]High speed : tf= 0.30µs (Max.) (IC = 300A) trr = 0.15µs (Max.) (IF = 300A) [1]Low saturation voltage : VCE (sat) = 2.70V (Max.) (IC = 300A) Specifications: part no....

Mega Source Elec.Limited
China

Verified Supplier

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