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Igbt Saturation Voltage

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Total 4715 products for igbt saturation voltage Manufacture & Suppliers

IGBT Power Module MG50G2CL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... (Max) trr = 0.5µs (Max) z Low saturation voltage : VCE (sat) = 4.0V (Max) z Enhancement-mode z The electrodes are isolated from case Specifications: part no. MG50G2CL1 Manufacturer TOSHIBA supply ability .....

Mega Source Elec.Limited
China

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IGBT Power Module MG50G2CL2 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... (Max) trr = 0.5µs (Max) z Low saturation voltage : VCE (sat) = 4.0V (Max) z Enhancement-mode z The electrodes are isolated from case Specifications: part no. MG50G2CL2 Manufacturer TOSHIBA supply ability .....

Mega Source Elec.Limited
China

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IGBT Power Module MG50G2CL3 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... (Max) trr = 0.5µs (Max) z Low saturation voltage : VCE (sat) = 4.0V (Max) z Enhancement-mode z The electrodes are isolated from case Specifications: part no. MG50G2CL3 Manufacturer TOSHIBA supply ability .....

Mega Source Elec.Limited
China

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IGBT Power Module MG50G2CL4 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... (Max) trr = 0.5µs (Max) z Low saturation voltage : VCE (sat) = 4.0V (Max) z Enhancement-mode z The electrodes are isolated from case Specifications: part no. MG50G2CL4 Manufacturer TOSHIBA supply ability .....

Mega Source Elec.Limited
China

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IGBT Power Module MG50G2DM1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... (Max) trr = 0.5µs (Max) z Low saturation voltage : VCE (sat) = 4.0V (Max) z Enhancement-mode z The electrodes are isolated from case Specifications: part no. MG50G2DM1 Manufacturer TOSHIBA supply ability .....

Mega Source Elec.Limited
China

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IGBT Power Module MG50G6EL1 - TOSHIBA -TOSHIBA GTR Module Silicon N Channel IGBT

... (Max) trr = 0.5µs (Max) z Low saturation voltage : VCE (sat) = 4.0V (Max) z Enhancement-mode z The electrodes are isolated from case Specifications: part no. MG50G6EL1 Manufacturer TOSHIBA supply ability .....

Mega Source Elec.Limited
China

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IGBT Power Module MG50H1BS1 - TOSHIBA -TOSHIBA GTR Module Silicon N Channel IGBT

... (Max) trr = 0.5µs (Max) z Low saturation voltage : VCE (sat) = 4.0V (Max) z Enhancement-mode z The electrodes are isolated from case Specifications: part no. MG50H1BS1 Manufacturer TOSHIBA supply ability .....

Mega Source Elec.Limited
China

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IGBT Power Module MG50H1ZS1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... (Max) trr = 0.5µs (Max) z Low saturation voltage : VCE (sat) = 4.0V (Max) z Enhancement-mode z The electrodes are isolated from case Specifications: part no. MG50H1ZS1 Manufacturer TOSHIBA supply ability .....

Mega Source Elec.Limited
China

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IGBT Power Module MG50J1ZS40- TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... GTR Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]High input impedance [1]High speed : tf = 0.35µs (max) trr = 0.15µs (max) [1]Low ...

Mega Source Elec.Limited
China

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IGBT Power Module MG50J2YS1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... in one package. [1]Enhancement-mode. [1]High speed : tf = 0.30µs (Max.) (IC = 50A) trr = 0.15µs (Max.) (IF = 50A) [1]Low saturation voltage : VCE (sat)=2.70V (Max.) (IC=50A) Specifications: part no....

Mega Source Elec.Limited
China

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IGBT Power Module MG50J2YS9 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... in one package. [1]Enhancement-mode. [1]High speed : tf = 0.30µs (Max.) (IC = 50A) trr = 0.15µs (Max.) (IF = 50A) [1]Low saturation voltage : VCE (sat)=2.70V (Max.) (IC=50A) Specifications: part no....

Mega Source Elec.Limited
China

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IGBT Power Module MG50J2YS40- TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... in one package. [1]Enhancement-mode. [1]High speed : tf = 0.30µs (Max.) (IC = 50A) trr = 0.15µs (Max.) (IF = 50A) [1]Low saturation voltage : VCE (sat)=2.70V (Max.) (IC=50A) Specifications: part no....

Mega Source Elec.Limited
China

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IGBT Power Module MG50J2YS45 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... in one package. [1]Enhancement-mode. [1]High speed : tf = 0.30µs (Max.) (IC = 50A) trr = 0.15µs (Max.) (IF = 50A) [1]Low saturation voltage : VCE (sat)=2.70V (Max.) (IC=50A) Specifications: part no....

Mega Source Elec.Limited
China

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IGBT Power Module MG50J2YS50 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... in one package. [1]Enhancement-mode. [1]High speed : tf = 0.30µs (Max.) (IC = 50A) trr = 0.15µs (Max.) (IF = 50A) [1]Low saturation voltage : VCE (sat)=2.70V (Max.) (IC=50A) Specifications: part no....

Mega Source Elec.Limited
China

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IGBT Power Module MG50J2YS91 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... in one package. [1]Enhancement-mode. [1]High speed : tf = 0.30µs (Max.) (IC = 50A) trr = 0.15µs (Max.) (IF = 50A) [1]Low saturation voltage : VCE (sat)=2.70V (Max.) (IC=50A) Specifications: part no....

Mega Source Elec.Limited
China

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IGBT Power Module MG50J6ES50- TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... in one package. [1]Enhancement-mode [1]High speed : tf = 0.30µs (Max.) (IC = 400A) trr = 0.15µs (Max.) (IF = 400A) [1]Low saturation voltage : VCE (sat) = 2.70V (Max.) (IC=400A) Specifications: part no....

Mega Source Elec.Limited
China

Verified Supplier

Add to cart
IGBT Power Module MG50N2YS9- TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... (Max) trr = 0.5µs (Max) z Low saturation voltage : VCE (sat) = 4.0V (Max) z Enhancement-mode z The electrodes are isolated from case Specifications: part no. MG50N2YS9 Manufacturer TOSHIBA supply ability .....

Mega Source Elec.Limited
China

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IGBT Power Module MG50N2YS1 - TOSHIBA -TOSHIBA GTR Module Silicon N Channel IGBT

... (Max) trr = 0.5µs (Max) z Low saturation voltage : VCE (sat) = 4.0V (Max) z Enhancement-mode z The electrodes are isolated from case Specifications: part no. MG50N2YS1 Manufacturer TOSHIBA supply ability .....

Mega Source Elec.Limited
China

Verified Supplier

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IGBT Power Module MG50N6ES40 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... (Max) trr = 0.5µs (Max) z Low saturation voltage : VCE (sat) = 4.0V (Max) z Enhancement-mode z The electrodes are isolated from case Specifications: part no. MG50N6ES40 Manufacturer TOSHIBA supply ability ....

Mega Source Elec.Limited
China

Verified Supplier

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IGBT Power Module MG50Q2YS40 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...GTR Module Silicon N Channel IGBT Description: High Power Switching Applications. Motor Control Applications. Applications: [1] High input impedance [1] High speed: tf = 0.5µs (max.) trr = 0.5µs (max.) [1] L...

Mega Source Elec.Limited
China

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